Nexperia PMVxx P 沟道沟槽式 MOSFET
恩智浦 P 沟道沟槽式 MOSFET 是采用小型 SOT23 (SMD) 塑料封装的增强模式场效应晶体管。它们采用沟槽式 MOSFET 技术，提供低阈值电压并可以非常快的速度开关。这些 MOSFET 适合运用于继电器驱动器、
高速线路驱动器、低侧负载开关及开关电路等应用中。
Features
- Low threshold voltage
- Very fast switching
- Trench MOSFET technology
- 2kV ESD protected
- Low on-state resistance
- Enhanced power dissipation capability of 1096mW
- Enhanced power dissipation capability: Ptot= 1000mW
应用
- Relay driver
- High-speed line driver
- High-side load switch
- Switching circuits
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