结果: 40
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 商标名 封装
Infineon Technologies MOSFET HIGH POWER_NEW 5,244库存量
最低: 1
倍数: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 26 A 100 mOhms 20 V 3 V 36 nC - 55 C + 150 C 95 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 3,453库存量
最低: 1
倍数: 1
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 41 A 53 mOhms 20 V 3 V 67 nC - 40 C + 150 C 201 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 220库存量
最低: 1
倍数: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 61 A 45 mOhms 20 V 3.5 V 90 nC - 55 C + 150 C 201 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 4,712库存量
最低: 1
倍数: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 120 V 61 A 45 mOhms 20 V 1.7 V 90 nC - 55 C + 150 C 201 W Enhancement CoolMOS Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET HIGH POWER_NEW 12,682库存量
最低: 1
倍数: 1
最大: 4,000

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 76 A 30 mOhms 20 V 3 V 121 nC - 55 C + 150 C 255 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 2,993库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 48 A 49 mOhms 20 V 3 V 67 nC - 55 C + 150 C 29 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 1,726库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 37 A 69 mOhms 20 V 3 V 51 nC - 55 C + 150 C 29 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 824库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 31 A 77 mOhms 20 V 3 V 45 nC - 55 C + 150 C 29 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 1,872库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 26 A 100 mOhms 20 V 3 V 36 nC - 55 C + 150 C 28 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 1,140库存量
1,000预期 2026/12/17
最低: 1
倍数: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 48 A 49 mOhms 20 V 3 V 67 nC - 55 C + 150 C 164 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 1,162库存量
最低: 1
倍数: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 31 A 77 mOhms 20 V 3 V 45 nC - 55 C + 150 C 117 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 7,565库存量
最低: 1
倍数: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 18 A 145 mOhms 20 V 3 V 25 nC - 55 C + 150 C 72 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET CONSUMER 7,189库存量
7,500预期 2027/2/4
最低: 1
倍数: 1
最大: 2,500
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 18 A 180 mOhms 20 V 3 V 25 nC - 40 C + 150 C 72 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 3,092库存量
最低: 1
倍数: 1
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 39 A 73 mOhms 20 V 3 V 51 nC - 40 C + 150 C 154 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 4,191库存量
3,000预期 2026/10/12
最低: 1
倍数: 1
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 33 A 85 mOhms 20 V 3 V 45 nC - 40 C + 150 C 137 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 7,561库存量
3,000预期 2026/11/19
最低: 1
倍数: 1
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 27 A 104 mOhms 20 V 3 V 36 nC - 40 C + 150 C 111 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 3,667库存量
最低: 1
倍数: 1
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 19 A 149 mOhms 20 V 3 V 25 nC - 40 C + 150 C 81 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 1,316库存量
5,000预期 2027/4/8
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 48 A 49 mOhms 20 V 3 V 67 nC - 55 C + 150 C 164 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER_NEW 1,009库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 101 A 24 mOhms 20 V 3.5 V 164 nC - 55 C + 150 C 291 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER_NEW 1,028库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 61 A 45 mOhms 20 V 3.5 V 90 nC - 55 C + 150 C 201 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER_NEW 3,510库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 37 A 69 mOhms 20 V 3 V 51 nC - 55 C + 150 C 129 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER_NEW 8,497库存量
23,760预期 2026/11/12
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 18 A 145 mOhms 20 V 3 V 25 nC - 55 C + 150 C 72 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 253库存量
最低: 1
倍数: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 76 A 30 mOhms 20 V 3 V 121 nC - 55 C + 150 C 255 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER_NEW 633库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 31 A 77 mOhms 20 V 3 V 45 nC - 55 C + 150 C 117 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET CONSUMER 778库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 18 A 340 mOhms 20 V 3.5 V 25 nC - 40 C + 150 C 26 W Enhancement CoolMOS Tube