CoolMOS™ P7 MOSFET

Infineon Technologies CoolMOS™ P7 MOSFET 的性价比属同类最佳,简单易用,能够应对各种应用的挑战。700V和800V CoolMOS P7功率MOSFET开发用于反激式低功耗SMPS应用,包括适配器和充电器、照明、音频SMPS、AUX和工业电源。600V CoolMOS P7功率MOSFET不仅设计用于小功率应用,而且还用于大功率SMPS应用,如太阳能逆变器、服务器、电信和电动汽车充电站。P7 MOSFET经过彻底优化,用于硬开关和软开关拓扑结构。

结果: 115
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 商标名 封装
Infineon Technologies MOSFET LOW POWER_NEW 8,670库存量
最低: 1
倍数: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 4.5 A 1 Ohms - 20 V, 20 V 2.5 V 11 nC - 55 C + 150 C 37 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 2,248库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 37 A 69 mOhms - 20 V, 20 V 3 V 51 nC - 55 C + 150 C 29 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 3,511库存量
最低: 1
倍数: 1
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 41 A 53 mOhms - 20 V, 20 V 3 V 67 nC - 40 C + 150 C 201 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET LOW POWER_NEW 5,750库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 9 A 305 mOhms - 20 V, 20 V 3 V 13 nC - 55 C + 150 C 41 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_NEW 1,580库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 11 A 450 mOhms - 30 V, 30 V 3 V 24 nC - 55 C + 150 C 29 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET CONSUMER 4,860库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 700 V 8.5 A 490 mOhms - 30 V, 30 V 2.5 V 10.5 nC - 40 C + 150 C 24.9 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET CONSUMER 16,660库存量
最低: 1
倍数: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 700 V 6 A 740 mOhms - 16 V, 16 V 2.5 V 6.8 nC - 40 C + 150 C 30.5 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET LOW POWER_NEW 4,463库存量
最低: 1
倍数: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 7 A 640 mOhms - 20 V, 20 V 2.5 V 17 nC - 55 C + 150 C 51 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET LOW POWER_NEW 2,495库存量
最低: 1
倍数: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 6 A 490 mOhms - 20 V, 20 V 3 V 9 nC - 55 C + 150 C 30 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET LOW POWER_NEW 911库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 950 V 14 A 450 mOhms - 20 V, 20 V 2.5 V 35 nC - 55 C + 150 C 30 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET CONSUMER 1,669库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 700 V 12.5 A 300 mOhms - 30 V, 30 V 2.5 V 16.4 nC - 40 C + 150 C 26.5 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_NEW 1,964库存量
最低: 1
倍数: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 950 V 6 A 1.2 Ohms - 20 V, 20 V 2.5 V 15 nC - 55 C + 150 C 52 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET LOW POWER_NEW 2,981库存量
最低: 1
倍数: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 800 V 1.5 A 4.5 Ohms - 30 V, 30 V 3 V 4 nC - 50 C + 150 C 13 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_NEW 1,441库存量
最低: 1
倍数: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 800 V 6 A 900 mOhms - 20 V, 20 V 2.5 V 15 nC - 55 C + 150 C 45 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER_NEW 26,317库存量
28,800在途量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 18 A 145 mOhms - 20 V, 20 V 3 V 25 nC - 55 C + 150 C 72 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 18,403库存量
2,500预期 2026/10/1
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 37 A 69 mOhms - 20 V, 20 V 3 V 51 nC - 55 C + 150 C 129 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER_NEW 6,698库存量
6,240预期 2026/8/6
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 76 A 30 mOhms - 20 V, 20 V 3 V 121 nC - 55 C + 150 C 255 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 1,319库存量
最低: 1
倍数: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 37 A 69 mOhms - 20 V, 20 V 3 V 51 nC - 55 C + 150 C 129 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 2,603库存量
5,000预期 2026/7/27
最低: 1
倍数: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 18 A 145 mOhms - 20 V, 20 V 3 V 25 nC - 55 C + 150 C 72 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET LOW POWER_NEW 5,548库存量
最低: 1
倍数: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 12 A 214 mOhms - 20 V, 20 V 3 V 18 nC - 55 C + 150 C 53 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET LOW POWER_NEW 2,509库存量
最低: 1
倍数: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 9 A 305 mOhms - 20 V, 20 V 3 V 13 nC - 55 C + 150 C 41 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET LOW POWER_NEW 4,908库存量
最低: 1
倍数: 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 13 A 310 mOhms - 20 V, 20 V 2.5 V 30 nC - 55 C + 150 C 84 W Enhancement CoolMOS Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET HIGH POWER_NEW 473库存量
最低: 1
倍数: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 61 A 45 mOhms - 20 V, 20 V 3.5 V 90 nC - 55 C + 150 C 201 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 1,953库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 26 A 100 mOhms - 20 V, 20 V 3 V 36 nC - 55 C + 150 C 28 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET CONSUMER 3,655库存量
最低: 1
倍数: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 12 A 214 mOhms - 20 V, 20 V 3 V 18 nC - 40 C + 150 C 24 W Enhancement CoolMOS Tube