DTMOSIV Series MOSFETs

Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the RDS(on) makes it possible to house lower RDS(on) chips in the same packages. This helps to improve efficiency and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators.

结果: 113
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 商标名 封装
Toshiba MOSFET MOSFET NChannel 068ohm DTMOS 23库存量
50预期 2026/12/18
¥73.1223
¥47.8103
¥36.5555
¥34.239
最低: 1
倍数: 1
Si Through Hole TO-220FP-3 N-Channel 1 Channel 650 V 35 A 68 mOhms 30 V 3.5 V 100 nC - 55 C + 150 C 50 W Enhancement DTMOSIV Tube

Toshiba MOSFET MOSFET NChtrr130ns 0.08ohm DTMOS 9库存量
¥79.0774
¥55.0875
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 35 A 80 mOhms 30 V 4.5 V 115 nC - 55 C + 150 C 270 W Enhancement DTMOSIV Tube
Toshiba MOSFET N-Ch DTMOSIV 600 V 50W 4100pF 38.8A 61库存量
¥79.8232
¥43.9231
¥40.3636
¥38.4652
最低: 1
倍数: 1
Si Through Hole TO-220FP-3 N-Channel 1 Channel 600 V 38.8 A 55 mOhms 30 V 3.7 V 110 nC - 55 C + 150 C 50 W Enhancement DTMOSIV Tube
Toshiba MOSFET N-Ch 38.8A 270W FET 600V 4100pF 135nC 58库存量
¥109.5196
¥67.4949
¥67.4158
¥64.1049
¥58.9747
最低: 1
倍数: 1
Si Through Hole TO-3PN-3 N-Channel 1 Channel 600 V 38.8 A 55 mOhms 30 V 3.7 V 110 nC - 55 C + 150 C 270 W Enhancement DTMOSIV Tube

Toshiba MOSFET N-Ch Power MOSFET Transistor 56库存量
¥117.294
¥82.8855
¥72.7946
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 49.2 A 55 mOhms 30 V 2.5 V 160 nC + 150 C 400 W Enhancement Tube
Toshiba MOSFET N-Ch 61.8A 400W FET 600V 3500pF 180nC 25库存量
¥154.923
¥106.785
¥88.9988
最低: 1
倍数: 1
Si Through Hole TO-3PN-3 N-Channel 1 Channel 600 V 61.8 A 33 mOhms 30 V 3.7 V 180 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube

Toshiba MOSFET DTMOSIV 600V 45mOhm 61.8A 400W 6500pF 72库存量
¥99.4287
¥85.202
¥74.4444
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 61.8 A 36 mOhms 30 V 3 V 205 nC - 55 C + 150 C 400 W Enhancement DTMOSIV Tube

