|
|
交流/直流转换器 ACTIVE CLAMP FLYBACK
onsemi NCP1568G03DBR2G
- NCP1568G03DBR2G
- onsemi
-
1:
¥13.899
-
2,322库存量
-
寿命结束
|
Mouser 零件编号
863-NCP1568G03DBR2G
寿命结束
|
onsemi
|
交流/直流转换器 ACTIVE CLAMP FLYBACK
|
|
2,322库存量
|
|
|
¥13.899
|
|
|
¥11.4695
|
|
|
¥10.8593
|
|
|
¥10.1587
|
|
|
查看
|
|
|
¥9.379
|
|
|
¥9.8988
|
|
|
¥9.7293
|
|
|
¥9.379
|
|
最低: 1
倍数: 1
:
2,500
|
|
|
|
|
射频放大器 GaN Amplifier 65 V, 1300 W 960 - 1215 MHz
- MAPC-A1501-AS000
- MACOM
-
1:
¥5,295.4399
-
13库存量
-
工厂特别订单
|
Mouser 零件编号
937-MAPC-A1501-AS000
工厂特别订单
|
MACOM
|
射频放大器 GaN Amplifier 65 V, 1300 W 960 - 1215 MHz
|
|
13库存量
|
|
|
¥5,295.4399
|
|
|
¥5,140.4943
|
|
最低: 1
倍数: 1
|
|
|
|
|
栅极驱动器 600-V 150-m? GaN wit h integrated driver A 595-LMG3410R150RWHR
- LMG3410R150RWHT
- Texas Instruments
-
1:
¥101.4062
-
110库存量
|
Mouser 零件编号
595-LMG3410R150RWHT
|
Texas Instruments
|
栅极驱动器 600-V 150-m? GaN wit h integrated driver A 595-LMG3410R150RWHR
|
|
110库存量
|
|
|
¥101.4062
|
|
|
¥79.6537
|
|
|
¥75.6874
|
|
|
¥69.2351
|
|
|
¥65.9242
|
|
|
查看
|
|
|
¥62.7828
|
|
|
¥61.7884
|
|
|
报价
|
|
最低: 1
倍数: 1
:
250
|
|
|
|
|
栅极驱动器 600-V 150-m? GaN wit h integrated driver A 595-LMG3411R150RWHR
- LMG3411R150RWHT
- Texas Instruments
-
1:
¥119.441
-
140库存量
|
Mouser 零件编号
595-LMG3411R150RWHT
|
Texas Instruments
|
栅极驱动器 600-V 150-m? GaN wit h integrated driver A 595-LMG3411R150RWHR
|
|
140库存量
|
|
|
¥119.441
|
|
|
¥94.2081
|
|
|
¥87.9253
|
|
|
¥81.8007
|
|
|
¥75.4388
|
|
|
查看
|
|
|
¥72.546
|
|
|
报价
|
|
最低: 1
倍数: 1
:
250
|
|
|
|
|
GaN 场效应晶体管 700 V, 53 mOhm typ., 26 A, e-mode PowerGaN transistor
- SGT070R70HTO
- STMicroelectronics
-
1:
¥82.3883
-
337库存量
-
新产品
|
Mouser 零件编号
511-SGT070R70HTO
新产品
|
STMicroelectronics
|
GaN 场效应晶体管 700 V, 53 mOhm typ., 26 A, e-mode PowerGaN transistor
|
|
337库存量
|
|
|
¥82.3883
|
|
|
¥56.50
|
|
|
¥42.4315
|
|
|
¥34.6571
|
|
|
¥34.578
|
|
最低: 1
倍数: 1
:
1,800
|
|
|
|
|
GaN 场效应晶体管 700 V, 60 mOhm typ., 29 A, e-mode PowerGaN transistor
- SGT080R70ILB
- STMicroelectronics
-
1:
¥56.6582
-
675库存量
-
新产品
|
Mouser 零件编号
511-SGT080R70ILB
新产品
|
STMicroelectronics
|
GaN 场效应晶体管 700 V, 60 mOhm typ., 29 A, e-mode PowerGaN transistor
|
|
675库存量
|
|
|
¥56.6582
|
|
|
¥38.1375
|
|
|
¥27.6285
|
|
|
¥25.8883
|
|
|
¥22.4983
|
|
|
¥21.0971
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
栅极驱动器 650V 170mohm GaN FET with integrated dri
- LMG3624ZREQR
- Texas Instruments
-
1:
¥55.7542
-
2,000库存量
-
新产品
|
Mouser 零件编号
595-LMG3624ZREQR
新产品
|
Texas Instruments
|
栅极驱动器 650V 170mohm GaN FET with integrated dri
|
|
2,000库存量
|
|
|
¥55.7542
|
|
|
¥42.7253
|
|
|
¥39.5274
|
|
|
¥35.9566
|
|
|
查看
|
|
|
¥34.4763
|
|
|
¥33.8774
|
|
|
¥33.6966
|
|
|
¥32.0468
|
|
最低: 1
倍数: 1
|
|
|
|
|
栅极驱动器 650V 270mohm GaN FET with integrated dri
- LMG3626ZREQR
- Texas Instruments
-
1:
