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Micro Commercial Components (MCC) SICW0x 1200V SiC N沟道MOSFET
Micro Commercial Components (MCC) SICW0x 1200V SiC N沟道MOSFET
09/03/2024
采用多功能TO-247-4、TO-247-4L和TO-247AB封装，可提高性能。
Micro Commercial Components (MCC) DC Fast Charging Solutions
Micro Commercial Components (MCC) DC Fast Charging Solutions
08/01/2024
Supports EVs with high-performance components designed for speed, safety, and system efficiency.
Micro Commercial Components (MCC) SICW028N120A4 1200V SiC MOSFET
Micro Commercial Components (MCC) SICW028N120A4 1200V SiC MOSFET
03/21/2024
Designed with a 28mΩ low on-resistance and comes in a TO-247-4 package with a Kelvin source pin.
Micro Commercial Components (MCC) SICW400N170A 1700V SiC MOSFET
Micro Commercial Components (MCC) SICW400N170A 1700V SiC MOSFET
03/19/2024
Features ultra-low on-resistance of only 400mΩ and high blocking voltage capability.
Micro Commercial Components (MCC) 1200V SiC N-Channel MOSFET
Micro Commercial Components (MCC) 1200V SiC N-Channel MOSFET
11/16/2022
High switching frequency and high blocking voltage with low on-resistance and avalanche capability.
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Vishay MXP075 MaxSiC® 750V N沟道MOSFET
Vishay MXP075 MaxSiC® 750V N沟道MOSFET
06/19/2026
具有750V漏源电压、快速开关速度以及小于3μs的短路耐受时间。
Navitas Semiconductor 3300V & 2300V Silicon Carbide (SiC) MOSFETs
Navitas Semiconductor 3300V & 2300V Silicon Carbide (SiC) MOSFETs
06/18/2026
Based on latest GeneSiC™ trench-assisted planar (TAP) technology, offers flexible packaging formats.
Infineon Technologies CoolSiC™车规级750V G2 MOSFET
Infineon Technologies CoolSiC™车规级750V G2 MOSFET
12/19/2025
专为满足电动汽车 (EV) 应用的严格要求而设计。
onsemi NxT2023N065M3S EliteSiC MOSFET
onsemi NxT2023N065M3S EliteSiC MOSFET
12/04/2025
具有低有效输出电容和超低栅极电荷特性。
Central Semiconductor 1700V N沟道碳化硅（SiC）MOSFET
Central Semiconductor 1700V N沟道碳化硅（SiC）MOSFET
11/20/2025
These MOSFETS are designed for high-speed switching and fast reverse recovery applications.
ROHM Semiconductor 750V N沟道SiC MOSFET
ROHM Semiconductor 750V N沟道SiC MOSFET
10/17/2025
这款设备可提升开关频率，减少所需的电容器、电抗器以及其他组件。
Infineon Technologies CoolSiC™ 1400V SiC G2 MOSFET
Infineon Technologies CoolSiC™ 1400V SiC G2 MOSFET
10/09/2025
具有更好的热性能、更高的功率密度和更高的可靠性。
Microchip Technology 1200V SiC MOSFET
Microchip Technology 1200V SiC MOSFET
09/25/2025
MOSFET解决方案更轻、更紧凑，且具有高效率和快速的切换速度。
IXYS IXSxNxL2Kx碳化硅 (SiC) MOSFET
IXYS IXSxNxL2Kx碳化硅 (SiC) MOSFET
09/19/2025
这些器件具有高阻断电压和低导通电阻[RDS(ON)]。
IXYS IXSJxN120R1K 1200V SiC功率MOSFET
IXYS IXSJxN120R1K 1200V SiC功率MOSFET
08/27/2025
高达1200V的阻断电压，具有18mΩ或36mΩ低RDS(on) 。
ROHM Semiconductor SCT2H12NWB 1700V N沟道SiC功率MOSFET
ROHM Semiconductor SCT2H12NWB 1700V N沟道SiC功率MOSFET
08/21/2025
一款额定漏源电压 (VDSS) 为1700V、额定漏极连续电流 (ID) 为3.9A的SiC MOSFET。
onsemi NXVF6532M3TG01 650V EliteSiC H桥功率MOSFET
onsemi NXVF6532M3TG01 650V EliteSiC H桥功率MOSFET
08/08/2025
具备卓越的效率、快速开关能力和强大的热性能。
ROHM Semiconductor SCT40xKWA N沟道SiC功率MOSFET
ROHM Semiconductor SCT40xKWA N沟道SiC功率MOSFET
07/14/2025
具备1200V VDS、低导通电阻、快速开关速度以及快速恢复时间。
Littelfuse IXSJxN120R1 1200 V SiC功率MOSFET
Littelfuse IXSJxN120R1 1200 V SiC功率MOSFET
06/23/2025
专为要求苛刻的电源转换应用而设计的高性能器件。
Infineon Technologies CoolSiC™ 750V G2碳化硅MOSFET
Infineon Technologies CoolSiC™ 750V G2碳化硅MOSFET
06/03/2025
汽车级和工业级MOSFET，最大漏极-源极导通电阻高达78mΩ。
onsemi NVBG050N170M1碳化矽（SiC）MOSFET
onsemi NVBG050N170M1碳化矽（SiC）MOSFET
05/22/2025
最大76mΩ，在20V最大RDS(ON) 和1700V漏极至源极电压时。
APC-E Silicon Carbide (SiC) MOSFETs
APC-E Silicon Carbide (SiC) MOSFETs
05/06/2025
Delivers high power, high frequency, and unmatched performance for demanding applications.
Wolfspeed 1700V碳化硅MOSFET
Wolfspeed 1700V碳化硅MOSFET
04/17/2025
为下一代电源转换提供更高的开关、系统效率和功率密度。
IXYS IXSA40N120L2-7 SiC MOSFET
IXYS IXSA40N120L2-7 SiC MOSFET
03/06/2025
单开关MOSFET，设有1200V、80mΩ 、41A工业级器件，采用TO263-7L封装。
IXYS IXSA80N120L2-7 SiC MOSFET
IXYS IXSA80N120L2-7 SiC MOSFET
03/06/2025
采用TO263-7L封装的1200V、30mΩ、79A工业级器件的单开关MOSFET。
onsemi NTBL032N065M3S碳化矽（SiC）MOSFET
onsemi NTBL032N065M3S碳化矽（SiC）MOSFET
02/20/2025
专为快速开关应用而设计，性能可靠。
onsemi NVH4L050N170M1碳化矽（SiC）MOSFET
onsemi NVH4L050N170M1碳化矽（SiC）MOSFET
02/20/2025
在VGS = 20V时，典型RDS(on)为53mΩ，性能卓越。
Central Semiconductor CDMS24783-120 N-Channel SiC MOSFET
Central Semiconductor CDMS24783-120 N-Channel SiC MOSFET
02/18/2025
Offers a 1200V drain-source voltage for high-speed switching and fast reverse recovery applications
IXYS IXSH40N120L2KHV SiC MOSFET
IXYS IXSH40N120L2KHV SiC MOSFET
02/18/2025
1200V、80mΩ和41A MOSFET，建议用于工业开关模式电源。
IXYS IXSH80N120L2KHV SiC MOSFET
IXYS IXSH80N120L2KHV SiC MOSFET
02/18/2025
1200V、30mΩ和79A MOSFET，建议用于工业开关模式电源。
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