HV-D3 mSiC® Power Modules

Microchip Technology HV-D3 mSiC® Power Modules simplify and accelerate the adoption of solid-state transformers (SSTs) in AI hyperscale data centers and other high-voltage power applications. These high-efficiency power modules integrate 3.3kV silicon carbide (SiC) mSiC MOSFETs and Schottky diodes in an industry-standard 62mm package. This design construction enables efficient power delivery from medium-voltage grids directly to server racks. The HV-D3 modules deliver low switching losses, strong thermal performance, and high power density for demanding applications. Typical applications for Microchip Technology HV-D3 mSiC Power Modules include power transmission and distribution, industrial power, data centers, marine and aerospace, Electric Vehicle (EV) infrastructure, and renewable energy systems.

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数量 RoHS ECAD模型 技术
安装风格
封装 / 箱体
晶体管极性
通道数量
Vds-漏源极击穿电压
Id-连续漏极电流
Rds On-漏源导通电阻
Vgs - 栅极-源极电压
Vgs th-栅源极阈值电压
最小工作温度
最大工作温度
Pd-功率耗散
Microchip Technology MOSFET模块 PM-MOSFET-SIC-SBD-D3
数据表
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SiC Screw Mount HV-D3 N-Channel 2 Channel 3.3 kV 295 A 7.8 mOhms 23 V 2.7 V - 40 C + 175 C 1.918 kW
Microchip Technology MOSFET模块 PM-MOSFET-SIC-D3
数据表
更多信息可用

SiC Screw Mount HV-D3 N-Channel 2 Channel 3.3 kV 295 A 7.8 mOhms 23 V 2.7 V - 40 C + 175 C 1.918 kW
Microchip Technology MOSFET模块 PM-MOSFET-SIC-D3
数据表
更多信息可用

SiC Screw Mount HV-D3 N-Channel 2 Channel 3.3 kV 151 A 15.5 mOhms 23 V 2.7 V - 40 C + 175 C 1.013 kW
Microchip Technology MOSFET模块 PM-MOSFET-SIC-SBD-D3
数据表
更多信息可用

SiC Screw Mount HV-D3 N-Channel 2 Channel 3.3 kV 295 A 7.8 mOhms 23 V 2.7 V - 40 C + 175 C 1.918 kW
Microchip Technology MOSFET模块 PM-MOSFET-SIC-D3
数据表

SiC Screw Mount HV-D3 N-Channel 2 Channel 3.3 kV 295 A 7.8 mOhms 23 V 2.7 V - 40 C + 175 C 1.918 kW
Microchip Technology MOSFET模块 PM-MOSFET-SIC-SBD-D3
数据表

SiC Screw Mount HV-D3 N-Channel 2 Channel 3.3 kV 151 A 15.5 mOhms 23 V 2.7 V - 40 C + 175 C 1.013 kW