|
|
MOSFET HIGH POWER_NEW
- IPZA60R060P7XKSA1
- Infineon Technologies
-
1:
¥73.9472
-
8库存量
-
240预期 2027/5/13
|
Mouser 零件编号
726-IPZA60R060P7XKSA
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
8库存量
240预期 2027/5/13
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
600 V
|
48 A
|
49 mOhms
|
20 V
|
3 V
|
67 nC
|
- 55 C
|
+ 150 C
|
164 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPZA60R099P7XKSA1
- Infineon Technologies
-
1:
¥55.0875
-
240库存量
|
Mouser 零件编号
726-IPZA60R099P7XKSA
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
240库存量
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
600 V
|
31 A
|
77 mOhms
|
20 V
|
3 V
|
45 nC
|
- 55 C
|
+ 150 C
|
117 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPA60R060P7XKSA1
- Infineon Technologies
-
1:
¥55.257
-
6,000在途量
|
Mouser 零件编号
726-IPA60R060P7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
6,000在途量
在途量:
500 预期 2026/10/26
3,500 预期 2026/11/19
2,000 预期 2027/2/18
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
48 A
|
49 mOhms
|
20 V
|
3 V
|
67 nC
|
- 55 C
|
+ 150 C
|
29 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET CONSUMER
- IPD60R280P7SAUMA1
- Infineon Technologies
-
1:
¥15.8765
-
4,672预期 2026/11/6
|
Mouser 零件编号
726-IPD60R280P7SAUMA
|
Infineon Technologies
|
MOSFET CONSUMER
|
|
4,672预期 2026/11/6
|
|
最低: 1
倍数: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
12 A
|
214 mOhms
|
20 V
|
3 V
|
18 nC
|
- 40 C
|
+ 150 C
|
53 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET LOW POWER_NEW
- IPD60R360P7ATMA1
- Infineon Technologies
-
1:
¥17.7862
-
10,118预期 2026/12/24
|
Mouser 零件编号
726-IPD60R360P7ATMA1
|
Infineon Technologies
|
MOSFET LOW POWER_NEW
|
|
10,118预期 2026/12/24
|
|
最低: 1
倍数: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
9 A
|
305 mOhms
|
20 V
|
3 V
|
13 nC
|
- 55 C
|
+ 150 C
|
41 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFET HIGH POWER_NEW
- IPW60R060P7XKSA1
- Infineon Technologies
-
1:
¥70.1391
-
2,818在途量
|
Mouser 零件编号
726-IPW60R060P7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
2,818在途量
在途量:
178 预期 2027/2/25
2,640 预期 2027/4/15
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
48 A
|
49 mOhms
|
20 V
|
3 V
|
67 nC
|
- 55 C
|
+ 150 C
|
164 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPP60R160P7XKSA1
- Infineon Technologies
-
1:
¥29.5269
-
998预期 2026/12/10
|
Mouser 零件编号
726-IPP60R160P7XKSA1
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
998预期 2026/12/10
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
20 A
|
160 mOhms
|
20 V
|
3.5 V
|
31 nC
|
- 55 C
|
+ 150 C
|
81 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET LOW POWER_NEW
- IPP60R360P7XKSA1
- Infineon Technologies
-
1:
¥20.1818
-
1,000预期 2026/12/3
|
Mouser 零件编号
726-IPP60R360P7XKSA1
|
Infineon Technologies
|
MOSFET LOW POWER_NEW
|
|
1,000预期 2026/12/3
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
9 A
|
305 mOhms
|
20 V
|
3 V
|
13 nC
|
- 55 C
|
+ 150 C
|
41 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFET HIGH POWER_NEW
- IPZA60R080P7XKSA1
- Infineon Technologies
-
1:
¥67.7435
-
无库存交货期 52 周
|
Mouser 零件编号
726-IPZA60R080P7XKSA
|
Infineon Technologies
|
MOSFET HIGH POWER_NEW
|
|
无库存交货期 52 周
|
|
最低: 1
倍数: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
600 V
|
37 A
|
69 mOhms
|
20 V
|
3 V
|
51 nC
|
- 55 C
|
+ 150 C
|
129 W
|
Enhancement
|
CoolMOS
|
Tube
|
|