|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-400MHz 30Watts 28Volt Gain 13dB
- MRF137
- MACOM
-
1:
¥931.1313
-
233库存量
-
200预期 2027/2/16
|
Mouser 零件编号
937-MRF137
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-400MHz 30Watts 28Volt Gain 13dB
|
|
233库存量
200预期 2027/2/16
|
|
|
¥931.1313
|
|
|
¥774.5472
|
|
|
¥705.4816
|
|
最低: 1
倍数: 1
|
|
RF MOSFET Transistors
|
SMD/SMT
|
211-07-3
|
|
Si
|
400 MHz
|
30 W
|
- 65 C
|
+ 150 C
|
13 dB
|
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-175MHz 300Watts 28Volt Gain 12dB
- MRF141G
- MACOM
-
1:
¥4,846.4118
-
38库存量
|
Mouser 零件编号
937-MRF141G
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-175MHz 300Watts 28Volt Gain 12dB
|
|
38库存量
|
|
|
¥4,846.4118
|
|
|
¥4,191.2152
|
|
最低: 1
倍数: 1
|
|
RF MOSFET Transistors
|
SMD/SMT
|
375-04
|
|
Si
|
175 MHz
|
300 W
|
- 65 C
|
+ 150 C
|
12 dB
|
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-175MHz 30Watts 50Volt Gain 18dB
- MRF148A
- MACOM
-
1:
¥1,453.406
-
926库存量
|
Mouser 零件编号
937-MRF148A
|
MACOM
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 5-175MHz 30Watts 50Volt Gain 18dB
|
|
926库存量
|
|
|
¥1,453.406
|
|
|
¥1,192.5116
|
|
|
¥1,157.4477
|
|
最低: 1
倍数: 1
|
|
RF MOSFET Transistors
|
SMD/SMT
|
211-07-3
|
|
Si
|
175 MHz
|
30 W
|
- 65 C
|
+ 150 C
|
18 dB
|
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 ART2K0FES/SOT539/TRAY
- ART2K0FESU
- Ampleon
-
1:
¥2,297.7646
-
430库存量
-
Mouser 的新产品
|
Mouser 零件编号
94-ART2K0FESU
Mouser 的新产品
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 ART2K0FES/SOT539/TRAY
|
|
430库存量
|
|
|
¥2,297.7646
|
|
|
¥1,912.5589
|
|
|
¥1,876.6588
|
|
最低: 1
倍数: 1
|
|
RF MOSFETs
|
SMD/SMT
|
SOT539BN-5
|
|
LDMOS
|
1 MHz to 400 MHz
|
2 kW
|
|
+ 225 C
|
28.4 dB
|
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 B11G2327N71D/PQFN-12x7/REELDP
- B11G2327N71DYZ
- Ampleon
-
1:
¥576.6164
-
303库存量
-
Mouser 的新产品
|
Mouser 零件编号
94-B11G2327N71DYZ
Mouser 的新产品
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 B11G2327N71D/PQFN-12x7/REELDP
|
|
303库存量
|
|
|
¥576.6164
|
|
|
¥477.6849
|
|
|
¥453.6159
|
|
|
¥451.1299
|
|
|
¥429.626
|
|
最低: 1
倍数: 1
:
300
|
|
RF MOSFETs
|
SMD/SMT
|
QFN-36
|
|
LDMOS
|
2.3 GHz to 2.7 GHz
|
49.5 dBm
|
|
+ 200 C
|
33.5 dB
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLC2425M10LS500P/SOT1250/TRAYD
- BLC2425M10LS500PZ
- Ampleon
-
1:
¥1,874.0146
-
105库存量
-
Mouser 的新产品
|
Mouser 零件编号
94-BLC2425M10LS500PZ
Mouser 的新产品
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLC2425M10LS500P/SOT1250/TRAYD
|
|
105库存量
|
|
|
¥1,874.0146
|
|
|
¥1,550.0097
|
|
|
¥1,508.4935
|
|
最低: 1
倍数: 1
|
|
RF MOSFETs
|
SMD/SMT
|
SOT1250-1-5
|
|
LDMOS
|
2.4 GHz to 2.5 GHz
|
500 W
|
|
+ 225 C
|
14.5 dB
|
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLF647P/SOT1121/TRAY
- BLF647P,112
- Ampleon
-
1:
¥1,876.9074
-
183库存量
-
Mouser 的新产品
|
Mouser 零件编号
94-BLF647P112
Mouser 的新产品
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLF647P/SOT1121/TRAY
|
|
183库存量
|
|
|
¥1,876.9074
|
|
|
¥1,605.3571
|
|
|
¥1,564.824
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
RF MOSFET Transistors
|
SMD/SMT
|
SOT-1121A-5
|
|
LDMOS
|
1.5 GHz
|
200 W
|
|
+ 225 C
|
18 dB
|
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLP15M9S100G/TO270/REEL
- BLP15M9S100GZ
- Ampleon
-
1:
¥226.3955
-
940库存量
-
Mouser 的新产品
|
Mouser 零件编号
94-BLP15M9S100GZ
Mouser 的新产品
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLP15M9S100G/TO270/REEL
|
|
940库存量
|
|
|
¥226.3955
|
|
|
¥182.3933
|
|
|
¥171.3871
|
|
|
¥164.6862
|
|
|
¥159.556
|
|
|
¥155.0134
|
|
最低: 1
倍数: 1
:
500
|
|
RF MOSFETs
|
SMD/SMT
|
TO-270-2G-1-3
|
|
LDMOS
|
1.5 GHz
|
100 W
|
|
+ 225 C
|
16 dB
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLP9G0722-20G/SOT1483/REELDP
- BLP9G0722-20GZ
- Ampleon
-
1:
¥166.7541
-
1,353库存量
-
Mouser 的新产品
|
Mouser 零件编号
94-BLP9G0722-20GZ
Mouser 的新产品
|
Ampleon
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 BLP9G0722-20G/SOT1483/REELDP
|
|
1,353库存量
|
|
|
¥166.7541
|
|
|
¥133.0914
|
|
|
¥124.6503
|
|
|
¥117.9494
|
|
|
¥115.3052
|
|
|
¥111.6666
|
|
最低: 1
倍数: 1
:
500
|
|
RF MOSFETs
|
SMD/SMT
|
SOT1483-1-3
|
|
LDMOS
|
100 MHz to 2.7 GHz
|
20 W
|
|
+ 225 C
|
19 dB
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频(RF)双极晶体管 NPN Silicon RF Transistor
- BFR 360L3 E6765
- Infineon Technologies
-
1:
¥2.5651
-
23,646库存量
-
寿命结束
|
Mouser 零件编号
726-BFR360L3E6765
寿命结束
|
Infineon Technologies
|
射频(RF)双极晶体管 NPN Silicon RF Transistor
|
|
23,646库存量
|
|
|
¥2.5651
|
|
|
¥1.582
|
|
|
¥1.2543
|
|
|
¥1.1865
|
|
|
查看
|
|
|
¥1.03395
|
|
|
¥1.1413
|
|
|
¥1.10062
|
|
|
¥1.03395
|
|
|
¥1.03395
|
|
最低: 1
倍数: 1
:
15,000
|
|
RF Bipolar Transistors
|
SMD/SMT
|
TSLP
|
Bipolar
|
Si
|
14 GHz
|
|
- 65 C
|
+ 150 C
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频(RF)双极晶体管 NPN Silicn Germanium RF Transistor
- BFR740L3RHE6327XTSA1
- Infineon Technologies
-
1:
¥6.78
-
5,486库存量
-
寿命结束
|
Mouser 零件编号
726-BFR740L3RHE6327X
寿命结束
|
Infineon Technologies
|
射频(RF)双极晶体管 NPN Silicn Germanium RF Transistor
|
|
5,486库存量
|
|
|
¥6.78
|
|
|
¥4.3618
|
|
|
¥3.5821
|
|
|
¥3.4239
|
|
|
查看
|
|
|
¥3.1075
|
|
|
¥3.3335
|
|
|
¥3.3222
|
|
|
¥3.1075
|
|
|
¥3.1075
|
|
最低: 1
倍数: 1
:
15,000
|
|
RF Bipolar Transistors
|
SMD/SMT
|
TSLP-3
|
Bipolar
|
SiGe
|
40 GHz
|
|
|
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband Airfast RF Power LDMOS Transistor, 136-941 MHz, 7 W, 7.5 V
- AFM907NT1
- NXP Semiconductors
-
1:
¥41.2563
-
16,990库存量
-
寿命结束
|
Mouser 零件编号
841-AFM907NT1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband Airfast RF Power LDMOS Transistor, 136-941 MHz, 7 W, 7.5 V
|
|
16,990库存量
|
|
|
¥41.2563
|
|
|
¥31.3575
|
|
|
¥28.8376
|
|
|
¥26.0578
|
|
|
¥23.278
|
|
|
查看
|
|
|
¥24.747
|
|
|
¥23.9673
|
|
|
¥22.8373
|
|
最低: 1
倍数: 1
:
1,000
|
|
RF MOSFET Transistors
|
SMD/SMT
|
DFN-16
|
|
Si
|
136 MHz to 941 MHz
|
8 W
|
- 40 C
|
+ 150 C
|
15 dB
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast Broadband RF Power LDMOS Transistor, 136-520 MHz, 70 W, 12.5 V
- AFT05MP075NR1
- NXP Semiconductors
-
1:
¥395.7034
-
516库存量
-
寿命结束
|
Mouser 零件编号
841-AFT05MP075NR1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast Broadband RF Power LDMOS Transistor, 136-520 MHz, 70 W, 12.5 V
|
|
516库存量
|
|
|
¥395.7034
|
|
|
¥321.9596
|
|
|
¥302.1507
|
|
|
¥298.0714
|
|
|
查看
|
|
|
¥267.9343
|
|
|
¥282.7034
|
|
|
¥279.6637
|
|
|
¥267.9343
|
|
|
报价
|
|
最低: 1
倍数: 1
:
500
|
|
RF MOSFET Transistors
|
SMD/SMT
|
TO-270-WB-4
|
|
Si
|
136 MHz to 520 MHz
|
70 W
|
- 40 C
|
+ 150 C
|
18.5 dB
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 136-941 MHz, 4 W, 7.5 V
- AFT05MS004NT1
- NXP Semiconductors
-
1:
¥34.0356
-
18,323库存量
-
11,000预期 2026/12/7
-
寿命结束
|
Mouser 零件编号
841-AFT05MS004NT1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 136-941 MHz, 4 W, 7.5 V
|
|
18,323库存量
11,000预期 2026/12/7
|
|
|
¥34.0356
|
|
|
¥25.6171
|
|
|
¥23.5379
|
|
|
¥21.2779
|
|
|
¥18.8484
|
|
|
查看
|
|
|
¥20.1479
|
|
|
¥19.4586
|
|
|
¥18.4077
|
|
最低: 1
倍数: 1
:
1,000
|
|
RF MOSFET Transistors
|
SMD/SMT
|
SOT-89-3
|
|
Si
|
136 MHz to 941 MHz
|
4.9 W
|
- 40 C
|
+ 150 C
|
20.9 dB
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast Wideband RF Power LDMOS Transistor, 136-520 MHz, 31 W, 13.6 V
- AFT05MS031GNR1
- NXP Semiconductors
-
1:
¥260.5554
-
2,030库存量
-
2,000在途量
-
寿命结束
|
Mouser 零件编号
841-AFT05MS031GNR1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast Wideband RF Power LDMOS Transistor, 136-520 MHz, 31 W, 13.6 V
|
|
2,030库存量
2,000在途量
|
|
|
¥260.5554
|
|
|
¥209.9201
|
|
|
¥196.281
|
|
|
¥193.3317
|
|
|
查看
|
|
|
¥172.7431
|
|
|
¥182.9131
|
|
|
¥177.2631
|
|
|
¥172.7431
|
|
|
报价
|
|
最低: 1
倍数: 1
:
500
|
|
RF MOSFET Transistors
|
SMD/SMT
|
TO-270-2
|
|
Si
|
136 MHz to 520 MHz
|
33 W
|
- 40 C
|
+ 150 C
|
17.7 dB
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 136-941 MHz, 7 W, 7.5 V
- AFT09MS007NT1
- NXP Semiconductors
-
1:
¥66.8734
-
交货期 15 周
-
寿命结束
|
Mouser 零件编号
841-AFT09MS007NT1
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistor, 136-941 MHz, 7 W, 7.5 V
|
|
交货期 15 周
|
|
|
¥66.8734
|
|
|
¥51.2455
|
|
|
¥44.2056
|
|
|
¥41.0755
|
|
|
¥32.4875
|
|
|
查看
|
|
|
¥38.3861
|
|
|
¥36.1261
|
|
|
¥34.1373
|
|
|
¥31.7869
|
|
最低: 1
倍数: 1
:
1,000
|
|
RF MOSFET Transistors
|
SMD/SMT
|
PLD-1.5
|
|
Si
|
136 MHz to 941 MHz
|
7.3 W
|
- 40 C
|
+ 150 C
|
15.2 dB
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V
- MRF1K50NR5
- NXP Semiconductors
-
1:
¥3,106.7768
-
28库存量
-
寿命结束
|
Mouser 零件编号
841-MRF1K50NR5
寿命结束
|
NXP Semiconductors
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Wideband RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V
|
|
28库存量
|
|
|
¥3,106.7768
|
|
|
¥2,682.1567
|
|
|
¥2,576.1175
|
|
|
¥2,512.1934
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
:
50
|
|
RF MOSFET Transistors
|
SMD/SMT
|
OM-1230-4
|
|
Si
|
1.8 MHz to 500 MHz
|
1.5 kW
|
- 40 C
|
+ 150 C
|
23 dB
|
|
Reel, Cut Tape
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF POWER transistor LDMOST family N-Chan
- PD55003L-E
- STMicroelectronics
-
1:
¥64.8507
-
1,627库存量
-
3,000预期 2026/9/15
|
Mouser 零件编号
511-PD55003L-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF POWER transistor LDMOST family N-Chan
|
|
1,627库存量
3,000预期 2026/9/15
|
|
|
¥64.8507
|
|
|
¥46.5673
|
|
|
¥41.7761
|
|
|
¥39.5387
|
|
|
¥39.5387
|
|
最低: 1
倍数: 1
:
3,000
|
|
RF MOSFET Transistors
|
SMD/SMT
|
PowerFLAT (5x5)
|
|
Si
|
1 GHz
|
3 W
|
- 65 C
|
+ 150 C
|
17 dB
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.
- PD55003TR-E
- STMicroelectronics
-
1:
¥74.5235
-
288库存量
|
Mouser 零件编号
511-PD55003TR-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.
|
|
288库存量
|
|
|
¥74.5235
|
|
|
¥53.7654
|
|
|
¥48.7143
|
|
|
¥45.4938
|
|
最低: 1
倍数: 1
:
600
|
|
RF MOSFET Transistors
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
|
Si
|
1 GHz
|
3 W
|
- 65 C
|
+ 150 C
|
17 dB
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.
- PD55008TR-E
- STMicroelectronics
-
1:
¥128.707
-
449库存量
|
Mouser 零件编号
511-PD55008TR-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.
|
|
449库存量
|
|
|
¥128.707
|
|
|
¥95.1234
|
|
|
¥81.6425
|
|
|
¥78.5802
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
:
600
|
|
RF MOSFET Transistors
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
|
Si
|
1 GHz
|
8 W
|
- 65 C
|
+ 150 C
|
17 dB
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
- PD55015-E
- STMicroelectronics
-
1:
¥192.3147
-
137库存量
|
Mouser 零件编号
511-PD55015-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
|
|
137库存量
|
|
|
¥192.3147
|
|
|
¥138.877
|
|
|
¥130.5263
|
|
最低: 1
倍数: 1
|
|
RF MOSFET Transistors
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
|
Si
|
1 GHz
|
15 W
|
- 65 C
|
+ 150 C
|
14 dB
|
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
- PD55025S-E
- STMicroelectronics
-
1:
¥263.7759
-
112库存量
|
Mouser 零件编号
511-PD55025S-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
|
|
112库存量
|
|
|
¥263.7759
|
|
|
¥193.3882
|
|
|
¥184.2126
|
|
|
¥174.9466
|
|
最低: 1
倍数: 1
|
|
RF MOSFET Transistors
|
SMD/SMT
|
PowerSO-10RF-Straight-4
|
|
Si
|
1 GHz
|
25 W
|
- 65 C
|
+ 150 C
|
14.5 dB
|
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
- PD57018-E
- STMicroelectronics
-
1:
¥257.9903
-
487库存量
|
Mouser 零件编号
511-PD57018-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
|
|
487库存量
|
|
|
¥257.9903
|
|
|
¥188.9247
|
|
|
¥179.7378
|
|
最低: 1
倍数: 1
|
|
RF MOSFET Transistors
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
|
Si
|
1 GHz
|
18 W
|
- 65 C
|
+ 150 C
|
16.5 dB
|
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Pwr Transistors LDMOST Plastic Fam
- PD57060-E
- STMicroelectronics
-
1:
¥529.1338
-
305库存量
|
Mouser 零件编号
511-PD57060-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Pwr Transistors LDMOST Plastic Fam
|
|
305库存量
|
|
|
¥529.1338
|
|
|
¥400.5963
|
|
|
¥396.9577
|
|
|
报价
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
RF MOSFET Transistors
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
|
Si
|
1 GHz
|
60 W
|
- 65 C
|
+ 150 C
|
14.3 dB
|
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F. N-Ch Trans
- PD85035-E
- STMicroelectronics
-
1:
¥273.2905
-
343库存量
|
Mouser 零件编号
511-PD85035-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F. N-Ch Trans
|
|
343库存量
|
|
|
¥273.2905
|
|
|
¥200.7558
|
|
|
¥191.3994
|
|
最低: 1
倍数: 1
|
|
RF MOSFET Transistors
|
SMD/SMT
|
PowerSO-12
|
|
Si
|
870 MHz
|
35 W
|
- 65 C
|
+ 165 C
|
14.9 dB
|
|
Tube
|
|