Vishay / Siliconix Vishay Siliconix IRFPS43N50K功率MOSFET
与类似的n通道功率MOSFET相比，Vishay Siliconix IRFPS43N50K功率MOSFET具有栅极电荷Qg低的特点，并且栅极、雪崩和动态dV/dt耐用性均有提升。Vishay Siliconix IRFPS43N50K MOSFET可提供低导通阻抗RDS(on)，完全体现了电容和雪崩电压、电流特性。Vishay Siliconix IRFPS43N50K为开关模式电源、不间断电源以及高速电源切换应用进行过优化。
特性
- Low gate charge Qg results in simple drive requirement
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche voltage and current
- Low RDS(on)
- Compliant to RoHS directive 2002/95/EC
规范
- VDS(V): 500
- RDS(on) (Ω): VGS = 10V, 0.078
- Qg (Max.) (nC): 350
- Qgs (nC): 85
- Qgd (nC): 180
- Configuration: Single
