|
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R008M2HXTMA1
- Infineon Technologies
-
1:
¥301.1676
-
764库存量
-
2,000在途量
|
Mouser 零件编号
726-IMBG120R008M2HXT
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
764库存量
2,000在途量
在途量:
1,000 预期 2026/9/17
1,000 预期 2026/10/15
|
|
|
¥301.1676
|
|
|
¥223.9999
|
|
|
¥223.9095
|
|
|
¥212.1688
|
|
|
¥212.1688
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
189 A
|
7.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
195 nC
|
- 55 C
|
+ 175 C
|
800 W
|
Enhancement
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R017M2HXTMA1
- Infineon Technologies
-
1:
¥160.6295
-
3,038库存量
|
Mouser 零件编号
726-IMBG120R017M2HXT
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
3,038库存量
|
|
|
¥160.6295
|
|
|
¥101.0785
|
|
|
¥100.3327
|
|
|
¥94.4567
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
107 A
|
17.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
470 W
|
Enhancement
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R022M2HXTMA1
- Infineon Technologies
-
1:
¥135.0802
-
349库存量
|
Mouser 零件编号
726-IMBG120R022M2HXT
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
349库存量
|
|
|
¥135.0802
|
|
|
¥80.8967
|
|
|
¥80.8176
|
|
|
¥76.5123
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
87 A
|
21.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R026M2HXTMA1
- Infineon Technologies
-
1:
¥115.8024
-
1,641库存量
|
Mouser 零件编号
726-IMBG120R026M2HXT
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1,641库存量
|
|
|
¥115.8024
|
|
|
¥66.2519
|
|
|
¥61.7884
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
75 A
|
25.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
60 nC
|
- 55 C
|
+ 175 C
|
335 W
|
Enhancement
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R053M2HXTMA1
- Infineon Technologies
-
1:
¥75.3597
-
757库存量
|
Mouser 零件编号
726-IMBG120R053M2HXT
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
757库存量
|
|
|
¥75.3597
|
|
|
¥41.1885
|
|
|
¥37.8889
|
|
|
¥35.1543
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
41 A
|
52.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
205 W
|
Enhancement
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R116M2HXTMA1
- Infineon Technologies
-
1:
¥56.50
-
11库存量
|
Mouser 零件编号
726-IMBG120R116M2HXT
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
11库存量
|
|
|
¥56.50
|
|
|
¥30.0241
|
|
|
¥27.5494
|
|
|
¥25.7301
|
|
|
¥24.3176
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
21.2 A
|
115.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
14.4 nC
|
- 55 C
|
+ 175 C
|
123 W
|
Enhancement
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R181M2HXTMA1
- Infineon Technologies
-
1:
¥48.2284
-
991库存量
-
1,000预期 2027/4/1
|
Mouser 零件编号
726-IMBG120R181M2HXT
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
991库存量
1,000预期 2027/4/1
|
|
|
¥48.2284
|
|
|
¥25.312
|
|
|
¥23.0746
|
|
|
¥20.8485
|
|
|
¥19.6846
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
14.9 A
|
181.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
9.7 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R234M2HXTMA1
- Infineon Technologies
-
1:
¥43.5954
-
5,094库存量
|
Mouser 零件编号
726-IMBG120R234M2HXT
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
5,094库存量
|
|
|
¥43.5954
|
|
|
¥22.6678
|
|
|
¥20.5999
|
|
|
¥18.193
|
|
|
¥18.1139
|
|
最低： 1
倍数： 1
最大： 1,000
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
8.1 A
|
233.9 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
7.9 nC
|
- 55 C
|
+ 175 C
|
80 W
|
Enhancement
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R012M2HXTMA1
- Infineon Technologies
-
1:
¥219.7737
-
50库存量
-
2,000在途量
|
Mouser 零件编号
726-IMBG120R012M2HXT
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
50库存量
2,000在途量
在途量:
1,000 预期 2026/9/28
1,000 预期 2027/2/18
|
|
|
¥219.7737
|
|
|
¥164.6071
|
|
|
¥151.2844
|
|
|
¥146.7418
|
|
|
¥137.5549
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
144 A
|
12.2 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
600 W
|
Enhancement
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R040M2HXTMA1
- Infineon Technologies
-
1:
¥93.3832
-
210库存量
-
1,000预期 2026/11/5
|
Mouser 零件编号
726-IMBG120R040M2HXT
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
210库存量
1,000预期 2026/11/5
|
|
|
¥93.3832
|
|
|
¥53.3473
|
|
|
¥47.9798
|
|
|
¥45.4147
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
52 A
|
39.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
8.1 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R078M2HXTMA1
- Infineon Technologies
-
1:
¥69.6419
-
41库存量
-
2,000预期 2027/7/15
|
Mouser 零件编号
726-IMBG120R078M2HXT
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
41库存量
2,000预期 2027/7/15
|
|
|
¥69.6419
|
|
|
¥42.4315
|
|
|
¥36.0696
|
|
|
¥33.2559
|
|
|
¥29.6964
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
29 A
|
78.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
20.6 nC
|
- 55 C
|
+ 175 C
|
158 W
|
Enhancement
|
|
