|
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R008M2HXTMA1
- Infineon Technologies
-
1:
¥319.6092
-
1,590库存量
-
1,000在途量
|
Mouser 零件编号
726-IMBG120R008M2HXT
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1,590库存量
1,000在途量
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
189 A
|
7.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
195 nC
|
- 55 C
|
+ 175 C
|
800 W
|
Enhancement
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R012M2HXTMA1
- Infineon Technologies
-
1:
¥229.7855
-
2,011库存量
|
Mouser 零件编号
726-IMBG120R012M2HXT
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
2,011库存量
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
144 A
|
12.2 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
600 W
|
Enhancement
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R022M2HXTMA1
- Infineon Technologies
-
1:
¥147.3181
-
245库存量
|
Mouser 零件编号
726-IMBG120R022M2HXT
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
245库存量
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
87 A
|
21.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R026M2HXTMA1
- Infineon Technologies
-
1:
¥111.9152
-
1,603库存量
|
Mouser 零件编号
726-IMBG120R026M2HXT
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1,603库存量
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
75 A
|
25.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
60 nC
|
- 55 C
|
+ 175 C
|
335 W
|
Enhancement
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R053M2HXTMA1
- Infineon Technologies
-
1:
¥77.5858
-
502库存量
-
1,000预期 2027/5/6
|
Mouser 零件编号
726-IMBG120R053M2HXT
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
502库存量
1,000预期 2027/5/6
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
41 A
|
52.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
205 W
|
Enhancement
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R234M2HXTMA1
- Infineon Technologies
-
1:
¥43.5954
-
3,615库存量
|
Mouser 零件编号
726-IMBG120R234M2HXT
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
3,615库存量
|
|
最低: 1
倍数: 1
最大: 1,000
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
8.1 A
|
233.9 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
7.9 nC
|
- 55 C
|
+ 175 C
|
80 W
|
Enhancement
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R040M2HXTMA1
- Infineon Technologies
-
1:
¥94.3776
-
79库存量
-
1,000预期 2026/12/31
|
Mouser 零件编号
726-IMBG120R040M2HXT
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
79库存量
1,000预期 2026/12/31
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
52 A
|
39.6 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
8.1 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R078M2HXTMA1
- Infineon Technologies
-
1:
¥67.913
-
39库存量
-
2,000预期 2027/7/8
|
Mouser 零件编号
726-IMBG120R078M2HXT
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
39库存量
2,000预期 2027/7/8
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
29 A
|
78.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
20.6 nC
|
- 55 C
|
+ 175 C
|
158 W
|
Enhancement
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R181M2HXTMA1
- Infineon Technologies
-
1:
¥53.4377
-
198库存量
-
4,000在途量
|
Mouser 零件编号
726-IMBG120R181M2HXT
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
198库存量
4,000在途量
在途量:
2,000 预期 2027/5/13
2,000 预期 2027/8/12
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
14.9 A
|
181.4 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
9.7 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R017M2HXTMA1
- Infineon Technologies
-
1:
¥168.0762
-
1,999预期 2026/11/19
|
Mouser 零件编号
726-IMBG120R017M2HXT
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
1,999预期 2026/11/19
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
107 A
|
17.1 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
470 W
|
Enhancement
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
- IMBG120R116M2HXTMA1
- Infineon Technologies
-
1:
¥59.0538
-
2,000预期 2026/12/3
|
Mouser 零件编号
726-IMBG120R116M2HXT
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
|
|
2,000预期 2026/12/3
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
1 Channel
|
1.2 kV
|
21.2 A
|
115.7 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
14.4 nC
|
- 55 C
|
+ 175 C
|
123 W
|
Enhancement
|
|