M系列高可靠性厚膜电阻器

Vishay/Thin Film M系列高可靠性厚膜电阻器是一款表面贴装 片式电阻,具有与军用级电阻器相同的高可靠性和稳定性。M系列采用环绕式端子,带有薄膜粘合层和耐渗镍阻挡层,可在+150°C 的工作条件下工作。这些Vishay电阻器采用钌基金属陶瓷后膜材料,性能可靠。这些片式电阻器具有广泛的尺寸、值和性能特征范围。M系列产品100%经过电气测试,符合容差和热冲击要求,通常满足MIL-PRF-55342 A组的性能要求。

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选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 封装 系列 电阻 功率额定值 容差 温度系数 最小工作温度 最大工作温度 电压额定值 外壳代码 - in 外壳代码 - mm 长度 宽度 高度 应用 特点
Vishay 厚膜电阻器 - SMD M-2010 100PPM 15 5% B TS
M 15 Ohms 1 W 5 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-2010 100PPM 17.8K 1% B TS
M 17.8 kOhms 1 W 1 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-2010 100PPM 1.8K 5% S TS e3
M 1.8 kOhms 1 W 5 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-2010 100PPM 18 1% S TF e3
M 18 Ohms 1 W 1 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-2010 100PPM 200 5% B TS
M 200 Ohms 1 W 5 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-2010 100PPM 2K 1% B TS
M 2 kOhms 1 W 1 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-2010 100PPM 20 5% B TS
M 20 Ohms 1 W 5 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-2010 100PPM 2.21K 1% S T5 e3
M 2.21 kOhms 1 W 1 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-2010 100PPM 22 5% B T1
M 22 Ohms 1 W 5 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-2010 100PPM 22 5% S T1 e3
M 22 Ohms 1 W 5 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-2010 100PPM 249K 1% B T5
M 249 kOhms 1 W 1 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-2010 100PPM 330 5% B T0
M 330 Ohms 1 W 5 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-2010 100PPM 430 5% S TS e3
M 430 Ohms 1 W 5 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-2010 100PPM 470 5% B WS
M 470 Ohms 1 W 5 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-2010 100PPM 47 5% B TS
M 47 Ohms 1 W 5 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-2010 100PPM 49.9 1% S T0 e3
M 49.9 Ohms 1 W 1 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-2010 100PPM 50 1% B WS
M 50 Ohms 1 W 1 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-2010 100PPM 50 1% S T1 e3
M 50 Ohms 1 W 1 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-2010 100PPM 560 1% S T1 e3
M 560 Ohms 1 W 1 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-2010 100PPM 560 5% S TS e3
M 560 Ohms 1 W 5 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-2010 100PPM 619 1% S TS e3
M 619 Ohms 1 W 1 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-2010 100PPM 750 5% B T1
M 750 Ohms 1 W 5 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-2010 100PPM 750 5% B WS
M 750 Ohms 1 W 5 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-2010 100PPM 750 5% S T1 e3
M 750 Ohms 1 W 5 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination
Vishay 厚膜电阻器 - SMD M-2010 100PPM 750 5% S TS e3
M 750 Ohms 1 W 5 % 100 PPM / C - 65 C + 155 C 200 V 2010 5025 5.004 mm (0.197 in) 2.489 mm (0.098 in) 0.381 mm (0.015 in) High Reliability Wrap-Around Termination