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射频放大器 BROADBAND AMPL / SMA / RoHS
- ZX60-272LN-S+
- Mini-Circuits
-
1:
¥1,254.7972
-
13库存量
-
150在途量
|
Mouser 零件编号
139-ZX60-272LN-S
|
Mini-Circuits
|
射频放大器 BROADBAND AMPL / SMA / RoHS
|
|
13库存量
150在途量
在途量:
70 预期 2026/11/30
80 预期 2027/2/8
|
|
最低: 1
倍数: 1
|
|
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射频放大器 SMT Low Noise Amplifier, 2300 - 2700 MHz, 50?
- YSF-272+
- Mini-Circuits
-
1:
¥35.2334
-
318库存量
-
500预期 2026/11/16
|
Mouser 零件编号
139-YSF-272+
|
Mini-Circuits
|
射频放大器 SMT Low Noise Amplifier, 2300 - 2700 MHz, 50?
|
|
318库存量
500预期 2026/11/16
|
|
|
¥35.2334
|
|
|
¥33.9113
|
|
|
¥32.5892
|
|
|
¥29.6964
|
|
|
¥29.6964
|
|
最低: 1
倍数: 1
:
500
|
|
|
|
|
射频放大器 High Gain Linear Driver Tuning Range: 2.3 to 3 GHz
- GRF5226
- Guerrilla RF
-
1:
¥52.1156
-
1,480库存量
-
新产品
|
Mouser 零件编号
459-GRF5226
新产品
|
Guerrilla RF
|
射频放大器 High Gain Linear Driver Tuning Range: 2.3 to 3 GHz
|
|
1,480库存量
|
|
|
¥52.1156
|
|
|
¥39.9568
|
|
|
¥36.8945
|
|
|
¥33.5836
|
|
|
查看
|
|
|
¥30.1936
|
|
|
¥32.0129
|
|
|
¥31.0185
|
|
|
¥30.6908
|
|
|
¥30.1936
|
|
最低: 1
倍数: 1
:
1,500
|
|
|
|
|
射频放大器 WIRELESS INFRASTRUCTURE
- BGAP2D20AE6327XTSA1
- Infineon Technologies
-
1:
¥47.8103
-
1,995库存量
|
Mouser 零件编号
726-BGAP2D20AE6327XT
|
Infineon Technologies
|
射频放大器 WIRELESS INFRASTRUCTURE
|
|
1,995库存量
|
|
|
¥47.8103
|
|
|
¥36.4764
|
|
|
¥33.5836
|
|
|
¥30.4422
|
|
|
查看
|
|
|
¥27.7076
|
|
|
¥28.9506
|
|
|
¥28.0353
|
|
|
¥27.798
|
|
|
¥27.7076
|
|
最低: 1
倍数: 1
:
2,000
|
|
|
|
|
射频放大器 WIRELESS INFRASTRUCTURE
- BGAP2S20AE6327XTSA1
- Infineon Technologies
-
1:
¥47.4826
-
1,883库存量
|
Mouser 零件编号
726-BGAP2S20AE6327XT
|
Infineon Technologies
|
射频放大器 WIRELESS INFRASTRUCTURE
|
|
1,883库存量
|
|
|
¥47.4826
|
|
|
¥38.5443
|
|
|
¥35.9792
|
|
|
¥32.8378
|
|
|
查看
|
|
|
¥27.459
|
|
|
¥31.2671
|
|
|
¥30.9394
|
|
|
¥27.459
|
|
最低: 1
倍数: 1
:
2,000
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 B11G2327N71D/PQFN-12x7/REELDP
- B11G2327N71DYZ
- Ampleon
-
1:
¥576.6164
-
303库存量
-
Mouser 的新产品
|
Mouser 零件编号
94-B11G2327N71DYZ
Mouser 的新产品
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 B11G2327N71D/PQFN-12x7/REELDP
|
|
303库存量
|
|
|
¥576.6164
|
|
|
¥477.6849
|
|
|
¥453.6159
|
|
|
¥451.1299
|
|
|
¥429.626
|
|
最低: 1
倍数: 1
:
300
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLM9D2327S-50PBG/SOT502/REELDP
- BLM9D2327S-50PBGY
- Ampleon
-
1:
¥513.4155
-
90库存量
-
Mouser 的新产品
|
Mouser 零件编号
94-BLM9D2327S-50PBGY
Mouser 的新产品
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLM9D2327S-50PBG/SOT502/REELDP
|
|
90库存量
|
|
|
¥513.4155
|
|
|
¥423.9195
|
|
|
¥402.8224
|
|
|
¥398.5284
|
|
|
¥382.9796
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
:
100
|
|
|
|
|
射频放大器 WIRELESS INFRASTRUCTURE
- BGA7P220E6327XTSA1
- Infineon Technologies
-
1:
¥35.1543
-
5库存量
|
Mouser 零件编号
726-BGA7P220E6327XTS
|
Infineon Technologies
|
射频放大器 WIRELESS INFRASTRUCTURE
|
|
5库存量
|
|
|
¥35.1543
|
|
|
¥27.5494
|
|
|
¥25.7301
|
|
|
¥23.5718
|
|
|
查看
|
|
|
¥19.2778
|
|
|
¥22.4192
|
|
|
¥21.922
|
|
|
¥20.8485
