|
|
碳化硅MOSFET CoolSiC 1200 V, 14 mohm SiC Trench MOSFET in TO247-3 package
- IMW120R014M1HXKSA1
- Infineon Technologies
-
1:
¥245.1648
-
1,212库存量
-
NRND
|
Mouser 零件编号
726-IMW120R014M1HXKS
NRND
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC 1200 V, 14 mohm SiC Trench MOSFET in TO247-3 package
|
|
1,212库存量
|
|
最低： 1
倍数： 1
|
|
SiC MOSFETS
|
|
Through Hole
|
|
N-Channel
|
|
|
|
碳化硅MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
- IMBG120R045M1HXTMA1
- Infineon Technologies
-
1:
¥111.9152
-
617库存量
-
NRND
|
Mouser 零件编号
726-IMBG120R045M1HXT
NRND
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
|
|
617库存量
|
|
|
¥111.9152
|
|
|
¥68.1616
|
|
|
¥67.2463
|
|
|
¥63.1896
|
|
|
¥53.5959
|
|
最低： 1
倍数： 1
:
1,000
|
|
SiC MOSFETS
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
|
|
|
碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R140M1HXKSA1
- Infineon Technologies
-
1:
¥54.1835
-
368库存量
-
NRND
|
Mouser 零件编号
726-IMZ120R140M1HXKS
NRND
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
368库存量
|
|
|
¥54.1835
|
|
|
¥40.9399
|
|
|
¥35.1543
|
|
|
¥33.0864
|
|
最低： 1
倍数： 1
|
|
SiC MOSFETS
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2
- IMZC120R034M2HXKSA1
- Infineon Technologies
-
1:
¥103.7227
-
616库存量
-
240在途量
-
新产品
|
Mouser 零件编号
726-IMZC120R034M2HXK
新产品
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2
|
|
616库存量
240在途量
|
|
|
¥103.7227
|
|
|
¥57.3249
|
|
|
¥54.2626
|
|
最低： 1
倍数： 1
|
|
SiC MOSFETS
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
|
|
|
碳化硅MOSFET CoolSiC 1200 V, 7 mohm SiC Trench MOSFET in TO247-3 package
- IMW120R007M1HXKSA1
- Infineon Technologies
-
1:
¥420.4504
-
721库存量
-
NRND
|
Mouser 零件编号
726-IMW120R007M1HXKS
NRND
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC 1200 V, 7 mohm SiC Trench MOSFET in TO247-3 package
|
|
721库存量
|
|
最低： 1
倍数： 1
|
|
SiC MOSFETS
|
|
Through Hole
|
|
N-Channel
|
|
|
|
碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R220M1HXKSA1
- Infineon Technologies
-
1:
¥53.8445
-
4,390库存量
-
NRND
|
Mouser 零件编号
726-IMW120R220M1HXKS
NRND
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
4,390库存量
|
|
|
¥53.8445
|
|
|
¥30.6908
|
|
|
¥28.1257
|
|
|
¥26.555
|
|
|
¥25.6397
|
|
最低： 1
倍数： 1
|
|
SiC MOSFETS
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
|
|
|
碳化硅MOSFET CoolSiC 1200 V, 7 mohm SiC Trench MOSFET in TO247-4 package
- IMZA120R007M1HXKSA1
- Infineon Technologies
-
1:
¥423.4223
-
519库存量
-
480预期 2027/8/20
-
NRND
|
Mouser 零件编号
726-IMZA120R007M1HXK
NRND
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC 1200 V, 7 mohm SiC Trench MOSFET in TO247-4 package
|
|
519库存量
480预期 2027/8/20
|
|
最低： 1
倍数： 1
最大： 240
|
|
SiC MOSFETS
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
|
|
|
MOSFET CoolSiC 1200 V, 30 mohm SiC Trench MOSFET in TO-247-4 package
- IMZA120R030M1HXKSA1
- Infineon Technologies
-
1:
¥145.0807
-
603库存量
-
NRND
|
Mouser 零件编号
726-IMZA120R030M1HXK
NRND
|
Infineon Technologies
|
MOSFET CoolSiC 1200 V, 30 mohm SiC Trench MOSFET in TO-247-4 package
|
|
603库存量
|
|
最低： 1
倍数： 1
|
|
MOSFETs
|
Si
|
|
|
|
|
|
|
碳化硅MOSFET CoolSiC 1200 V, 20 mohm SiC Trench MOSFET in TO247-3 package
