SCT3x第三代SiC沟槽MOSFET

ROHM SCT3x第三代SiC沟槽MOSFET采用专属的沟槽式栅极结构,与平面型SiC MOSFET相比,其导通电阻降低了50%,输入电容降低了35%。这就大大降低了开关损耗并加快了开关速度,提高了效率,同时降低了各种设备的功率损耗。这些MOSFET提供650V和1200V两个版本。  

结果: 31
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 安装风格 封装 / 箱体 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 资格
ROHM Semiconductor 碳化硅MOSFET N-Ch 1200V SiC 31A 80mOhm TrenchMOS 1,034库存量
¥197.8517
¥124.8198
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 1.2 kV 31 A 104 mOhms - 4 V, + 22 V 5.6 V 60 nC - 55 C + 175 C 165 W Enhancement
ROHM Semiconductor 碳化硅MOSFET 1200V 72A 339W SIC 30mOhm TO-247N
345库存量
¥610.6972
¥549.9823
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 1.2 kV 72 A 39 mOhms - 4 V, + 22 V 5.6 V 131 nC - 55 C + 175 C 339 W Enhancement AEC-Q101
ROHM Semiconductor 碳化硅MOSFET 650V 118A 427W SIC 17mOhm TO-247N
351库存量
¥1,045.2839
¥966.7037
最低: 1
倍数: 1
Through Hole TO-247N-3 1 Channel 650 V 118 A 22.1 mOhms - 4 V, + 22 V 5.6 V 172 nC - 55 C + 175 C 427 W Enhancement AEC-Q101
ROHM Semiconductor 碳化硅MOSFET 1200V 95A 427W SIC 22mOhm TO-247N
199库存量
¥1,080.2687
¥1,022.9438
最低: 1
倍数: 1
Through Hole TO-247N-3 1 Channel 1.2 kV 95 A 28.6 mOhms - 4 V, + 22 V 5.6 V 178 nC - 55 C + 175 C 427 W Enhancement AEC-Q101
ROHM Semiconductor 碳化硅MOSFET 1200V 24A 134W SIC 105mOhm TO-247N
1,619库存量
¥177.2631
¥129.5319
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 1.2 kV 24 A 137 mOhms - 4 V, + 22 V 5.6 V 51 nC + 175 C 134 W Enhancement AEC-Q101
ROHM Semiconductor 碳化硅MOSFET 650V 70A 262W SIC 30mOhm TO-247N
366库存量
¥409.5233
¥340.0509
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 650 V 70 A 39 mOhms - 4 V, + 22 V 5.6 V 104 nC - 55 C + 175 C 262 W Enhancement AEC-Q101
ROHM Semiconductor 碳化硅MOSFET N-Ch 1200V SiC 72A 30mOhm TrenchMOS 683库存量
¥668.847
¥578.5148
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 1.2 kV 72 A 39 mOhms - 4 V, + 22 V 5.6 V 131 nC - 55 C + 175 C 339 W Enhancement
ROHM Semiconductor 碳化硅MOSFET 1200V 55A 262W SIC 40mOhm TO-247N
460库存量
¥433.7618
¥367.4195
¥359.3174
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 1.2 kV 55 A 52 mOhms - 4 V, + 22 V 5.6 V 107 nC - 55 C + 175 C 262 W Enhancement AEC-Q101
ROHM Semiconductor 碳化硅MOSFET 650V 21A 103W SIC 120mOhm TO-247N
450库存量
¥79.0774
¥53.0987
¥49.5505
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 650 V 21 A 156 mOhms - 4 V, + 22 V 5.6 V 38 nC + 175 C 103 W Enhancement AEC-Q101
ROHM Semiconductor 碳化硅MOSFET 650V 30A 134W SIC 80mOhm TO-247N
366库存量
¥157.3299
¥117.4522
¥114.5594
最低: 1
倍数: 1
Through Hole TO-247N-3 1 Channel 650 V 30 A 104 mOhms - 4 V, + 22 V 5.6 V 48 nC + 175 C 134 W Enhancement AEC-Q101
ROHM Semiconductor 碳化硅MOSFET 1200V 31A 165W SIC 80mOhm TO-247N
171库存量
¥216.3046
¥157.7367
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 1.2 kV 31 A 80 mOhms - 4 V, + 22 V 2.7 V 60 nC - 55 C + 175 C 165 W Enhancement AEC-Q101
ROHM Semiconductor 碳化硅MOSFET 650V 39A 165W SIC 60mOhm TO-247N
428库存量
¥209.8523
¥149.7137
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 650 V 39 A 78 mOhms - 4 V, + 22 V 5.6 V 58 nC + 175 C 165 W Enhancement AEC-Q101
ROHM Semiconductor 碳化硅MOSFET Nch 1200V 24A SiC TO-247N 169库存量
