1200V H 系列沟槽式栅极场终止型 IGBT

STMicroelectronics 1200V H 系列沟槽式栅极场终止型 IGBT 是采用先进的、具有专利的沟槽式栅极和场终止型结构进行开发的高速 IGBT。这些器件在传导和开关损耗间取得最佳折中,使任何频率转换器的效率实现最大化。得益于 ST 高级的沟槽式栅极场终止高速技术,这些 IGBT 在 TJ=150C 时具有 5μs 的最低短路承受时间、最少的集电极电流关闭拖尾,以及低至 2.1 V (典型值)的极低饱和电压(sat)),尽可能降低了开关和打开过程中的电能损耗。此外,微正的 VCE(sat) 温度系数和非常紧密的参数分布实现了更为安全的并行工作。1200V H 系列沟槽式栅极场终止型 IGBT 是不间断电源、焊接机、光伏逆变器、功率因数校正、及高频转换器应用的理想选择。
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选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 封装 / 箱体 安装风格 配置 集电极—发射极最大电压 VCEO 集电极—射极饱和电压 栅极/发射极最大电压 在25 C的连续集电极电流 Pd-功率耗散 最小工作温度 最大工作温度 系列 封装


STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO247-4 pac 591库存量
¥72.1279
¥39.3692
¥34.0808
最低: 1
倍数: 1
Si Through Hole Single 650 V 1.55 V - 20 V, 20 V 115 A 357 W - 55 C + 175 C Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop 1200 V 50 A high-speed H series IGBT 416库存量
¥68.0712
¥43.0982
¥36.2278
¥35.1543
最低: 1
倍数: 1
Si Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 100 A 535 W - 55 C + 175 C Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, H series 1200 V, 40 A high speed 416库存量
¥59.2233
¥33.9113
¥28.3743
¥26.216
最低: 1
倍数: 1
Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C STGW40H120F2 Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, H series 600 V, 5 A high speed 2,258库存量
¥16.5432
¥10.4186
¥6.8139
¥5.4014
最低: 1
倍数: 1
Si TO-220FP-3 Through Hole Single 600 V 1.5 V - 20 V, 20 V 10 A 24 W - 55 C + 175 C STGF5H60DF Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, H series 600 V, 5 A high speed 2,906库存量
¥19.1874
¥12.1588
¥8.2151
¥6.6557
最低: 1
倍数: 1
Si TO-220-3 Through Hole Single 600 V 1.5 V - 20 V, 20 V 10 A 88 W - 55 C + 175 C STGP5H60DF Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, H series 1200 V, 15 A high speed 13库存量
1,200在途量
¥37.4708
¥24.5662
¥18.2834
¥15.3002
最低: 1
倍数: 1
Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 30 A 259 W - 55 C + 175 C STGW15H120DF2 Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, H series 1200 V, 25 A high speed 533库存量
1,800预期 2026/11/20
¥46.9854
¥30.7699
¥22.6678
¥20.1027
¥17.8653
最低: 1
倍数: 1
Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C STGW25H120DF2 Tube


STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, H series 1200 V, 15 A high speed 445库存量
¥48.138
¥31.5157
¥23.4927
¥19.6846
最低: 1
倍数: 1
Si Through Hole Single 1.2 kV 2.5 V - 20 V, 20 V 30 A 259 W - 55 C + 175 C STGWA15H120DF2 Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-247 long l 517库存量
¥27.8771
¥17.6167
¥12.4865
¥10.4186
¥9.0965
最低: 1
倍数: 1
Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 40 A 147 W - 55 C + 175 C Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO-247 long 834库存量
¥31.6852
¥17.3681
¥14.1476
¥12.9046
¥11.3339
最低: 1
倍数: 1
Si TO-247-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 86 A 272 W - 55 C + 175 C HB2 Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
3,600预期 2026/12/18
¥75.1902
¥52.9405
¥42.8496
¥38.0471
¥34.0808
最低: 1
倍数: 1
Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C STGW40H120DF2 Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, H series 600 V, 5 A high speed
10,000在途量
剪切带
¥12.5769
¥7.8083
¥5.1415
¥4.0341
卷轴
¥3.1301
最低: 1
倍数: 1
: 2,500
Si DPAK-3 (TO-252-3) SMD/SMT Single 600 V 1.5 V - 20 V, 20 V 10 A 83 W - 55 C + 175 C STGD5H60DF Reel, Cut Tape, MouseReel

STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
2,390在途量
¥52.1947
¥29.6173
¥24.6453
¥21.922
最低: 1
倍数: 1
Si TO-247-3 Through Hole Single 1.2 kV 2.5 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C STGWA40H120DF2 Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop, 650 V, 20 A, high speed HB2 series IGBT in a TO-247 long 493库存量
¥27.5494
¥14.9725
¥12.1588
¥10.0909
¥9.3451
最低: 1
倍数: 1
Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 40 A 147 W - 55 C + 175 C HB2 Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
400预期 2026/10/29
¥64.0258
¥42.8496
¥34.4085
¥30.6004
¥27.3799
最低: 1
倍数: 1
Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C STGW25H120F2 Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, H series 600 V, 7 A high speed 无库存交货期 20 周
¥16.9613
¥8.136
¥7.2659
¥5.7517
最低: 1
倍数: 1
Si TO-220-3 Through Hole Single 600 V 1.95 V - 20 V, 20 V 14 A 88 W - 55 C + 175 C STGP7H60DF Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, H series 1200 V, 25 A high speed 无库存交货期 22 周
¥17.9444
¥16.7127
¥15.6279
最低: 600
倍数: 600
Si Through Hole Single 1.2 kV 2.5 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C STGWA25H120DF2 Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, H series 1200 V, 25 A high speed 无库存交货期 22 周
¥26.555
¥23.7413
最低: 600
倍数: 600
Si Through Hole Single 1.2 kV 2.5 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C STGWA25H120F2 Tube
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop IGBT, H series 600 V, 5 A high speed 无库存交货期 15 周
剪切带
¥4.4635
¥4.3618
¥4.1923
最低: 2,000
倍数: 1,000
: 1,000
Si D2PAK-3 SMD/SMT Single 600 V 1.5 V - 20 V, 20 V 10 A 88 W - 55 C + 175 C STGB5H60DF Reel
STMicroelectronics 绝缘栅双极晶体管(IGBT) Trench gate field-stop 650 V, 30 A, soft-switching IH series IGBT in a TO-247 lo 无库存交货期 22 周
¥10.509
¥10.0118
最低: 600
倍数: 600
Si TO-247-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 60 A 180 W - 55 C + 175 C Tube