- IMW120R020M1HXKSA1
- Infineon Technologies
-
1:
¥198.5975
-
333库存量
-
NRND
|
Mouser 零件编号
726-IMW120R020M1HXKS
NRND
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC 1200 V, 20 mohm SiC Trench MOSFET in TO247-3 package
|
|
333库存量
|
|
|
¥198.5975
|
|
|
¥116.7968
|
|
|
¥116.4691
|
|
最低： 1
倍数： 1
|
|
SiC MOSFETS
|
|
Through Hole
|
|
N-Channel
|
|
|
|
碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R090M1HXKSA1
- Infineon Technologies
-
1:
¥78.3316
-
375库存量
-
720预期 2026/10/28
-
NRND
|
Mouser 零件编号
726-IMW120R090M1HXKS
NRND
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
375库存量
720预期 2026/10/28
|
|
|
¥78.3316
|
|
|
¥42.5106
|
|
|
¥39.211
|
|
|
¥35.482
|
|
最低： 1
倍数： 1
|
|
SiC MOSFETS
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
|
|
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200 V in TO247-4 package
- IMZ120R350M1HXKSA1
- Infineon Technologies
-
1:
¥52.771
-
297库存量
-
NRND
|
Mouser 零件编号
726-IMZ120R350M1HXKS
NRND
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC MOSFET discrete 1200 V in TO247-4 package
|
|
297库存量
|
|
|
¥52.771
|
|
|
¥29.945
|
|
|
¥27.459
|
|
|
¥24.8939
|
|
最低： 1
倍数： 1
|
|
SiC MOSFETS
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
|
|
|
碳化硅MOSFET CoolSiC 1200 V, 14 mohm SiC Trench MOSFET in TO247-4 package
- IMZA120R014M1HXKSA1
- Infineon Technologies
-
1:
¥268.2507
-
571库存量
-
720在途量
-
NRND
|
Mouser 零件编号
726-IMZA120R014M1HXK
NRND
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC 1200 V, 14 mohm SiC Trench MOSFET in TO247-4 package
|
|
571库存量
720在途量
|
|
|
¥268.2507
|
|
|
¥194.2131
|
|
|
¥172.4606
|
|
|
¥172.3815
|
|
|
报价
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
SiC MOSFETS
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
|
|
|
碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R030M1HXKSA1
- Infineon Technologies
-
1:
¥144.2558
-
480预期 2026/10/8
-
NRND
|
Mouser 零件编号
726-IMW120R030M1HXKS
NRND
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
480预期 2026/10/8
|
|
|
¥144.2558
|
|
|
¥98.1066
|
|
|
¥81.1453
|
|
最低： 1
倍数： 1
|
|
SiC MOSFETS
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
|
|
|
碳化硅MOSFET CoolSiC 1200 V, 40 mohm SiC Trench MOSFET in TO247-3 package
- IMW120R040M1HXKSA1
- Infineon Technologies
-
1:
¥120.3563
-
20库存量
-
2,640在途量
-
NRND
|
Mouser 零件编号
726-IMW120R040M1HXKS
NRND
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC 1200 V, 40 mohm SiC Trench MOSFET in TO247-3 package
|
|
20库存量
2,640在途量
在途量:
720 预期 2026/9/10
240 预期 2026/10/1
1,680 预期 2026/11/26
|
|
|
¥120.3563
|
|
|
¥86.9309
|
|
|
¥72.4556
|
|
|
¥64.4326
|
|
|
¥61.0426
|
|
最低： 1
倍数： 1
|
|
SiC MOSFETS
|
|
Through Hole
|
|
N-Channel
|
|
|
|
碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R140M1HXKSA1
- Infineon Technologies
-
1:
¥60.794
-
142库存量
-
240预期 2026/10/29
-
NRND
|
Mouser 零件编号
726-IMW120R140M1HXKS
NRND
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
142库存量
240预期 2026/10/29
|
|
|
¥60.794
|
|
|
¥35.3238
|
|
|
¥32.4197
|
|
|
¥30.3518
|
|
最低： 1
倍数： 1
|
|
SiC MOSFETS
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
|
|
|
碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R350M1HXKSA1
- Infineon Technologies
-
