The SQJ200 has a drain-source voltage of 20VDS while the SQJ202 has a drain source voltage of 12VDS. The gate source voltage for both is ±20
特性
- SQJ200: 20V VDS (V)
- SQJ202: 12V VDS (V)
- SQJ200: RDS(on) (Ω) at VGS = 10V N-Channel 1: 0.0088 N-Channel 2: 0.0037
- SQJ202: RDS(on) (Ω) at VGS = 10V N-Channel 1: 0.0065, 0.0033
- SQJ200: RDS(on) (Ω) at VGS = 4.5V N-Channel1: 0.0124, N-Channel 2: 0.0050
- SQJ202: RDS(on) (Ω) at VGS = 4.5V, N-Channel 1: 0.0093, N-Channel 2: 0.0045
- ID (A) 20, 60
- Configuration: Dual N
- TrenchFET® power MOSFET
- AEC-Q101 qualified
- 100% Rg and UIS tested
- Operating junction and storage temperature range of -55 to +175

