TK2R9E10PL,S1X

Name: Toshiba TK2R9E10PL,S1X
Brand: Toshiba
SKU: 757-TK2R9E10PLS1X
Price: 34.18 RMB
Availability: InStock

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Mouser编号：

757-TK2R9E10PLS1X

制造商编号：

TK2R9E10PL,S1X

制造商：

Toshiba

说明：

MOSFET Power MOSFET ID=240A VDSS=100V

数据表:

TK2R9E10PL,S1X 数据表 (PDF)

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产品属性	属性值	选择属性
制造商:	Toshiba
产品种类:	MOSFET
RoHS:
技术:	Si
安装风格:	Through Hole
封装 / 箱体:	TO-220-3
晶体管极性:	N-Channel
通道数量:	1 Channel
Vds-漏源极击穿电压:	100 V
Id-连续漏极电流:	240 A
Rds On-漏源导通电阻:	2.4 mOhms
Vgs - 栅极-源极电压:	- 20 V, 20 V
Vgs th-栅源极阈值电压:	1.5 V
Qg-栅极电荷:	161 nC
最小工作温度:	- 55 C
最大工作温度:	+ 175 C
Pd-功率耗散:	306 W
通道模式:	Enhancement
商标名:	U-MOSIX-H
封装:	Tube
商标:	Toshiba
配置:	Single
下降时间:	46 ns
产品类型:	MOSFETs
上升时间:	22 ns
系列:	TK2R9E10PL
工厂包装数量:	50
子类别:	Transistors
单位重量:	2 g

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数据表

TK2R9E10PL,S1X 数据表 (PDF)

Application Notes

Models

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Test/Quality Data

Reliability Tests Report

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合规代码

CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

原产地分类

原产国:: 中国
组装原产国/地区:: 不可用
扩散国家:: 不可用

发货时，国家/地区可能会发生变化。

U-MOSIX-H MOSFETs

Toshiba U-MOSIX-H Low Voltage N-Channel Enhancement Mode MOSFETs are high-efficiency MOSFETs that are specifically designed for use in the secondary side of AC-DC power supplies. This includes notebook PC adapters, game consoles, servers, desktop PCs, and flat-panel displays. It also includes DC-DC power supplies for communication equipment, servers, and data centers. The MOSFETs feature high-speed switching, small gate charge, and low drain-source on-resistance. These MOSFETs are fabricated with the Gen-8 and Gen-9 trench MOS processes. Toshiba U-MOSIX-H Low Voltage MOSFETs will help improve the efficiency of power supplies.

TK2R9E10PL Silicon N-channel MOSFET

Toshiba TK2R9E10PL Silicon N-channel MOSFET is a high-speed switching device with a small gate charge of 48nC. The device features a small output charge of 164nC. Toshiba TK2R9E10PL also has a low drain-source on-resistance R_DS(ON) of 2.4mΩ and low leakage current.