结果: 40
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 商标名 封装

Infineon Technologies MOSFET HIGH POWER_NEW 12,646库存量
¥88.7502
¥45.7424
¥43.6745
最低: 1
倍数: 1
最大: 4,000
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 76 A 30 mOhms 20 V 3 V 121 nC - 55 C + 150 C 255 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER_NEW 3,398库存量
¥58.3984
¥30.4422
¥27.8771
¥25.3911
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 37 A 69 mOhms 20 V 3 V 51 nC - 55 C + 150 C 129 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 3,631库存量
剪切带
¥27.2104
¥13.56
¥12.2379
¥9.9214
¥9.7632
卷轴
¥9.0174
最低: 1
倍数: 1
: 3,000
Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 19 A 149 mOhms 20 V 3 V 25 nC - 40 C + 150 C 81 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 1,122库存量
剪切带
¥44.1717
¥23.3232
¥20.5999
¥18.532
卷轴
¥16.3737
最低: 1
倍数: 1
: 1,000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 31 A 77 mOhms 20 V 3 V 45 nC - 55 C + 150 C 117 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 3,413库存量
剪切带
¥66.7491
¥36.2278
¥33.2559
¥32.3406
¥30.5213
卷轴
¥30.5213
最低: 1
倍数: 1
: 3,000
Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 41 A 53 mOhms 20 V 3 V 67 nC - 40 C + 150 C 201 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 195库存量
¥81.3148
¥43.844
¥40.4427
¥39.4596
最低: 1
倍数: 1
Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 61 A 45 mOhms 20 V 3.5 V 90 nC - 55 C + 150 C 201 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 4,688库存量
剪切带
¥69.2351
¥46.3187
¥31.7643
¥31.3462
卷轴
¥30.7699
最低: 1
倍数: 1
: 1,000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 120 V 61 A 45 mOhms 20 V 1.7 V 90 nC - 55 C + 150 C 201 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 23,822库存量
¥47.9798
¥25.1425
¥22.9164
¥19.5264
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 37 A 69 mOhms 20 V 3 V 51 nC - 55 C + 150 C 129 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER_NEW 32,180库存量
43,200预期 2026/12/17
¥34.3294
¥16.9613
¥15.4697
¥12.8255
¥12.7351
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 18 A 145 mOhms 20 V 3 V 25 nC - 55 C + 150 C 72 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 782库存量
剪切带
¥50.4545
¥26.4646
¥24.1481
¥21.6734
卷轴
¥19.3569
最低: 1
倍数: 1
: 1,000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 37 A 69 mOhms 20 V 3 V 51 nC - 55 C + 150 C 129 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 7,250库存量
剪切带
¥27.6285
¥13.8086
¥12.4865
¥10.0909
卷轴
¥9.266
¥9.1869
最低: 1
倍数: 1
: 1,000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 18 A 145 mOhms 20 V 3 V 25 nC - 55 C + 150 C 72 W Enhancement CoolMOS Reel, Cut Tape

Infineon Technologies MOSFET HIGH POWER_NEW 1,004库存量
¥118.1189
¥66.1728
¥63.6868
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 101 A 24 mOhms 20 V 3.5 V 164 nC - 55 C + 150 C 291 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER_NEW 1,028库存量
¥79.1565
¥49.9573
¥38.3748
¥37.0527
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 61 A 45 mOhms 20 V 3.5 V 90 nC - 55 C + 150 C 201 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 3,698库存量
2,000预期 2027/1/28
¥55.257
¥29.3687
¥26.8036
¥23.5718
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 48 A 49 mOhms 20 V 3 V 67 nC - 55 C + 150 C 29 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 1,716库存量
¥47.9798
¥25.1425
¥22.9164
¥19.5264
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 37 A 69 mOhms 20 V 3 V 51 nC - 55 C + 150 C 29 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 794库存量
¥42.5106
¥22.0802
¥20.1027
¥16.5432
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 31 A 77 mOhms 20 V 3 V 45 nC - 55 C + 150 C 29 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 1,562库存量
¥36.6459
¥18.7806
¥17.0404
¥13.899
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 26 A 100 mOhms 20 V 3 V 36 nC - 55 C + 150 C 28 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 1,612库存量
1,500预期 2026/12/10
¥27.459
¥13.7295
¥12.4074
¥10.4186
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 18 A 145 mOhms 20 V 3 V 25 nC - 55 C + 150 C 26 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 587库存量
2,000预期 2026/12/10
剪切带
¥54.3417
¥30.7699
¥27.9562
¥25.6397
卷轴
¥23.3232
最低: 1
倍数: 1
: 1,000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 48 A 49 mOhms 20 V 3 V 67 nC - 55 C + 150 C 164 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 974库存量
剪切带
¥36.6459
¥18.7806
¥16.9613
¥14.3962
卷轴
¥13.56
最低: 1
倍数: 1
: 1,000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 26 A 100 mOhms 20 V 3 V 36 nC - 55 C + 150 C 95 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 13,124库存量
剪切带
¥23.3232
¥11.8311
¥10.6672
¥8.5993
卷轴
¥7.5936
最低: 1
倍数: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 18 A 180 mOhms 20 V 3 V 25 nC - 55 C + 150 C 72 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 2,742库存量
剪切带
¥54.7598
¥28.8715
¥26.3855
¥24.1481
¥22.5774
卷轴
¥21.5943
最低: 1
倍数: 1
: 3,000
Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 39 A 73 mOhms 20 V 3 V 51 nC - 40 C + 150 C 154 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 6,191库存量
剪切带
¥43.9231
¥23.0746
¥21.0067
¥18.6111
卷轴
¥17.5376
最低: 1
倍数: 1
: 3,000
Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 33 A 85 mOhms 20 V 3 V 45 nC - 40 C + 150 C 137 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 3,192库存量
3,000预期 2027/2/11
¥55.257
¥29.3687
¥26.8036
¥26.3064
¥23.5718
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 48 A 49 mOhms 20 V 3 V 67 nC - 55 C + 150 C 164 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 3,566库存量
¥44.9175
¥23.3232
¥21.1762
¥17.4585
¥16.6223
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 31 A 77 mOhms 20 V 3 V 45 nC - 55 C + 150 C 117 W Enhancement CoolMOS Tube