Wolfspeed / Cree CGHV50200F GaN HEMT
Wolfspeed CGHV50200F 200W GaN（镓氮化）HEMT（高电子迁移率晶体管）非常适合用于卫星通信应用，如对流层散射通信和超视距 (BLOS)。 CGHV50200F GaN HEMT 匹配 50Ω，以便使用。 该器件设计用于连续波 (CW)、脉冲和线性模式功率放大器工作。 该器件采用陶瓷/金属法兰型 440217 封装。
Wolfspeed GaN (Gallium-Nitride) HEMT (High-Electron-Mobility Transistors) offer high efficiency, high gain, and wide bandwidth capabilities. These devices deliver a higher breakdown voltage, higher temperature operation, higher efficiency, higher thermal conductivity, higher power density, and wider bandwidths than conventional silicon (Si) and gallium arsenide (GaAs) devices.
Features
- 200W Peak power output
- Power gain: 13dB
- Frequency: 4.4GHz to 5.0GHz
- Drain efficiency: 65%
- Typical Power (PSAT): 180W
- Power Added Efficiency (PAE): 33%
- 50Ω Internally Matched
应用
- Troposcatter communications
- Beyond Line of Sight (BLOS)
- 4.4GHz to 5.0GHz C-Band SatCom applications
CGHV50200F-AMP Test Fixture offers an evaluation platform and reference design for the CGHV50200F GaN HEMT. The Test Fixture includes the CGHV50200F device.