1:
¥51.6184
-
472库存量
-
240预期 2027/4/8
-
NRND
|
Mouser 零件编号
726-IMW120R350M1HXKS
NRND
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
472库存量
240预期 2027/4/8
|
|
|
¥51.6184
|
|
|
¥27.1313
|
|
|
¥24.8939
|
|
|
¥22.0802
|
|
最低： 1
倍数： 1
|
|
SiC MOSFETS
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
|
|
|
碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R060M1HXKSA1
- Infineon Technologies
-
1:
¥95.1234
-
5库存量
-
960预期 2026/9/1
-
NRND
|
Mouser 零件编号
726-IMZ120R060M1HXKS
NRND
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
5库存量
960预期 2026/9/1
|
|
|
¥95.1234
|
|
|
¥50.9517
|
|
|
¥47.234
|
|
最低： 1
倍数： 1
|
|
SiC MOSFETS
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
|
|
|
碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R220M1HXKSA1
- Infineon Technologies
-
1:
¥66.4214
-
1,554在途量
-
NRND
|
Mouser 零件编号
726-IMZ120R220M1HXKS
NRND
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
1,554在途量
在途量:
594 预期 2026/9/3
960 预期 2027/4/1
|
|
|
¥66.4214
|
|
|
¥40.0359
|
|
|
¥35.7306
|
|
|
¥28.1257
|
|
最低： 1
倍数： 1
|
|
SiC MOSFETS
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
|
|
|
碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R030M1HXKSA1
- Infineon Technologies
-
1:
¥149.7137
-
2,160在途量
-
NRND
|
Mouser 零件编号
726-IMZ120R030M1HXKS
NRND
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
2,160在途量
|
|
|
¥149.7137
|
|
|
¥114.0622
|
|
|
¥95.0443
|
|
|
¥84.6144
|
|
|
¥80.1509
|
|
最低： 1
倍数： 1
|
|
SiC MOSFETS
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
|
|
|
碳化硅MOSFET CoolSiC 1200 V, 20 mohm SiC Trench MOSFET in TO247-4 package
- IMZA120R020M1HXKSA1
- Infineon Technologies
-
1:
¥190.8231
-
2,877在途量
-
NRND
|
Mouser 零件编号
726-IMZA120R020M1HXK
NRND
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC 1200 V, 20 mohm SiC Trench MOSFET in TO247-4 package
|
|
2,877在途量
|
|
最低： 1
倍数： 1
|
|
SiC MOSFETS
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
|
|
|
碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R060M1HXKSA1
- Infineon Technologies
-
1:
¥91.6543
-
1,440在途量
-
NRND
|
Mouser 零件编号
726-IMW120R060M1HXKS
NRND
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
1,440在途量
|
|
|
¥91.6543
|
|
|
¥59.2233
|
|
|
¥49.7087
|
|
|
¥44.4203
|
|
最低： 1
倍数： 1
|
|
SiC MOSFETS
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
|
|
|
碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R090M1HXKSA1
- Infineon Technologies
-
1:
¥82.2188
-
960在途量
-
NRND
|
Mouser 零件编号
726-IMZ120R090M1HXKS
NRND
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
960在途量
在途量:
480 预期 2026/9/8
480 预期 2026/9/28
|
|
|
¥82.2188
|
|
|
¥45.2452
|
|
|
¥44.8271
|
|
|
¥39.211
|
|
最低： 1
倍数： 1
|
|
SiC MOSFETS
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
|
|
|
碳化硅MOSFET CoolSiC 1200 V, 40 mohm SiC Trench MOSFET in TO247-4 package
- IMZA120R040M1HXKSA1
- Infineon Technologies
-
1:
¥117.4522
-
741在途量
-
NRND
|
Mouser 零件编号
726-IMZA120R040M1HXK
NRND
|
Infineon Technologies
|
碳化硅MOSFET CoolSiC 1200 V, 40 mohm SiC Trench MOSFET in TO247-4 package
|
|
741在途量
|
|
|
¥117.4522
|
|
|
¥65.7547
|
|
|
¥63.0314
|
|
最低： 1
倍数： 1
|
|
SiC MOSFETS
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
|
