分离式半导体类型
更改类别视图
已应用过滤器:
制造商 = Navitas Semiconductor 返回“产品”选项卡，以修改您的当前过滤条件。

Navitas Semiconductor 3300V & 2300V Silicon Carbide (SiC) MOSFETs
Navitas Semiconductor 3300V & 2300V Silicon Carbide (SiC) MOSFETs
06/18/2026
Based on latest GeneSiC™ trench-assisted planar (TAP) technology, offers flexible packaging formats.
Navitas Semiconductor NV6428 Bi-Directional GaNFast™ Power Switches
Navitas Semiconductor NV6428 Bi-Directional GaNFast™ Power Switches
02/26/2026
Designed to block voltage in both directions using unique substrate clamp technology.
Navitas Semiconductor NV60x GaNFast™ Power FETs
Navitas Semiconductor NV60x GaNFast™ Power FETs
02/26/2026
Enhancement‑mode GaN power devices engineered for fast‑switching, high‑efficiency power systems.
Navitas Semiconductor NV6427 Bi-Directional GaNFast™ Power Switches
Navitas Semiconductor NV6427 Bi-Directional GaNFast™ Power Switches
02/26/2026
Switches are designed to block voltage in both directions, with unique substrate-clamp technology.
Navitas Semiconductor SiCPAK™ F/G 1200V High-Power Modules
Navitas Semiconductor SiCPAK™ F/G 1200V High-Power Modules
02/20/2025
Robust, high-voltage SiC MOSFETs, critical for reliable, harsh-environment, high-power applications.
Navitas Semiconductor 650V Gen-3 Fast (G3F) SiC MOSFETs
Navitas Semiconductor 650V Gen-3 Fast (G3F) SiC MOSFETs
09/06/2024
Ideal for AI data center power supplies, EV charging, energy storage systems, and solar solutions.
Navitas Semiconductor Gen-3 Fast (G3F) SiC MOSFETs
Navitas Semiconductor Gen-3 Fast (G3F) SiC MOSFETs
09/03/2024
Developed using a proprietary trench-assisted planar technology for high-speed performance.
Navitas Semiconductor 650V SiC Schottky MPS™ Diodes
Navitas Semiconductor 650V SiC Schottky MPS™ Diodes
09/03/2024
Combine excellent forward and switching characteristics with best-in-class thermal conductivity.
Navitas Semiconductor 1200V Gen-3 Fast (G3F) SiC MOSFETs
Navitas Semiconductor 1200V Gen-3 Fast (G3F) SiC MOSFETs
09/03/2024
Enable 22kW, 800V bi-directional on-board chargers for Electric Vehicles (EVs).
Navitas Semiconductor GaNFast™功率IC
Navitas Semiconductor GaNFast™功率IC
03/01/2023
具有集成栅极驱动、宽范围VCC、PWM输入和内部2kV ESD保护等特性。
查看：10 的 1 - 10

IXYS IXSH50N120L3KHV SiC MOSFET
IXYS IXSH50N120L3KHV SiC MOSFET
09/02/2026
1200V、55mΩ和48.3A SiC MOSFET，推荐用于工业开关电源。
IXYS IXSH150N120L3KHV SiC MOSFET
IXYS IXSH150N120L3KHV SiC MOSFET
09/02/2026
1200V、13.5mΩ和147A SiC MOSFET，推荐用于工业开关电源。
IXYS IXSH100N120L3KHV SiC MOSFET
IXYS IXSH100N120L3KHV SiC MOSFET
09/02/2026
1200V、21mΩ和102A SiC MOSFET，推荐用于工业开关电源。
IXYS IXSH65N120L3KHV SiC MOSFET
IXYS IXSH65N120L3KHV SiC MOSFET
09/02/2026
适用于工业开关电源的1200V、35mΩ和67A SiC MOSFET。
IXYS IXSH110N120L3KHV SiC MOSFET
IXYS IXSH110N120L3KHV SiC MOSFET
09/02/2026
1200V、18mΩ和112A SiC MOSFET，推荐用于工业开关电源。
Microchip Technology HV-D3 mSiC® Power Modules
Microchip Technology HV-D3 mSiC® Power Modules
09/01/2026
Simplifies and accelerates adoption of SSTs in data centers & other high-voltage power applications.
