|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V
- MRF300BN
- NXP Semiconductors
-
1:
¥795.6556
-
交货期 53 周
-
寿命结束
|
Mouser 零件编号
771-MRF300BN
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V
|
|
交货期 53 周
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
30 A
|
133 V
|
1.8 MHz to 250 MHz
|
20.4 dB
|
330 W
|
- 40 C
|
+ 150 C
|
Through Hole
|
TO-247-3
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 136-941 MHz, 7 W, 7.5 V
- AFT09MS007NT1
- NXP Semiconductors
-
1:
¥66.8734
-
交货期 53 周
-
寿命结束
|
Mouser 零件编号
841-AFT09MS007NT1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 136-941 MHz, 7 W, 7.5 V
|
|
交货期 53 周
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
N-Channel
|
Si
|
3 A
|
30 V
|
136 MHz to 941 MHz
|
15.2 dB
|
7.3 W
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
PLD-1.5
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast Wideband RF Power LDMOS Transistor, 764-941 MHz, 31 W, 13.6 V
- AFT09MS031GNR1
- NXP Semiconductors
-
1:
¥286.5228
-
无库存交货期 53 周
-
寿命结束
|
Mouser 零件编号
841-AFT09MS031GNR1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast Wideband RF Power LDMOS Transistor, 764-941 MHz, 31 W, 13.6 V
|
|
无库存交货期 53 周
|
|
最低： 1
倍数： 1
:
500
|
|
|
N-Channel
|
Si
|
10 A
|
40 V
|
764 MHz to 941 MHz
|
15.7 dB
|
32 W
|
- 40 C
|
+ 150 C
|
SMD/SMT
|
TO-270-2
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Lateral N-Channel Broadband RF Power MOSFET, 520 MHz, 8 W, 12.5 V
- MRF1518NT1
- NXP Semiconductors
-
1:
¥128.707
-
无库存交货期 53 周
-
寿命结束
|
Mouser 零件编号
841-MRF1518NT1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Lateral N-Channel Broadband RF Power MOSFET, 520 MHz, 8 W, 12.5 V
|
|
无库存交货期 53 周
|
|
最低： 1
倍数： 1
:
1,000
|
|
|
N-Channel
|
Si
|
4 A
|
40 V
|
520 MHz
|
13 dB
|
8 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PLD-1.5
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V
- MRF6V12250HR5
- NXP Semiconductors
-
1:
¥6,244.4817
-
无库存交货期 53 周
-
寿命结束
|
Mouser 零件编号
841-MRF6V12250HR5
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V
|
|
无库存交货期 53 周
|
|
最低： 1
倍数： 1
:
50
|
|
|
N-Channel
|
Si
|
|
100 V
|
960 MHz to 1.215 GHz
|
20.3 dB
|
275 W
|
|
+ 150 C
|
Screw Mount
|
NI-780
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V
- MRF6V12500HR5
- NXP Semiconductors
-
1:
¥8,068.0305
-
无库存交货期 53 周
-
寿命结束
|
Mouser 零件编号
841-MRF6V12500HR5
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V
|
|
无库存交货期 53 周
|
|
最低： 1
倍数： 1
:
50
|
|
|
N-Channel
|
Si
|
|
110 V
|
1.215 MHz to 960 MHz
|
19.7 dB
|
500 W
|
|
+ 150 C
|
Screw Mount
|
NI-780H-2
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V
- MRFE6VP5600HR5
- NXP Semiconductors
-
1:
¥4,392.1857
-
无库存交货期 53 周
-
寿命结束
|
Mouser 零件编号
841-MRFE6VP5600HR5
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V
|
|
无库存交货期 53 周
|
|
最低： 1
倍数： 1
:
50
|
|
|
N-Channel
|
Si
|
2 A
|
130 V
|
1.8 MHz to 600 MHz
|
25 dB
|
600 W
|
|
+ 150 C
|
SMD/SMT
|
NI-1230
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Lateral N-Channel Broadband RF Power MOSFET, 965-1215 MHz, 1000 W, 50 V
NXP Semiconductors MRF6VP121KHR5
- MRF6VP121KHR5
- NXP Semiconductors
-
1:
¥8,017.0788
-
无库存交货期 53 周
-
寿命结束
|
Mouser 零件编号
841-MRF6VP121KHR5
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Lateral N-Channel Broadband RF Power MOSFET, 965-1215 MHz, 1000 W, 50 V
|
|
无库存交货期 53 周
|
|
最低： 1
倍数： 1
:
50
|
|
|
N-Channel
|
Si
|
|
110 V
|
|
20 dB
|
1 kW
|
|
+ 150 C
|
Screw Mount
|
NI-1230-4
|
Reel, Cut Tape
|
|