|
|
|
¥19.2778
|
|
最低: 1
倍数: 1
:
2,000
|
|
|
|
|
射频放大器 RF MMIC 3 TO 6 GHZ
- BGA9H1BN6E6327XTSA1
- Infineon Technologies
-
1:
¥4.8025
-
1,190库存量
-
12,000预期 2026/9/2
|
Mouser 零件编号
726-BGA9H1BN6E6327XT
|
Infineon Technologies
|
射频放大器 RF MMIC 3 TO 6 GHZ
|
|
1,190库存量
12,000预期 2026/9/2
|
|
|
¥4.8025
|
|
|
¥3.9324
|
|
|
¥3.7064
|
|
|
¥3.39
|
|
|
查看
|
|
|
¥2.3617
|
|
|
¥3.1979
|
|
|
¥3.0736
|
|
|
¥2.5764
|
|
|
¥2.486
|
|
|
¥2.3617
|
|
|
¥2.3617
|
|
最低: 1
倍数: 1
:
12,000
|
|
|
|
|
射频放大器 RF BIP TRANSISTORS
- BGB 707L7ESD E6327
- Infineon Technologies
-
1:
¥8.9383
-
685库存量
-
寿命结束
|
Mouser 零件编号
726-BGB707L7ESDE6327
寿命结束
|
Infineon Technologies
|
射频放大器 RF BIP TRANSISTORS
|
|
685库存量
|
|
|
¥8.9383
|
|
|
¥6.3732
|
|
|
¥5.7404
|
|
|
¥5.0511
|
|
|
查看
|
|
|
¥4.0793
|
|
|
¥4.7121
|
|
|
¥4.52
|
|
|
¥4.3731
|
|
|
¥4.181
|
|
|
¥4.0793
|
|
|
¥4.0793
|
|
最低: 1
倍数: 1
:
7,500
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLM9D2327-26B/SOT1275/REELDP
- BLM9D2327-26BZ
- Ampleon
-
1:
¥245.3343
-
1,500预期 2026/9/18
-
Mouser 的新产品
|
Mouser 零件编号
94-BLM9D2327-26BZ
Mouser 的新产品
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLM9D2327-26B/SOT1275/REELDP
|
|
1,500预期 2026/9/18
|
|
|
¥245.3343
|
|
|
¥214.3158
|
|
|
¥203.4791
|
|
|
¥188.7552
|
|
|
¥177.9185
|
|
|
¥173.8731
|
|
最低: 1
倍数: 1
:
500
|
|
|
|
|
射频放大器 2.3-2.7 GHz .25W B7/B30/B40/41
- QPA9807TR13
- Qorvo
-
1:
¥66.5909
-
2,500预期 2026/10/1
|
Mouser 零件编号
772-QPA9807TR13
|
Qorvo
|
射频放大器 2.3-2.7 GHz .25W B7/B30/B40/41
|
|
2,500预期 2026/10/1
|
|
|
¥66.5909
|
|
|
¥51.2794
|
|
|
¥47.4826
|
|
|
¥43.3468
|
|
|
查看
|
|
|
¥33.8322
|
|
|
¥40.115
|
|
|
¥38.872
|
|
|
¥33.8322
|
|
最低: 1
倍数: 1
:
2,500
|
|
|
|
|
射频前端 Single Channel Switch LNA module, 2.3-2.7GHz
- PE53111A-Z
- pSemi
-
3,000:
¥54.3417
-
无库存
|
Mouser 零件编号
81-PE53111A-Z
|
pSemi
|
射频前端 Single Channel Switch LNA module, 2.3-2.7GHz
|
|
无库存
|
|
最低: 3,000
倍数: 3,000
:
3,000
|
|
|
|
|
射频前端 Dual Channel Switch LNA module, 2.3-2.7GHz
- PE53211A-Z
- pSemi
-
3,000:
¥62.4551
-
无库存
|
Mouser 零件编号
81-PE53211A-Z
|
pSemi
|
射频前端 Dual Channel Switch LNA module, 2.3-2.7GHz
|
|
无库存
|
|
最低: 3,000
倍数: 3,000
:
3,000
|
|
|
|
|
射频前端 2.3 GHz to 2.7 GHz, Receiver Front End
- ADRF5532BCPZN
- Analog Devices
-
受限供货情况
|
Mouser 零件编号
584-ADRF5532BCPZN
|
Analog Devices
|
射频前端 2.3 GHz to 2.7 GHz, Receiver Front End
|
|
|
|
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 B10G2327N55D/PQFN/REELDP
- B10G2327N55DZ
- Ampleon
-
受限供货情况
|
Mouser 零件编号
94-B10G2327N55DZ
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 B10G2327N55D/PQFN/REELDP
|
|
|
|
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 B11G2327N71D/PQFN-12x7/REELDP
- B11G2327N71DX
- Ampleon
-
受限供货情况
|
Mouser 零件编号
94-B11G2327N71DX
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 B11G2327N71D/PQFN-12x7/REELDP
|
|
|
|
|
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLM9D2327-26B/SOT1462/REELDP
- BLM9D2327-26BX
- Ampleon
-
受限供货情况
|
Mouser 零件编号
94-BLM9D2327-26BX
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLM9D2327-26B/SOT1462/REELDP
|
|
|
|
|
|
|