Texas Instruments FemtoFET 功率 MOSFET
德州仪器 FemtoFET 功率 MOSFET 具有超小占位面积（0402 外壳尺寸），并有超低电阻（与竞争产品相比低 70%）。这些 MOSFET 具有超低的 Qg, Qgd 规格，并有最优的 ESD 额定值。它们采用基板栅格阵列(LGA)封装。这种封装提高了硅含量，使其特别适合空间受限的应用。这些功率 MOSFET 具有低功耗和低开关损耗，提高了轻负载下的性能。这些器件的典型应用有手持设备、移动设备、负载开关、通用开关、电池应用等。
特性
- Ultra small footprint (0402 case size)
- 1.0mmx0.6mm
- Industry standard package footprint
- Low height profile - >0.35mm
- Ultra low resistance, 70% less than competitors
- Ultra low Qg & Qgd
- Land grid array (LGA) package maximizes silicon content
- Optimized ESD ratings
- Ideal for space-constrained applications such as cell phones and tablets
- Easy second sourcing
- Supports thin Z-height products
- Low power dissipation
- Low switching losses; Improved light load performance
- Supports Id currents > 2 amps, double the nearest competitor
- Robust manufacturing
应用
- Handheld and mobile
- Load switch
- General purpose switching
- Battery
发布日期: 2015-03-06
| 更新日期: 2022-03-11