GaN 半导体

栅极驱动器 High voltage and high-speed half-bridge gate driver for GaN power switches

GaN 场效应晶体管 100 V eGaN FET, 2 mohm Rdson, 3.23 mm x 2.88 mm, Cu pillar CSP

GaN 场效应晶体管 140 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode

GaN 场效应晶体管 500 mohm / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode

GaN 场效应晶体管 GaN FET, 700V, 75m, DPAK

GaN 场效应晶体管 GaN FET, 700V,101m, 8x8

栅极驱动器 600-V 150-m? GaN wit h integrated driver A 595-LMG3410R150RWHR

栅极驱动器 600-V 50m? GaN with integrated driver an A 595-LMG3411R050RWHR

GaN 场效应晶体管 700 V, 138 mOhm typ., 11.5 A, e-mode PowerGaN transistor

GaN 场效应晶体管 700 V, 270 mOhm typ., 6 A, e-mode PowerGaN transistor

栅极驱动器 650V 170mohm GaN FET with integrated dri

GaN 场效应晶体管 GaN FET, 700V, 132m, DPAK