Vishay Semiconductors SI73 TrenchFET®功率MOSFET
Vishay Semiconductors SI73 TrenchFET® 功率MOSFET采用新型低热阻PowerPAK® 封装，高度仅为1.07mm。TrenchFET® 功率MOSFET 100%经过Rg/UIS测试，不含卤素。这些SI73功率MOSFET非常适合用于直流/直流转换器。
特性
- 新型低热阻PowerPAK® 封装，高度仅为1.07mm
- 100%经过Rg/UIS测试
- 不含卤素
应用
- 直流/直流转换器
封装尺寸
View Results ( 11 ) Page
| 物料编号 | 数据表 | 封装 / 箱体 | 晶体管极性 | Vds-漏源极击穿电压 | Id-连续漏极电流 | Rds On-漏源导通电阻 | Vgs th-栅源极阈值电压 | Qg-栅极电荷 | Pd-功率耗散 | 正向跨导 - 最小值 | 下降时间 | 上升时间 | 典型关闭延迟时间 | 典型接通延迟时间 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SI7336ADP-T1-E3 |  |
PowerPAK-SO-8 | N-Channel | 30 V | 30 A | 3 mOhms | 1 V | 36 nC | 5.4 W | 110 S | 32 ns | 16 ns | 90 ns | 24 ns |
| SI7309DN-T1-GE3 | |
PowerPAK-1212-8 | P-Channel | 60 V | 8 A | 146 mOhms | 3 V | 14.5 nC | 19.8 W | 10 S | 35 ns | 15 ns | 30 ns | 25 ns |
| SI7386DP-T1-GE3 | |
PowerPAK-SO-8 | N-Channel | 30 V | 19 A | 7 mOhms | 2.5 V | 11.5 nC | 5 W | 50 S | 10 ns | 9 ns | 35 ns | 12 ns |
| SI7336ADP-T1-GE3 | |
PowerPAK-SO-8 | N-Channel | 30 V | 30 A | 3 mOhms | 1 V | 36 nC | 5.4 W | 110 S | 32 ns | 16 ns | 90 ns | 24 ns |
| SI7370DP-T1-GE3 | |
PowerPAK-SO-8 | N-Channel | 60 V | 9.6 A | 11 mOhms | 4 V | 57 nC | 5.2 W | 50 S | 30 ns | 12 ns | 16 ns | 50 ns |
| SI7370DP-T1-E3 | |
PowerPAK-SO-8 | N-Channel | 60 V | 9.6 A | 11 mOhms | 4 V | 57 nC | 5.2 W | 50 S | 30 ns | 12 ns | 16 ns | 50 ns |
| SI7309DN-T1-E3 | |
PowerPAK-1212-8 | P-Channel | 60 V | 8 A | 146 mOhms | 3 V | 14.5 nC | 19.8 W | 10 S | 35 ns | 15 ns | 30 ns | 25 ns |
| SI7386DP-T1-E3 | |
PowerPAK-SO-8 | N-Channel | 30 V | 19 A | 7 mOhms | 2.5 V | 11.5 nC | 5 W | 50 S | 10 ns | 9 ns | 35 ns | 12 ns |
| SI7315DN-T1-GE3 | |
PowerPAK-1212-8 | P-Channel | 150 V | 8.9 A | 315 mOhms | 4 V | 19.5 nC | 52 W | 10 S | 8 ns | 9 ns | 23 ns | 8 ns |
| SI7370ADP-T1-GE3 | |
PowerPAK-1212-8 | N-Channel | 60 V | 50 A | 57 mOhms | 4 V | 8.4 nC | 69.4 W | 12 S | 20 ns | 9 ns | 40 ns | 20 ns |
发布日期: 2024-01-08
| 更新日期: 2024-01-24