|
|
碳化硅MOSFET SIC_DISCRETE
- AIMW120R045M1XKSA1
- Infineon Technologies
-
1:
¥188.4275
-
736库存量
-
NRND
|
Mouser 零件编号
726-AIMW120R045M1XKS
NRND
|
Infineon Technologies
|
碳化硅MOSFET SIC_DISCRETE
|
|
736库存量
|
|
|
¥188.4275
|
|
|
¥152.1093
|
|
|
¥137.4758
|
|
|
¥129.1251
|
|
|
报价
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
52 A
|
59 mOhms
|
- 7 V, + 20 V
|
5.7 V
|
57 nC
|
- 55 C
|
+ 175 C
|
228 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMW65R027M1HXKSA1
- Infineon Technologies
-
1:
¥134.1649
-
1,224库存量
-
NRND
|
Mouser 零件编号
726-IMW65R027M1HXKSA
NRND
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
1,224库存量
|
|
|
¥134.1649
|
|
|
¥102.2424
|
|
|
¥85.202
|
|
|
¥75.8456
|
|
|
¥71.8002
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
47 A
|
34 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
62 nC
|
- 55 C
|
+ 150 C
|
189 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R140M1HXKSA1
- Infineon Technologies
-
1:
¥67.4158
-
305库存量
-
NRND
|
Mouser 零件编号
726-IMW120R140M1HXKS
NRND
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
305库存量
|
|
|
¥67.4158
|
|
|
¥44.0022
|
|
|
¥36.1487
|
|
|
¥31.6852
|
|
|
¥29.945
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
19 A
|
182 mOhms
|
- 7 V, + 23 V
|
3.5 V
|
13 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMZA65R048M1HXKSA1
- Infineon Technologies
-
1:
¥92.0611
-
83库存量
-
240预期 2027/1/28
-
NRND
|
Mouser 零件编号
726-IMZA65R048M1HXKS
NRND
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
83库存量
240预期 2027/1/28
|
|
|
¥92.0611
|
|
|
¥65.0993
|
|
|
¥54.2626
|
|
|
¥48.2284
|
|
|
¥45.7424
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
39 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
33 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
- IMBF170R1K0M1XTMA1
- Infineon Technologies
-
1:
¥49.9573
-
10,930在途量
|
Mouser 零件编号
726-IMBF170R1K0M1XTM
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
|
|
10,930在途量
在途量:
6,930 预期 2026/7/28
4,000 预期 2026/9/9
|
|
|
¥49.9573
|
|
|
¥32.7587
|
|
|
¥24.069
|
|
|
¥21.4248
|
|
|
¥19.0292
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.7 kV
|
5.2 A
|
1 Ohms
|
- 10 V, + 20 V
|
4.5 V
|
5 nC
|
- 55 C
|
+ 175 C
|
68 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R030M1HXKSA1
- Infineon Technologies
-
1:
¥152.3579
-
2,160在途量
-
NRND
|
Mouser 零件编号
726-IMZ120R030M1HXKS
NRND
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
2,160在途量
|
|
|
¥152.3579
|
|
|
¥100.7508
|
|
|
¥87.0213
|
|
|
¥84.6144
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
40 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
63 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
|
|
碳化硅MOSFET SILICON CARBIDE MOSFET
- IMZA65R072M1HXKSA1
- Infineon Technologies
-
1:
¥78.4107
-
无库存交货期 52 周
-
NRND
|
Mouser 零件编号
726-IMZA65R072M1HXKS
NRND
|
Infineon Technologies
|
碳化硅MOSFET SILICON CARBIDE MOSFET
|
|
无库存交货期 52 周
|
|
|
¥78.4107
|
|
|
¥55.1666
|
|
|
¥44.6689
|
|
|
¥39.7082
|
|
最低： 1
倍数： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
28 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
CoolSiC
|
|
