Multilayer High Q Capacitors

Johanson Technology Multilayer High-Q Capacitors were designed for high Q and microwave applications. The S Series High-Q capacitors offer ultra-high Q performance and NPO temperature characteristics. The L Series High-Q capacitors offer mid-high Q performance and NPO temperature characteristics. The Johanson Technology multilayer High Q Capacitors series have a capacitance range from 0.1pF to 10,000pF.

结果: 41
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 系列 封装
Johanson Technology QEDB501Q181J3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 500V 180pF 5% Ni/Sn
15,689预期 2026/12/28
剪切带
¥25.877
¥18.758
¥16.2381
¥14.3284
卷轴
¥11.2887
最低: 1
倍数: 1
: 2,000
E Reel, Cut Tape
Johanson Technology QSCT251Q3R3A1GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 0805 Hi-Q NP0/C0G 250V 3.3pF 0.05pF Ni/Sn
3,500预期 2026/12/15
剪切带
¥15.1985
¥10.5994
¥7.7857
¥6.5201
卷轴
¥5.3788
最低: 1
倍数: 1
: 4,000
S Reel, Cut Tape
Johanson Technology QEDB102Q100J3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 10pF 5% Ni/Sn
E Reel
Johanson Technology QEDB102Q101J3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 1pF 5% Ni/Sn
E Reel
Johanson Technology QEDB102Q120J3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 12pF 5% Ni/Sn
E Reel
Johanson Technology QEDB102Q150J3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 15pF 5% Ni/Sn
E Reel
Johanson Technology QEDB102Q180J3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 18pF 5% Ni/Sn
E Reel
Johanson Technology QEDB102Q1R0B3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 1pF 0.1pF Ni/Sn
E Reel
Johanson Technology QEDB102Q200J3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 20pF 5% Ni/Sn
E Reel
Johanson Technology QEDB102Q270J3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 27pF 5% Ni/Sn
E Reel
Johanson Technology QEDB102Q330J3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 33pF 5% Ni/Sn
E Reel
Johanson Technology QEDB102Q3R9B3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 3.9pF 0.1pF Ni/Sn
E Reel
Johanson Technology QEDB102Q470J3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 47pF 5% Ni/Sn
E Reel
Johanson Technology QEDB102Q4R7B3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 4.7pF 0.1pF Ni/Sn
E Reel
Johanson Technology QEDB102Q560J3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 56pF 5% Ni/Sn
E Reel
Johanson Technology QEDB102Q680J3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 68pF 5% Ni/Sn
E Reel
Johanson Technology QEDB102Q6R8C3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 6.8pF 0.25pF Ni/Sn
E Reel
Johanson Technology QEDB102Q7R5C3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 7.5pF 0.25pF Ni/Sn
E Reel
Johanson Technology QEDB102Q820J3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 82pF 5% Ni/Sn
E Reel
Johanson Technology QEDB102Q8R2C3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 8.2pF 0.25pF Ni/Sn
E Reel
Johanson Technology QEDB102Q9R1C3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 1000V 9.1pF 0.25pF Ni/Sn
E Reel
Johanson Technology QEDB301Q121J3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 300V 120pF 5% Ni/Sn
E Reel
Johanson Technology QEDB500Q102J3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 50V 10pF 5% Ni/Sn
E Reel
Johanson Technology QEDB501Q151J3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 500V 150pF 5% Ni/Sn
E Reel
Johanson Technology QEDB501Q221J3GV001E
Johanson Technology 基于硅的射频电容器/薄膜电容器 1111 Hi-Q NP0/C0G 500V 220pF 5% Ni/Sn
E Reel