¥168.9915
¥135.6565
¥124.6503
¥122.0852
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 1.2 kV 24 A 137 mOhms - 4 V, + 22 V 5.6 V 51 nC + 175 C 134 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TO247 650V 39A N-CH SIC 704库存量
¥220.7681
¥143.51
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 650 V 39 A 60 mOhms - 4 V, + 22 V 5.6 V 58 nC - 55 C + 175 C 165 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TO247 1.2KV 55A N-CH SIC 61库存量
¥445.1748
¥344.424
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 1.2 kV 55 A 40 mOhms - 4 V, + 22 V 5.6 V 107 nC - 55 C + 175 C 262 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TO247 1.2KV 31A N-CH SIC 150库存量
¥157.3299
¥93.1346
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 1.2 kV 31 A 80 mOhms - 4 V, + 22 V 5.6 V 60 nC - 55 C + 175 C 165 W Enhancement
ROHM Semiconductor 碳化硅MOSFET 650V Nch SiC Trench MOSFET in 4pin Package - SCT3080AR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver 529库存量
¥178.992
¥141.6907
¥122.5824
¥115.9719
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 650 V 30 A 80 mOhms - 4 V, + 22 V 5.6 V 48 nC - 55 C + 175 C 134 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TO247 650V 70A N-CH SIC 195库存量
¥425.6597
¥325.9824
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 650 V 70 A 30 mOhms - 4 V, + 22 V 5.6 V 104 nC - 55 C + 175 C 262 W Enhancement
ROHM Semiconductor 碳化硅MOSFET 1200V Nch SiC Trench MOSFET in 4pin Package - SCT3105KR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver 87库存量
¥154.1772
¥118.2884
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 1.2 kV 24 A 105 mOhms - 4 V, + 22 V 5.6 V 51 nC - 55 C + 175 C 134 W Enhancement
ROHM Semiconductor 碳化硅MOSFET Transistor SiC MOSFET 1200V 160mO 3rd Gen TO-263-7LA 990库存量
剪切带
¥81.8007
¥45.0757
¥42.0247
卷轴
¥39.7082
最低: 1
倍数: 1
: 1,000
SMD/SMT TO-263-7LA 1 Channel 1.2 kV 17 A 208 mOhms - 4 V, + 22 V 5.6 V 42 nC + 175 C 100 W Enhancement
ROHM Semiconductor 碳化硅MOSFET 1200V, 17A, 7-pin SMD, Trench-structure, (SiC) MOSFET 753库存量
剪切带
¥79.9814
¥44.0022
¥40.7817
卷轴
¥38.5443
最低: 1
倍数: 1
: 1,000
SMD/SMT TO-263-7LA 1 Channel 1.2 kV 17 A 208 mOhms - 4 V, + 22 V 5.6 V 42 nC + 175 C 100 W Enhancement
ROHM Semiconductor 碳化硅MOSFET Nch 1200V 95A SiC TO-247N 450库存量
¥463.7859
¥367.9167
¥362.2102
最低: 1
倍数: 1
Through Hole TO-247N-3 1 Channel 1.2 kV 95 A 28.6 mOhms - 4 V, + 22 V 5.6 V 178 nC - 55 C + 175 C 427 W Enhancement
ROHM Semiconductor 碳化硅MOSFET N-Ch 650V SiC 93A 22mOhm TrenchMOS 198库存量
¥464.7012
¥350.3904
¥337.983
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 650 V 93 A 28.6 mOhms - 4 V, + 22 V 5.6 V 133 nC - 55 C + 175 C 339 W Enhancement
ROHM Semiconductor 碳化硅MOSFET N-Ch 650V SiC 70A 30mOhm TrenchMOS 87库存量
¥276.5223
¥188.1789
¥184.1222
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 650 V 70 A 39 mOhms - 4 V, + 22 V 5.6 V 104 nC - 55 C + 175 C 262 W Enhancement
ROHM Semiconductor 碳化硅MOSFET N-Ch 650V SiC 39A 60mOhm TrenchMOS 180库存量
900在途量
¥135.8147
¥77.179
¥77.0886
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 650 V 39 A 78 mOhms - 4 V, + 22 V 5.6 V 58 nC + 175 C 165 W Enhancement