Wolfspeed / Cree X 波段氮化镓高电子迁移率晶体管和单片微波集成电路
Wolfspeed/Cree X 波段氮化镓高电子迁移率晶体管和单片微波集成电路具有宽带隙，与基于砷化镓的器件相比，击穿场强增加了五倍，功率密度增加了 10 到 20 倍。 对于相同的工作电源，Cree 氮化镓元件的尺寸更小、电容更低。 这意味着放大器可以在更宽的带宽范围内工作，同时具有良好的输入和输出匹配。 考虑到氮化镓高电子迁移率晶体管和单片微波集成电路的显著优势，X 波段功率放大器逐渐不再采用低效的 GaAs pHEMT 和不可靠的行波管。
The GaN HEMTs and MMICs wide-bandgap increase the breakdown field by five times and the power density by a factor of 10 to 20 compared with GaAs-based devices. Cree GaN components are smaller and have a lower capacitance for the same operating power. This means that amplifiers can operate over a wider bandwidth while exhibiting good input and output matching. X-band power amplifiers are moving away from inefficient GaAs pHEMTs and unreliable Traveling Wave Tubes due to the significant advantages of GaN HEMTs and MMICs. Typical applications include weather, defense and commercial based systems, air-traffic control, and fire-control.
特性
- 2-Way Private Radio
- Broadband Amplifiers
- Cellular Infrastructure
- Test Instrumentation
- Class A, AB, Linear Amplifiers Suitable for OFDM, W-CDMA, EDGE, CDMA Waveforms
- Satellite Communications
- PTP Communications Links
- Marine Radar
- Pleasure Craft Radar
- Port Vessel Traffic Services
- High-Efficiency Amplifiers
