MOSFET模块 – Mouser

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3300V & 2300V Silicon Carbide (SiC) MOSFETs

Navitas Semiconductor 3300V and 2300V Silicon Carbide (SiC) MOSFETs are based on the latest GeneSiC™ trench-assisted planar (TAP) technology and feature flexible packaging formats, including power module, discrete, and known good die (KGD). For high-power density and high-reliability systems, the MOSFETs are integrated into an advanced SiCPAK™ G+ power module package, in half-bridge and full-bridge circuit configurations. The proprietary TAP SiC MOSFET technology offers improved performance, reliability, and avalanche robustness. The TAP architecture performs a multi-step e-field management profile to significantly reduce voltage stress and improve voltage blocking capabilities compared to trench and traditional-planar SiC MOSFETs. Navitas 3300V and 2300V SiC MOSFETs are ideal for AI data centers, grid and energy infrastructure, and industrial electrification, including energy storage, renewable, and megawatt-scale fast-charging applications.

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Vds-漏源极击穿电压

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图像	零件编号	制造商	描述	数据表	数量	封装 / 箱体	Vds-漏源极击穿电压	Id-连续漏极电流	Rds On-漏源导通电阻	最小工作温度	最大工作温度	系列	封装
MOSFET模块 2300V 5.8m Half-Bridge SiCPAK G+ SiC Power Module G4H06MT23GB2 GeneSiC Semiconductor 受限供货情况新产品	制造商零件编号 G4H06MT23GB2 Mouser 零件编号 905-G4H06MT23GB2 新产品	GeneSiC Semiconductor	MOSFET模块 2300V 5.8m Half-Bridge SiCPAK G+ SiC Power Module 了解更多关于GeneSiC Semiconductor navitas 3300v 2300v sic mosfets 的信息 Mouser 目前在您所在地区不销售该产品。		受限供货情况		2.3 kV	296 A				N-Channel Silicon Carbide (SiC) Power MOSFET	Tray
MOSFET模块 2300V 5.8m Half-Bridge SiCPAK G+ SiC Power Module, with Pre-Applied TIM G4H06MT23GB2-T GeneSiC Semiconductor 受限供货情况新产品	制造商零件编号 G4H06MT23GB2-T Mouser 零件编号 905-G4H06MT23GB2-T 新产品	GeneSiC Semiconductor	MOSFET模块 2300V 5.8m Half-Bridge SiCPAK G+ SiC Power Module, with Pre-Applied TIM 了解更多关于GeneSiC Semiconductor navitas 3300v 2300v sic mosfets 的信息 Mouser 目前在您所在地区不销售该产品。		受限供货情况		2.3 kV					N-Channel Silicon Carbide (SiC) Power MOSFET	Tray
MOSFET模块 2300V 8.0m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module G4H08MT23GB4 GeneSiC Semiconductor 受限供货情况新产品	制造商零件编号 G4H08MT23GB4 Mouser 零件编号 905-G4H08MT23GB4 新产品	GeneSiC Semiconductor	MOSFET模块 2300V 8.0m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module 了解更多关于GeneSiC Semiconductor navitas 3300v 2300v sic mosfets 的信息 Mouser 目前在您所在地区不销售该产品。	数据表	受限供货情况	SiCPAK G+	2.3 kV		8 mOhms	- 55 C	+ 150 C	N-Channel Silicon Carbide (SiC) Power MOSFET	Tray
MOSFET模块 2300V 8.0m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module, with Pre-Applied TIM G4H08MT23GB4-T GeneSiC Semiconductor 受限供货情况新产品	制造商零件编号 G4H08MT23GB4-T Mouser 零件编号 905-G4H08MT23GB4-T 新产品	GeneSiC Semiconductor	MOSFET模块 2300V 8.0m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module, with Pre-Applied TIM 了解更多关于GeneSiC Semiconductor navitas 3300v 2300v sic mosfets 的信息 Mouser 目前在您所在地区不销售该产品。	数据表	受限供货情况		2.3 kV		8 mOhms	- 55 C	+ 150 C	N-Channel Silicon Carbide (SiC) Power MOSFET	Tray
MOSFET模块 2300V 11.5m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module GeneSiC Semiconductor G4H11MT23GB4 G4H11MT23GB4 GeneSiC Semiconductor 受限供货情况新产品	制造商零件编号 G4H11MT23GB4 Mouser 零件编号 905-G4H11MT23GB4 新产品	GeneSiC Semiconductor	MOSFET模块 2300V 11.5m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module 了解更多关于GeneSiC Semiconductor navitas 3300v 2300v sic mosfets 的信息 Mouser 目前在您所在地区不销售该产品。		受限供货情况		2.3 kV					N-Channel Silicon Carbide (SiC) Power MOSFET	Tray
MOSFET模块 2300V 11.5m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module, with Pre-Applied TIM GeneSiC Semiconductor G4H11MT23GB4-T G4H11MT23GB4-T GeneSiC Semiconductor 受限供货情况新产品	制造商零件编号 G4H11MT23GB4-T Mouser 零件编号 905-G4H11MT23GB4-T 新产品	GeneSiC Semiconductor	MOSFET模块 2300V 11.5m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module, with Pre-Applied TIM 了解更多关于GeneSiC Semiconductor navitas 3300v 2300v sic mosfets 的信息 Mouser 目前在您所在地区不销售该产品。		受限供货情况		2.3 kV					N-Channel Silicon Carbide (SiC) Power MOSFET	Tray
MOSFET模块 3300V 22.5m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module GeneSiC Semiconductor G4H22MT33GB4 G4H22MT33GB4 GeneSiC Semiconductor 受限供货情况新产品	制造商零件编号 G4H22MT33GB4 Mouser 零件编号 905-G4H22MT33GB4 新产品	GeneSiC Semiconductor	MOSFET模块 3300V 22.5m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module 了解更多关于GeneSiC Semiconductor navitas 3300v 2300v sic mosfets 的信息 Mouser 目前在您所在地区不销售该产品。		受限供货情况		3.3 kV					N-Channel Silicon Carbide (SiC) Power MOSFET	Tray
MOSFET模块 3300V 22.5m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module, with Pre-Applied TIM GeneSiC Semiconductor G4H22MT33GB4-T G4H22MT33GB4-T GeneSiC Semiconductor 受限供货情况新产品	制造商零件编号 G4H22MT33GB4-T Mouser 零件编号 905-G4H22MT33GB4-T 新产品	GeneSiC Semiconductor	MOSFET模块 3300V 22.5m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module, with Pre-Applied TIM 了解更多关于GeneSiC Semiconductor navitas 3300v 2300v sic mosfets 的信息 Mouser 目前在您所在地区不销售该产品。		受限供货情况		3.3 kV					N-Channel Silicon Carbide (SiC) Power MOSFET	Tray

3300V & 2300V Silicon Carbide (SiC) MOSFETs

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3300V & 2300V Silicon Carbide (SiC) MOSFETs

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