Toshiba MOSFET DTMOSIV 600V 40mOhm 61.8A 400W 6500pF 8库存量
¥119.2715
¥90.8181
¥75.597
¥67.4158
¥63.8563
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 61.8 A 33 mOhms 30 V 3.7 V 180 nC - 55 C + 150 C 400 W Enhancement DTMOSIV Tube
Toshiba MOSFET N-Ch 6.2A 30W FET 600V 390pF 12nC 118库存量
¥22.4192
¥14.3962
¥9.8423
¥7.6614
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 6.2 A 680 mOhms 30 V 3.7 V 12 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFET DTMOSIV 600V 820mOhm 6.2A 60W 390pF 12nC 197库存量
¥28.3743
¥13.4018
¥12.0797
¥10.2604
最低: 1
倍数: 1
Si Through Hole TO-251-3 N-Channel 1 Channel 600 V 6.2 A 680 mOhms 30 V 3.7 V 12 nC - 55 C + 150 C 60 W DTMOSIV Tube
Toshiba MOSFET Power MOSFET N-Channel 46库存量
¥22.4192
¥11.0062
¥9.5146
¥7.9213
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 7 A 540 mOhms 30 V 3 V 16 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFET N-Ch 7A 30W FET 600V 490pF 15nC 199库存量
¥23.0746
¥12.0797
¥11.0853
¥7.9778
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 7 A 600 mOhms 30 V 2.7 V 15 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFET Power MOSFET N-Channel 59库存量
¥22.7469
¥11.1644
¥9.7632
¥8.0456
¥6.9947
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 6.8 A 640 mOhms 30 V 2.5 V 15 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFET X33 Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=35W F=1MHZ 510库存量
¥30.1032
¥15.142
¥15.0516
¥13.3227
¥11.0853
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6.5 A 950 mOhms 20 V 3 V 13 nC - 55 C + 150 C 35 W Enhancement DTMOSIV Tube
Toshiba MOSFET N-Ch 7A 60W FET 600V 490pF 15nC 687库存量
剪切带
¥17.6958
¥8.5993
¥7.6388
¥7.2998
卷轴
¥7.2998
最低: 1
倍数: 1
: 2,000
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 7 A 500 mOhms 30 V 3.7 V 15 nC - 55 C + 150 C 60 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET N-Ch DTMOSIV 600 V 60W 490pF 15nC 7A 144库存量
¥29.6964
¥14.0572
¥13.8086
¥10.509
¥10.17
最低: 1
倍数: 1
Si Through Hole TO-251-3 N-Channel 1 Channel 600 V 7 A 500 mOhms 30 V 3.7 V 15 nC - 55 C + 150 C 60 W Enhancement DTMOSIV Tube
Toshiba MOSFET DTMOSIV 600V 190mOhm 15.8A 130W 1350pF
999预期 2027/3/15
剪切带
¥38.2166
¥19.8541
¥17.9444
¥15.2211
卷轴
¥14.3058
¥13.4809
最低: 1
倍数: 1
: 1,000
Si Through Hole TO-262-3 N-Channel 1 Channel 600 V 15.8 A 190 mOhms 30 V 3.7 V 38 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC
231预期 2026/10/23
¥23.5718
¥12.0797
¥10.17
¥8.5993
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 9.7 A 380 mOhms 30 V 3.7 V 20 nC - 55 C + 150 C 100 W Enhancement DTMOSIV Tube
Toshiba MOSFET N-Ch 600V 15.8A 40W DTMOSIV 1350pF 38nC
348在途量
¥34.6571
¥17.6958
¥17.1195
¥12.9046
¥12.5769
最低: 1
倍数: 1
Si N-Channel 1 Channel DTMOSIV Tube

Toshiba MOSFET DTMOSIV 600V 65mOhm 38.8A 270W 4100pF
120预期 2027/2/15
¥71.5516
¥50.3754
¥40.6913
¥36.2278
¥32.092
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 38.8 A 55 mOhms 30 V 3.7 V 110 nC - 55 C + 150 C 270 W Enhancement DTMOSIV Tube

Toshiba MOSFET TO247(OS) PD=400W 1MHz PWR MOSFET TRNS
29预期 2026/10/26
¥102.3215
¥74.0263
¥61.6189
¥54.918
¥52.0252
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 49.2 A 57 mOhms 30 V 4.5 V 185 nC - 55 C + 150 C 400 W Enhancement DTMOSIV Tube
Toshiba MOSFET Power MOSFET N-Channel
1,987预期 2026/11/16
剪切带
¥17.5376
¥11.2548
¥7.5484
¥7.0964
卷轴
¥7.0964
最低: 1
倍数: 1
: 2,000
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 6.8 A 660 mOhms 30 V 2.5 V 15 nC - 55 C + 150 C 60 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET TO-220SIS PD=30W 1MHz PWR MOSFET TRNS 无库存交货期 24 周
¥26.3064
¥13.2323
¥11.0853
¥9.0965
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 9.7 A 380 mOhms 30 V 2.7 V 20 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFET N-Ch DTMOSIV 600 V 80W 700pF 20nC 9.7A 无库存交货期 16 周
¥38.6234
¥18.7806
¥17.0404
¥14.7239
¥14.5544
最低: 1
倍数: 1
Si Through Hole TO-251-3 N-Channel 1 Channel 600 V 9.7 A 327 mOhms 30 V 3.7 V 20 nC - 55 C + 150 C 80 W Enhancement DTMOSIV Tube
Toshiba MOSFET N-Ch DTMOSIV 600 V 88.3W 700pF 9.7A 无库存交货期 16 周
卷轴
¥8.3507
¥8.1021
最低: 2,500
倍数: 2,500
: 2,500
Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 600 V 9.7 A 380 mOhms 30 V 2.7 V 20 nC - 55 C + 150 C 88.3 W Enhancement DTMOSIV Reel