|
|
碳化硅MOSFET SIC_DISCRETE
- AIMW120R045M1XKSA1
- Infineon Technologies
-
1:
¥184.6194
-
724库存量
-
NRND
|
Mouser 零件编号
726-AIMW120R045M1XKS
NRND
|
Infineon Technologies
|
碳化硅MOSFET SIC_DISCRETE
|
|
724库存量
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
1.2 kV
|
52 A
|
59 mOhms
|
- 7 V, + 20 V
|
5.7 V
|
57 nC
|
- 55 C
|
+ 175 C
|
228 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMW65R027M1HXKSA1
- Infineon Technologies
-
1:
¥120.7631
-
1,751库存量
-
NRND
|
Mouser 零件编号
726-IMW65R027M1HXKSA
NRND
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
1,751库存量
|
|
|
¥120.7631
|
|
|
¥72.7042
|
|
|
¥71.8002
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
650 V
|
47 A
|
34 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
62 nC
|
- 55 C
|
+ 150 C
|
189 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMZA65R048M1HXKSA1
- Infineon Technologies
-
1:
¥92.8069
-
313库存量
-
NRND
|
Mouser 零件编号
726-IMZA65R048M1HXKS
NRND
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
313库存量
|
|
|
¥92.8069
|
|
|
¥59.1442
|
|
|
¥50.8726
|
|
|
¥45.7424
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
650 V
|
39 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
33 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
- IMBF170R1K0M1XTMA1
- Infineon Technologies
-
1:
¥44.1717
-
399库存量
-
25,000在途量
|
Mouser 零件编号
726-IMBF170R1K0M1XTM
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
|
|
399库存量
25,000在途量
|
|
|
¥44.1717
|
|
|
¥22.9955
|
|
|
¥20.9276
|
|
|
¥18.532
|
|
|
¥17.289
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.7 kV
|
5.2 A
|
1 Ohms
|
- 10 V, + 20 V
|
4.5 V
|
5 nC
|
- 55 C
|
+ 175 C
|
68 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R140M1HXKSA1
- Infineon Technologies
-
1:
¥60.794
-
142库存量
-
240预期 2026/11/5
-
NRND
|
Mouser 零件编号
726-IMW120R140M1HXKS
NRND
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
142库存量
240预期 2026/11/5
|
|
|
¥60.794
|
|
|
¥35.3238
|
|
|
¥32.4197
|
|
|
¥30.3518
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-3
|
1 Channel
|
1.2 kV
|
19 A
|
182 mOhms
|
- 7 V, + 23 V
|
3.5 V
|
13 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R030M1HXKSA1
- Infineon Technologies
-
1:
¥149.7137
-
2,160在途量
-
NRND
|
Mouser 零件编号
726-IMZ120R030M1HXKS
NRND
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
2,160在途量
|
|
|
¥149.7137
|
|
|
¥114.0622
|
|
|
¥95.0443
|
|
|
¥84.6144
|
|
|
¥80.1509
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
1.2 kV
|
56 A
|
40 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
63 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMZA65R072M1HXKSA1
- Infineon Technologies
-
1:
¥73.3709
-
无库存交货期 8 周
-
NRND
|
Mouser 零件编号
726-IMZA65R072M1HXKS
NRND
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
无库存交货期 8 周
|
|
|
¥73.3709
|
|
|
¥42.601
|
|
|
¥36.5555
|
|
|
¥35.1543
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-4
|
1 Channel
|
650 V
|
28 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
CoolSiC
|
|