¥46.7368
-
2,000库存量
-
新产品
|
Mouser 零件编号
595-LMG3626ZREQR
新产品
|
Texas Instruments
|
栅极驱动器 650V 270mohm GaN FET with integrated dri
|
|
2,000库存量
|
|
|
¥46.7368
|
|
|
¥35.5724
|
|
|
¥32.7587
|
|
|
¥29.6964
|
|
|
查看
|
|
|
¥28.2048
|
|
|
¥27.3799
|
|
|
¥27.0522
|
|
|
¥26.7132
|
|
最低: 1
倍数: 1
|
|
|
|
|
GaN 场效应晶体管 100 V eGaN FET, 5.2 mohm Rdson, 2.3 mm x 1.45 mm, Cu pillar CSP
- EPC2090
- EPC
-
1:
¥34.578
-
1,901库存量
-
新产品
|
Mouser 零件编号
65-EPC2090
新产品
|
EPC
|
GaN 场效应晶体管 100 V eGaN FET, 5.2 mohm Rdson, 2.3 mm x 1.45 mm, Cu pillar CSP
|
|
1,901库存量
|
|
|
¥34.578
|
|
|
¥22.7469
|
|
|
¥15.9669
|
|
|
¥13.3227
|
|
|
¥11.0853
|
|
|
¥10.8367
|
|
最低: 1
倍数: 1
:
2,500
|
|
|
|
|
GaN 场效应晶体管 100 V eGaN FET, 2 mohm Rdson, 3.23 mm x 2.88 mm, Cu pillar CSP
- EPC2091
- EPC
-
1:
¥80.4786
-
800库存量
-
新产品
|
Mouser 零件编号
65-EPC2091
新产品
|
EPC
|
GaN 场效应晶体管 100 V eGaN FET, 2 mohm Rdson, 3.23 mm x 2.88 mm, Cu pillar CSP
|
|
800库存量
|
|
|
¥80.4786
|
|
|
¥55.1666
|
|
|
¥41.1885
|
|
|
¥33.5836
|
|
最低: 1
倍数: 1
:
1,000
|
|
|
|
|
栅极驱动器 Integrated Circuits 100 V ePower stage in FCQFN
- EPC23102
- EPC
-
1:
¥70.8849
-
1,520库存量
-
3,000预期 2026/7/29
-
新产品
|
Mouser 零件编号
65-EPC23102
新产品
|
EPC
|
栅极驱动器 Integrated Circuits 100 V ePower stage in FCQFN
|
|
1,520库存量
3,000预期 2026/7/29
|
|
|
¥70.8849
|
|
|
¥55.0084
|
|
|
¥51.0308
|
|
|
¥46.6464
|
|
|
查看
|
|
|
¥39.8664
|
|
|
¥44.5785
|
|
|
¥43.3468
|
|
|
¥42.1829
|
|
|
¥39.8664
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
GaN 场效应晶体管 CoolGaN Transistor 700 V G5
- IGD70R140D2SAUMA1
- Infineon Technologies
-
1:
¥23.7413
-
2,086库存量
-
新产品
|
Mouser 零件编号
726-IGD70R140D2SAUMA
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 CoolGaN Transistor 700 V G5
|
|
2,086库存量
|
|
|
¥23.7413
|
|
|
¥15.3906
|
|
|
¥10.5881
|
|
|
¥8.5202
|
|
|
¥7.0851
|
|
|
查看
|
|
|
¥7.9552
|
|
|
¥6.4975
|
|
最低: 1
倍数: 1
:
2,500
|
|
|
|
|
GaN 场效应晶体管 CoolGaN Transistor 700 V G5
- IGD70R500D2SAUMA1
- Infineon Technologies
-
1:
¥15.5488
-
3,604库存量
-
新产品
|
Mouser 零件编号
726-IGD70R500D2SAUMA
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 CoolGaN Transistor 700 V G5
|
|
3,604库存量
|
|
|
¥15.5488
|
|
|
¥9.9214
|
|
|
¥6.6218
|
|
|
¥5.2319
|
|
|
¥4.2827
|
|
|
查看
|
|
|
¥4.7799
|
|
|
¥3.8307
|
|
|
¥3.5821
|
|
最低: 1
倍数: 1
:
2,500
|
|
|
|
|
GaN 场效应晶体管 CoolGaN Drive HB 600 V G5
- IGI60L1111B1MXUMA1
- Infineon Technologies
-
1:
¥56.161
-
3,016库存量
-
新产品
|
Mouser 零件编号
726-IGI60L1111B1MXUM
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 CoolGaN Drive HB 600 V G5
|
|
3,016库存量
|
|
|
¥56.161
|
|
|
¥43.2564
|
|
|
¥40.0359
|
|
|
¥36.4764
|
|
|
查看
|
|
|
¥29.6964
|
|
|
¥34.8266
|
|
|
¥33.7531
|
|
|
¥32.9169
|
|
|
¥29.6964
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
GaN 场效应晶体管 140 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode
- IGI60L1414B1MXUMA1
- Infineon Technologies
-
1:
¥62.7037
-
2,646库存量
-
新产品
|
Mouser 零件编号
726-IGI60L1414B1MXUM
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 140 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode
|
|
2,646库存量
|
|
|
¥62.7037
|
|
|
¥45.4938
|
|
|
¥42.5106
|
|
|
¥36.2278
|
|
|
查看
|
|
|
¥28.6229
|
|
|
¥35.482
|
|
|
¥32.0129
|
|
|
¥31.7643
|
|
|
¥28.6229
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
GaN 场效应晶体管 270 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode
- IGI60L2727B1MXUMA1
- Infineon Technologies
-
1:
¥43.0078
-
2,667库存量
-
新产品
|
Mouser 零件编号
726-IGI60L2727B1MXUM
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 270 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode
|
|
2,667库存量
|
|
|
¥43.0078
|
|
|
¥32.5892
|
|
|
¥29.945
|
|
|
¥27.0522
|
|
|
查看
|
|
|
¥24.6453
|
|
|
¥25.7301
|
|
|
¥25.2329
|
|
|
¥24.7357
|
|
|
¥24.6453
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
GaN 场效应晶体管 500 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode
- IGI60L5050B1MXUMA1
- Infineon Technologies
-
1:
¥33.9113
-
2,082库存量
-
新产品
|
Mouser 零件编号
726-IGI60L5050B1MXUM
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 500 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode
|
|
2,082库存量
|
|
|
¥33.9113
|
|
|
¥25.3911
|
|
|
¥23.3232
|
|
|
¥20.9276
|
|
|
查看
|
|
|
¥16.5432
|
|
|
¥19.8541
|
|
|
¥19.2778
|
|
|
¥18.532
|
|
|
¥16.5432
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
GaN 场效应晶体管 Two 140 mohm / 650 V GaN transistors in half-bridge configuration
- IGI65D1414A3MSXUMA1
- Infineon Technologies
-
1:
¥61.5398
-
2,975库存量
-
新产品
|
Mouser 零件编号
726-IGI65D1414A3MSXU
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 Two 140 mohm / 650 V GaN transistors in half-bridge configuration
|
|
2,975库存量
|
|
|
¥61.5398
|
|
|
¥41.6066
|
|
|
¥30.3518
|
|
|
¥29.6173
|
|
|
¥25.8092
|
|
|
¥24.069
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
GaN 场效应晶体管 CoolGaN Bidirectional Switch
- IGK048B041SXTSA1
- Infineon Technologies
-
1:
¥11.0853
-
3,162库存量
-
新产品
|
Mouser 零件编号
726-IGK048B041SXTSA1
新产品
|
Infineon Technologies
|
GaN 场效应晶体管 CoolGaN Bidirectional Switch
|
|
3,162库存量
|
|
|
¥11.0853
|
|
|
¥7.3224
|
|
|
¥6.0907
|
|
|
¥5.8534
|
|
|
¥4.972
|
|
|
查看
|
|
|
¥5.65
|
|
|
¥4.8364
|
|
最低: 1
倍数: 1
:
4,000
|
|
|
|
|
交流/直流转换器 20 W (85-580 VAC)
- INN3624C-H606-TL
- Power Integrations
-
1:
¥24.9843
-
1,440库存量
-
新产品
|
Mouser 零件编号
869-INN3624C-H606-TL
新产品
|
Power Integrations
|
交流/直流转换器 20 W (85-580 VAC)
|
|
1,440库存量
|
|
|
¥24.9843
|
|
|
¥18.7806
|
|
|
¥17.1195
|
|
|
¥15.4697
|
|
|
¥13.1532
|
|
|
查看
|
|
|
¥14.6448
|
|
|
¥14.3058
|
|
|
¥13.9781
|
|
|
¥12.8255
|
|
最低: 1
倍数: 1
:
2,000
|
|
|
|
|
交流/直流转换器 35 W (85-580 VAC)
- INN3626C-H606-TL
