Vishay / Siliconix SiA429DJT 20V P通道MOSFET

Vishay Siliconix SiA429DJT 20V P通道TrenchFET®功率MOSFET在型面小于0.8mm的P通道器件中具有业界最低的导通电阻，所有2mmx2mmP通道器件均具有最低导通电阻。Vishay Siliconix SiA429DJT TrenchFET功率MOSFET采用热增强型Thin PowerPAK® SC-70封装，具有0.6mm的超薄型面。SiA429DJT是用于DC/DC转换器以及负载和充电器开关的理想产品。在1.8V时，SiA429DJT TrenchFET MOSFET的导通电阻比与其性能最接近的器件低12%，其中包括具有0.8mm标准型面的MOSFET。较低导通电阻转换为较低的导电损耗。

特性

  • TrenchFET® Power MOSFET
  • New Thermally Enhanced PowerPAK® SC-70 Package
    • Small Footprint Area
    • Ultra-Thin 0.6 mm height
  • 20V drain-source voltage
  • On-resistance:
    • 20.5mΩ at 4.5V
    • 27mΩ at 2.5V
    • 36mΩ at 1.8V
    • 60mΩ at 1.5V

应用

  • Load Switch and Charger Switch for Portable Devices
  • DC/DC Converter
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