Vishay / Siliconix SiR870DP 100V功率MOSFET

Vishay Siliconix SiR870DP 100V N通道TrenchFET®功率MOSFET采用ThunderFET®技术，具有业界最低的导通电阻7.8mΩ（4.5V时）。Vishay Siliconix SiR870DP还具有业界最低的导通电阻6mΩ（10V时）。这些Vishay Siliconix ThunderFET装置在4.5V时还具有业界最低的优质因数(FOM)208 mΩ-nC。低导通电阻转换成较低的导电损耗并可降低节能环保解决方案中的功耗。SiR870DP 100V TrenchFET功率MOSFET设计用于较高的频率和开关应用。

These Vishay Siliconix ThunderFET devices also provide an industry-low 208 mΩ-nC figure of merit (FOM) at 4.5V. The low on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. SiR870DP 100V TrenchFET Power MOSFETs are designed for higher frequency and switching applications.

特性

  • Low on-resistance of 7.8mΩ at 4.5V is the industry's lowest
  • Very low on-resistance of 6mΩ at 10V
  • Lower conduction losses and reduced power consumption for energy saving green solutions
  • Idustry-low 208mΩ-nC FOM at 4.5V
  • Package: PowerPAK SO-8
  • VDS (V) 100
  • VGS (V) ± 20

应用

  • Fixed Telecom
  • DC/DC Converter
  • Primary and Secondary Side Switch