IXYS SK002xSx敏感型SCR
IXYS SK002xSx敏感型SCR
08/27/2026
具有微处理器驱动支持和高抗噪的敏感型SCR。
onsemi NXH011F120M3F2碳化硅MOSFET
onsemi NXH011F120M3F2碳化硅MOSFET
08/25/2026
全桥EliteSiC MOSFET模块，导通电阻为11mΩ，额定电压为1200V。
onsemi 80V单N沟道功率MOSFET
onsemi 80V单N沟道功率MOSFET
08/25/2026
具有低RDS(on)，可最大限度降低导通损耗，同时具备低QG和低电容，可最大限度减少驱动器损耗。
STMicroelectronics STGI15C60S三相逆变器和IGBT SLLIMM
STMicroelectronics STGI15C60S三相逆变器和IGBT SLLIMM
08/19/2026
该器件非常适用于工作频率高达20kHz的硬开关电路的电机驱动。
Diotec Semiconductor BAS40-06-AQ SMD Small Signal Schottky Diode
Diotec Semiconductor BAS40-06-AQ SMD Small Signal Schottky Diode
08/17/2026
Offers a very high switching speed, low leakage current, and a low junction capacitance.
Diotec Semiconductor ESD9BL24P-AQ ESD Protection Diode
Diotec Semiconductor ESD9BL24P-AQ ESD Protection Diode
08/17/2026
Features a low junction capacitance and low leakage current in a miniature case outline.
Diotec Semiconductor P6KE47CA-AQ Transient Voltage Suppressor Diode
Diotec Semiconductor P6KE47CA-AQ Transient Voltage Suppressor Diode
08/14/2026
Provide reliable protection against transient voltage spikes, ESD, and other overvoltage events.
Diotec Semiconductor ESD3B36WS-AQ ESD Protection Diode
Diotec Semiconductor ESD3B36WS-AQ ESD Protection Diode
08/14/2026
Features high peak-pulse power and bidirectional clamping.
Diotec Semiconductor SKL12-AQ SMD Schottky Barrier Rectifier Diode
Diotec Semiconductor SKL12-AQ SMD Schottky Barrier Rectifier Diode
08/14/2026
Features a low forward voltage drop in a low-profile package.
iDEAL Semiconductor iS20M028S1PQ Automotive SuperQ® Power MOSFET
iDEAL Semiconductor iS20M028S1PQ Automotive SuperQ® Power MOSFET
08/12/2026
Automotive 200V N-channel MOSFET with SuperQ technology and TO-220 packaging.
Nexperia 400V/650V DPAK回流整流器
Nexperia 400V/650V DPAK回流整流器
08/12/2026
适用于高压电源转换的超快和特快DPAK回流整流器。
STMicroelectronics SGT1D5R10MEA PowerGaN晶体管
STMicroelectronics SGT1D5R10MEA PowerGaN晶体管
08/11/2026
具有极低的导通损耗、大电流能力和超快的开关操作速度。
STMicroelectronics STH4N150-2AG N沟道功率MOSFET
STMicroelectronics STH4N150-2AG N沟道功率MOSFET
08/10/2026
专为确保汽车应用的高电压和可靠性而设计。
STMicroelectronics SGT3D5R10MEB PowerGaN晶体管
STMicroelectronics SGT3D5R10MEB PowerGaN晶体管
08/10/2026
设计用于高效大功率开关应用。
Texas Instruments ESD2CANFD24W-Q1 ESD 保护二极管
Texas Instruments ESD2CANFD24W-Q1 ESD 保护二极管
08/04/2026
用于CAN、CAN FD、CAN SIC和CAN XL网络的汽车级ESD保护二极管。
onsemi NVNJWS1K6N061L N 沟道 MOSFET
onsemi NVNJWS1K6N061L N 沟道 MOSFET
07/30/2026
具有低RDS(on)和低栅极阈值，且集成ESD保护。
onsemi EMD4DXV6数字晶体管（BRT）
onsemi EMD4DXV6数字晶体管（BRT）
07/30/2026
设计用于替代单个设备及其外部电阻偏置网络。
ROHM Semiconductor 600V超接合点（SJ）MOSFET
ROHM Semiconductor 600V超接合点（SJ）MOSFET
07/21/2026
紧凑、扁平封装选项，提供出色的散热性能。
IXYS DK610S3RP 1600V通用整流器二极管
IXYS DK610S3RP 1600V通用整流器二极管
07/20/2026
节省空间，非常适合用于自动化组装，也适合直流相控应用。
查看：1173 的 1 - 25