600V CoolMOS P7功率晶体管

Infineon 600V CoolMOS P7功率晶体管是第7代器件,采用高压功率MOSFET的革命性技术。该款晶体管按照超级结 (SJ) 原理进行设计,由Infineon Technologies首创。600V CoolMOS P7将快速开关SJ MOSFET的优势与出色的易用性相结合。600V P7具有极低的振铃倾向、针对硬换向的优异的体二极管耐受性,以及出色的ESD能力。极低的开关损耗和导通损耗使开关应用变得更高效、更紧凑、散热性能更佳。
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选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 商标名 封装
Infineon Technologies MOSFET HIGH POWER_NEW 8库存量
240预期 2027/5/13
¥73.9472
¥51.7766
¥39.0415
¥35.482
最低: 1
倍数: 1
Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 48 A 49 mOhms 20 V 3 V 67 nC - 55 C + 150 C 164 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 240库存量
¥55.0875
¥28.5325
¥26.1369
¥23.4927
最低: 1
倍数: 1
Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 31 A 77 mOhms 20 V 3 V 45 nC - 55 C + 150 C 117 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW
6,000在途量
¥55.257
¥29.3687
¥26.8036
¥23.5718
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 48 A 49 mOhms 20 V 3 V 67 nC - 55 C + 150 C 29 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET CONSUMER
4,672预期 2026/11/6
剪切带
¥15.8765
¥7.5484
¥6.5992
¥5.2319
卷轴
¥4.1019
最低: 1
倍数: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 12 A 214 mOhms 20 V 3 V 18 nC - 40 C + 150 C 53 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET LOW POWER_NEW
10,118预期 2026/12/24
剪切带
¥17.7862
¥8.5993
¥7.6388
¥6.0681
¥5.8195
卷轴
¥4.6782
最低: 1
倍数: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 9 A 305 mOhms 20 V 3 V 13 nC - 55 C + 150 C 41 W Enhancement CoolMOS Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET HIGH POWER_NEW
2,818在途量
¥70.1391
¥41.1094
¥36.2278
¥33.2559
¥32.2615
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 48 A 49 mOhms 20 V 3 V 67 nC - 55 C + 150 C 164 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW
998预期 2026/12/10
¥29.5269
¥15.142
¥13.4018
¥11.0062
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 20 A 160 mOhms 20 V 3.5 V 31 nC - 55 C + 150 C 81 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_NEW
1,000预期 2026/12/3
¥20.1818
¥10.2604
¥9.1869
¥7.2885
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 9 A 305 mOhms 20 V 3 V 13 nC - 55 C + 150 C 41 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 无库存交货期 52 周
¥67.7435
¥35.821
¥32.9169
¥28.8715
最低: 1
倍数: 1
Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 37 A 69 mOhms 20 V 3 V 51 nC - 55 C + 150 C 129 W Enhancement CoolMOS Tube