- Power Integrations
-
1:
¥28.3743
-
1,592库存量
-
新产品
|
Mouser 零件编号
869-INN3626C-H606-TL
新产品
|
Power Integrations
|
交流/直流转换器 35 W (85-580 VAC)
|
|
1,592库存量
|
|
|
¥28.3743
|
|
|
¥21.3457
|
|
|
¥19.6055
|
|
|
¥17.6167
|
|
|
¥15.0516
|
|
|
查看
|
|
|
¥16.7127
|
|
|
¥16.4641
|
|
|
¥16.046
|
|
|
¥14.7239
|
|
最低: 1
倍数: 1
:
2,000
|
|
|
|
|
栅极驱动器 600-V 50m? GaN with integrated driver an A 595-LMG3411R050RWHR
- LMG3411R050RWHT
- Texas Instruments
-
1:
¥265.1093
-
37库存量
|
Mouser 零件编号
595-LMG3411R050RWHT
|
Texas Instruments
|
栅极驱动器 600-V 50m? GaN with integrated driver an A 595-LMG3411R050RWHR
|
|
37库存量
|
|
|
¥265.1093
|
|
|
¥214.6435
|
|
|
¥201.9875
|
|
|
¥188.0094
|
|
|
¥176.2687
|
|
|
查看
|
|
|
¥176.1896
|
|
|
报价
|
|
最低: 1
倍数: 1
:
250
|
|
|
|
|
GaN 场效应晶体管 700 V, 270 mOhm typ., 6 A, e-mode PowerGaN transistor
- SGT350R70GTK
- STMicroelectronics
-
1:
¥23.165
-
637库存量
-
新产品
|
Mouser 零件编号
511-SGT350R70GTK
新产品
|
STMicroelectronics
|
GaN 场效应晶体管 700 V, 270 mOhm typ., 6 A, e-mode PowerGaN transistor
|
|
637库存量
|
|
|
¥23.165
|
|
|
¥14.9725
|
|
|
¥10.2604
|
|
|
¥8.2377
|
|
|
¥6.8817
|
|
|
查看
|
|
|
¥7.6953
|
|
|
¥6.2828
|
|
最低: 1
倍数: 1
:
2,500
|
|
|
|
|
栅极驱动器 650V 170mohm GaN FET with integrated dri
- LMG3624YREQR
- Texas Instruments
-
1:
¥62.8845
-
1,600库存量
-
新产品
|
Mouser 零件编号
595-LMG3624YREQR
新产品
|
Texas Instruments
|
栅极驱动器 650V 170mohm GaN FET with integrated dri
|
|
1,600库存量
|
|
|
¥62.8845
|
|
|
¥45.3356
|
|
|
¥43.6067
|
|
|
¥35.7871
|
|
|
查看
|
|
|
¥28.7472
|
|
|
¥34.8266
|
|
|
¥33.8774
|
|
|
¥33.6966
|
|
|
¥28.7472
|
|
最低: 1
倍数: 1
:
2,000
|
|
|
|
|
GaN 场效应晶体管 CoolGaN Transistor 700 V G5
- IGD70R200D2SAUMA1
- Infineon Technologies
-
1:
¥19.9332
-
1,964库存量
-
新产品
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Mouser 零件编号
726-IGD70R200D2SAUMA
新产品
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Infineon Technologies
|
GaN 场效应晶体管 CoolGaN Transistor 700 V G5
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1,964库存量
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¥19.9332
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¥12.8255
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|
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¥8.6897
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¥6.9269
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¥5.7517
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查看
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¥6.3732
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|
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¥5.1867
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¥5.1076
|
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最低: 1
倍数: 1
:
2,500
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