ROHM Semiconductor Automotive Ignition IGBTs
ROHM Semiconductor Automotive Ignition IGBTs with low collector-emitter saturation voltage are suitable for the ignition coil and solenoid driver circuits. The IGBT transistors feature high self-clamped inductive switching energy, built-in gate-emitter protection diode, and built-in gate-emitter resistance. These IGBT transistors operate at -40ºC to 175ºC and -55ºC to 175ºC storage temperature. The devices are housed in 3-pin TO-252 and TO263S packages and are a highly reliable product for automotive.
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Features
- Low collector-emitter saturation voltage
- High self-clamped inductive switching energy
- Built-in gate-emitter protection diode
- Built-in gate-emitter resistance
- -40ºC to 175ºC operating junction temperature
- -55ºC to 175ºC storage temperature
- Qualified to AEC-Q101
- Pb-free leading plating
- RoHS compliant
Applications
- Ignition coil driver circuits
- Solenoid driver circuits
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View Results ( 6 ) Page
| 物料编号 | 数据表 | 描述 | 安装风格 | 最小工作温度 | 最大工作温度 | 栅极—射极漏泄电流 |
|---|---|---|---|---|---|---|
| RGPR30BM40HRTL |  |
绝缘栅双极晶体管(IGBT) 400V 30A 1.6V Vce Ignition IGBT | SMD/SMT | - 40 C | + 175 C | 1.2 mA |
| RGPZ10BM40FHTL | |
绝缘栅双极晶体管(IGBT) 430V 20A 1.6V Vce Ignition IGBT | SMD/SMT | - 40 C | + 175 C | 15 uA |
| RGPR20NL43HRTL | |
绝缘栅双极晶体管(IGBT) Transistor, IGBT, 430V +/- 30V, 20A | SMD/SMT | - 40 C | + 175 C | 1.2 mA |
| RGPR10BM40FHTL | |
绝缘栅双极晶体管(IGBT) 430V 20A 1.6V Vce Ignition IGBT | SMD/SMT | - 40 C | + 175 C | 1.2 mA |
| RGPR20NS43HRTL | |
绝缘栅双极晶体管(IGBT) 430V 20A 1.6V Vce Ignition IGBT | SMD/SMT | - 40 C | + 175 C | 1.2 mA |
| RGPR30NS40HRTL | |
绝缘栅双极晶体管(IGBT) 400V 30A 1.6V Vce Ignition IGBT | Through Hole | - 40 C | + 175 C | 1.2 mA |
发布日期: 2018-01-03
| 更新日期: 2023-09-07