ALD210800APCL

Name: Advanced Linear Devices ALD210800APCL
Brand: Advanced Linear Devices
SKU: 585-ALD210800APCL
Price: 53.27 RMB
Availability: OutOfStock

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请参阅产品规格

Mouser编号：

585-ALD210800APCL

制造商编号：

ALD210800APCL

制造商：

Advanced Linear Devices

说明：

MOSFET PREC N-CHAN EPAD CMOS MOSFET ARRAY

数据表:

ALD210800APCL 数据表 (PDF)

ECAD模型:

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产品属性	属性值	选择属性
制造商:	Advanced Linear Devices
产品种类:	MOSFET
RoHS:
技术:	Si
安装风格:	Through Hole
封装 / 箱体:	PDIP-16
晶体管极性:	N-Channel
通道数量:	4 Channel
Vds-漏源极击穿电压:	10.6 V
Id-连续漏极电流:	80 mA
Rds On-漏源导通电阻:	25 Ohms
Vgs - 栅极-源极电压:	- 12 V, 12 V
Vgs th-栅源极阈值电压:	20 mV
最小工作温度:	0 C
最大工作温度:	+ 70 C
Pd-功率耗散:	500 mW
通道模式:	Enhancement
封装:	Tube
商标:	Advanced Linear Devices
配置:	Quad
产品类型:	MOSFETs
系列:	ALD210800A
工厂包装数量:	50
子类别:	Transistors
晶体管类型:	4 N-Channel
典型关闭延迟时间:	10 ns
典型接通延迟时间:	10 ns
单位重量:	1.025 g

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已选择的属性: 0

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数据表

ALD210800APCL 数据表 (PDF)

合规代码

CNHTS:: 8541210000
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 8541210101
KRHTS:: 8541219000
TARIC:: 8542399000
MXHTS:: 8542399901
ECCN:: EAR99

原产地分类

原产国:: 美国
组装原产国/地区:: 不可用
扩散国家:: 不可用

发货时，国家/地区可能会发生变化。

Advanced Linear Devices ALD210800/ALD210800A Precision N-Channel EPAD® MOSFET Arrays - INACTIVE

Advanced Linear Devices ALD210800/ALD210800A Precision N-Channel EPAD® MOSFET Arrays are precision matched at the factory using ALD's proven EPAD® CMOS technology. These quad monolithic devices are enhanced additions to the ALD110800A/ALD110800 EPAD® MOSFET Family, with increased forward transconductance and output conductance, particularly at very low supply voltages. Intended for low voltage, low power small signal applications, the ALD210800/ALD210800A features Zero-Threshold™ voltage, which enables circuit designs with input/output signals referenced to GND at enhanced operating voltage ranges. With these devices, a circuit with multiple cascading stages can be built to operate at extremely low supply/bias voltage levels.
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