M系列高可靠性厚膜电阻器

Vishay/Thin Film M系列高可靠性厚膜电阻器是一款表面贴装 片式电阻,具有与军用级电阻器相同的高可靠性和稳定性。M系列采用环绕式端子,带有薄膜粘合层和耐渗镍阻挡层,可在+150°C 的工作条件下工作。这些Vishay电阻器采用钌基金属陶瓷后膜材料,性能可靠。这些片式电阻器具有广泛的尺寸、值和性能特征范围。M系列产品100%经过电气测试,符合容差和热冲击要求,通常满足MIL-PRF-55342 A组的性能要求。

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选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 封装 系列 电阻 功率额定值 容差 温度系数 最小工作温度 最大工作温度 电压额定值 外壳代码 - in 外壳代码 - mm 长度 宽度 高度 应用 特点
Vishay 厚膜电阻器 - SMD M-1206 100PPM 8.45K 1% B T5
M 8.45 kOhms 330 mW (1/3 W) 1 % 100 PPM / C - 65 C + 155 C 100 V 1206 3216 3.2 mm (0.126 in) 1.6 mm (0.063 in) 0.838 mm (0.033 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-1206 100PPM 910K 5% B TS
M 910 kOhms 330 mW (1/3 W) 5 % 100 PPM / C - 65 C + 155 C 100 V 1206 3216 3.2 mm (0.126 in) 1.6 mm (0.063 in) 0.838 mm (0.033 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-1206 300PPM 10M 1% S T1 e3
M 10 MOhms 330 mW (1/3 W) 1 % 300 PPM / C - 65 C + 155 C 100 V 1206 3216 3.2 mm (0.126 in) 1.6 mm (0.063 in) 0.838 mm (0.033 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-1206 300PPM 4.7M 5% B T0
M 4.7 MOhms 330 mW (1/3 W) 5 % 300 PPM / C - 65 C + 155 C 100 V 1206 3216 3.2 mm (0.126 in) 1.6 mm (0.063 in) 0.838 mm (0.033 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-1206 JUMPER NO TRIM B TS
M 0 Ohms 330 mW (1/3 W) - 65 C + 155 C 100 V 1206 3216 3.2 mm (0.126 in) 1.6 mm (0.063 in) 0.838 mm (0.033 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-1206 JUMPER NO TRIM S T0 E3
M
Vishay 厚膜电阻器 - SMD M-1505 JUMPER NO TRIM S BS e3
M 0 Ohms 350 mW - 65 C + 155 C 125 V 1505 3812 3.937 mm (0.155 in) 1.27 mm (0.05 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-2010 100PPM 100 1% S T1 e3
M 100 Ohms 1 W 1 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-2010 100PPM 100 1% S TS e3
M 100 Ohms 1 W 1 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-2010 100PPM 100 5% B TS
M 100 Ohms 1 W 5 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-2010 100PPM 1K 5% B TS
M 1 kOhms 1 W 5 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-2010 100PPM 10K 1% S TS e3
M 10 kOhms 1 W 1 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-2010 100PPM 10K 5% B T1
M 10 kOhms 1 W 5 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-2010 100PPM 10K 5% S T1 e3
M 10 kOhms 1 W 5 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-2010 100PPM 10K 5% S TS e3
M 10 kOhms 1 W 5 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-2010 100PPM 10 1% B T1
M 10 Ohms 1 W 1 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-2010 100PPM 1.1K 5% S T0 e3
M 1.1 kOhms 1 W 5 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-2010 100PPM 1.1K 5% S T1 e3
M 1.1 kOhms 1 W 5 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-2010 100PPM 120 5% B TS
M 120 Ohms 1 W 5 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-2010 100PPM 12 5% S TS e3
M 12 Ohms 1 W 5 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-2010 100PPM 12.1 1% B T0
M 12.1 Ohms 1 W 1 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-2010 100PPM 130 1% B T1
M 130 Ohms 1 W 1 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-2010 100PPM 140 1% B T0
M 140 Ohms 1 W 1 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-2010 100PPM 150 5% S T0 e3
M 150 Ohms 1 W 5 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-2010 100PPM 1.5K 1% S T1 e3
M 1.5 kOhms 1 W 1 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination