|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF POWER TRANS
- PD55008-E
- STMicroelectronics
-
1:
¥144.8321
-
1,322库存量
|
Mouser 零件编号
511-PD55008-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF POWER TRANS
|
|
1,322库存量
|
|
|
¥144.8321
|
|
|
¥103.1464
|
|
|
¥94.2985
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
4 A
|
40 V
|
|
1 GHz
|
17 dB
|
8 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
- PD54008L-E
- STMicroelectronics
-
1:
¥70.7267
-
3,430库存量
|
Mouser 零件编号
511-PD54008L-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
|
|
3,430库存量
|
|
|
¥70.7267
|
|
|
¥50.9517
|
|
|
¥45.991
|
|
|
¥42.8496
|
|
|
¥42.8496
|
|
最低： 1
倍数： 1
:
3,000
|
|
|
N-Channel
|
Si
|
5 A
|
25 V
|
|
1 GHz
|
15 dB
|
8 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerFLAT (5x5)
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF POWER TRANS
- PD55003-E
- STMicroelectronics
-
1:
¥93.8804
-
5,097库存量
|
Mouser 零件编号
511-PD55003-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF POWER TRANS
|
|
5,097库存量
|
|
|
¥93.8804
|
|
|
¥65.3479
|
|
|
¥62.8619
|
|
|
¥58.5679
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
2.5 A
|
40 V
|
|
1 GHz
|
17 dB
|
3 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Pwr Transistors LDMOST Plastic N Ch
- PD54008-E
- STMicroelectronics
-
1:
¥128.707
-
1,533库存量
|
Mouser 零件编号
511-PD54008-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Pwr Transistors LDMOST Plastic N Ch
|
|
1,533库存量
|
|
|
¥128.707
|
|
|
¥91.0667
|
|
|
¥84.2867
|
|
|
¥84.2076
|
|
|
报价
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
5 A
|
25 V
|
|
1 GHz
|
11.5 dB
|
8 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
- PD55015S-E
- STMicroelectronics
-
1:
¥210.2591
-
228库存量
|
Mouser 零件编号
511-PD55015S-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
|
|
228库存量
|
|
|
¥210.2591
|
|
|
¥168.3248
|
|
|
¥145.5779
|
|
|
¥136.2328
|
|
|
报价
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
5 A
|
40 V
|
|
1 GHz
|
14 dB
|
15 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerSO-10RF-Straight-4
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 N-Ch, 12.5V 15W3 Transistor, LDMOST
- PD55015TR-E
- STMicroelectronics
-
1:
¥183.4668
-
573库存量
|
Mouser 零件编号
511-PD55015TR-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 N-Ch, 12.5V 15W3 Transistor, LDMOST
|
|
573库存量
|
|
|
¥183.4668
|
|
|
¥137.7244
|
|
|
¥130.9444
|
|
|
¥122.1756
|
|
最低： 1
倍数： 1
:
600
|
|
|
N-Channel
|
Si
|
5 A
|
40 V
|
|
1 GHz
|
14 dB
|
15 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 HF/VHF/UHF RF N-Ch 300W 15dB 175MHz
- SD2932BW
- STMicroelectronics
-
1:
¥1,805.7739
-
35库存量
|
Mouser 零件编号
511-SD2932BW
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 HF/VHF/UHF RF N-Ch 300W 15dB 175MHz
|
|
35库存量
|
|
|
¥1,805.7739
|
|
|
¥1,423.8678
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
40 A
|
125 V
|
|
250 MHz
|
15 dB
|
300 W
|
|
+ 200 C
|
Screw Mount
|
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor
- RF5L08350CB4
- STMicroelectronics
-
1:
¥1,455.4739
-
110库存量
-
NRND
|
Mouser 零件编号
511-RF5L08350CB4
NRND
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor
|
|
110库存量
|
|
|
¥1,455.4739
|
|
|
¥1,143.7973
|
|
|
¥1,143.7973
|
|
最低： 1
倍数： 1
:
120
|
|
|
N-Channel
|
Si
|
2.5 A
|
110 V
|
1 Ohms
|
1 GHz
|
19 dB
|
400 W
|
|
+ 200 C
|
SMD/SMT
|
B4E-5
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 180 W, 28 V, 1.3 to 1.6 GHz RF power LDMOS transistor
- RF2L16180CB4
- STMicroelectronics
-
1:
¥1,455.4739
-
20库存量
-
NRND
|
Mouser 零件编号
511-RF2L16180CB4
NRND
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 180 W, 28 V, 1.3 to 1.6 GHz RF power LDMOS transistor
|
|
20库存量
|
|
|
¥1,455.4739
|
|
|
¥1,143.7973
|
|
|
¥1,143.7973
|
|
最低： 1
倍数： 1
:
120
|
|
|
N-Channel
|
Si
|
2.5 A
|
65 V
|
1 Ohms
|
1.6 GHz
|
14 dB
|
180 W
|
|
+ 200 C
|
SMD/SMT
|
B4E-5
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 120 W 50 V RF power LDMOS transistor from HF to 1.5 GHz
- RF5L15120CB4
- STMicroelectronics
-
1:
¥1,625.1999
-
18库存量
-
NRND
|
Mouser 零件编号
511-RF5L15120CB4
NRND
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 120 W 50 V RF power LDMOS transistor from HF to 1.5 GHz
|
|
18库存量
|
|
|
¥1,625.1999
|
|
|
¥1,286.8101
|
|
|
¥1,286.8101
|
|
最低： 1
倍数： 1
:
100
|
|
|
Dual N-Channel
|
Si
|
2.5 A
|
95 V
|
1 Ohms
|
1 GHz
|
20 dB
|
120 W
|
|
+ 200 C
|
SMD/SMT
|
LBB-5
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Pwr Transistors LDMOST Plastic N Ch
- PD57030-E
- STMicroelectronics
-
1:
¥412.5065
-
511库存量
|
Mouser 零件编号
511-PD57030-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Pwr Transistors LDMOST Plastic N Ch
|
|
511库存量
|
|
|
¥412.5065
|
|
|
¥308.7838
|
|
|
¥277.0195
|
|
|
报价
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
4 A
|
65 V
|
|
1 GHz
|
14 dB
|
30 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF PWR N-Ch MOS 150W 14dB 175MHz
- SD2931-10W
- STMicroelectronics
-
1:
¥774.5472
-
616库存量
-
950预期 2026/10/2
|
Mouser 零件编号
511-SD2931-10W
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF PWR N-Ch MOS 150W 14dB 175MHz
|
|
616库存量
950预期 2026/10/2
|
|
|
¥774.5472
|
|
|
¥615.3189
|
|
|
¥590.3459
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
20 A
|
125 V
|
|
230 MHz
|
15 dB
|
150 W
|
|
+ 150 C
|
SMD/SMT
|
M174
|
Bulk
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF PWR N-Ch MOS 350W 15dB 175MHz
- SD2942W
- STMicroelectronics
-
1:
¥1,625.2903
-
113库存量
|
Mouser 零件编号
511-SD2942W
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF PWR N-Ch MOS 350W 15dB 175MHz
|
|
113库存量
|
|
|
¥1,625.2903
|
|
|
¥1,305.4212
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
40 A
|
130 V
|
|
175 MHz
|
15 dB
|
350 W
|
|
+ 200 C
|
Screw Mount
|
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.
- PD55003TR-E
- STMicroelectronics
-
1:
¥74.5235
-
288库存量
|
Mouser 零件编号
511-PD55003TR-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.
|
|
288库存量
|
|
|
¥74.5235
|
|
|
¥53.7654
|
|
|
¥48.7143
|
|
|
¥45.4938
|
|
最低： 1
倍数： 1
:
600
|
|
|
N-Channel
|
Si
|
2.5 A
|
40 V
|
|
1 GHz
|
17 dB
|
3 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.
- PD55008TR-E
- STMicroelectronics
-
1:
¥128.707
-
129库存量
|
Mouser 零件编号
511-PD55008TR-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.
|
|
129库存量
|
|
|
¥128.707
|
|
|
¥95.1234
|
|
|
¥84.1172
|
|
最低： 1
倍数： 1
:
600
|
|
|
N-Channel
|
Si
|
4 A
|
40 V
|
|
1 GHz
|
17 dB
|
8 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
- PD55015-E
- STMicroelectronics
-
1:
¥192.3147
-
134库存量
|
Mouser 零件编号
511-PD55015-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
|
|
134库存量
|
|
|
¥192.3147
|
|
|
¥138.877
|
|
|
¥130.5263
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
5 A
|
40 V
|
|
1 GHz
|
14 dB
|
15 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
- PD55025S-E
- STMicroelectronics
-
1:
¥263.7759
-
112库存量
|
Mouser 零件编号
511-PD55025S-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
|
|
112库存量
|
|
|
¥263.7759
|
|
|
¥193.3882
|
|
|
¥184.2126
|
|
|
¥174.9466
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
7 A
|
40 V
|
|
1 GHz
|
14.5 dB
|
25 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerSO-10RF-Straight-4
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
- PD57018-E
- STMicroelectronics
-
1:
¥257.9903
-
461库存量
|
Mouser 零件编号
511-PD57018-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
|
|
461库存量
|
|
|
¥257.9903
|
|
|
¥188.9247
|
|
|
¥179.7378
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
2.5 A
|
65 V
|
760 mOhms
|
1 GHz
|
16.5 dB
|
18 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Pwr Transistors LDMOST Plastic Fam
- PD57060-E
- STMicroelectronics
-
1:
¥529.1338
-
55库存量
-
400预期 2026/10/7
|
Mouser 零件编号
511-PD57060-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Pwr Transistors LDMOST Plastic Fam
|
|
55库存量
400预期 2026/10/7
|
|
|
¥529.1338
|
|
|
¥400.5963
|
|
|
¥396.9577
|
|
|
报价
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
7 A
|
65 V
|
|
1 GHz
|
14.3 dB
|
60 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F. N-Ch Trans
- PD85035-E
- STMicroelectronics
-
1:
¥273.2905
-
343库存量
|
Mouser 零件编号
511-PD85035-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F. N-Ch Trans
|
|
343库存量
|
|
|
¥273.2905
|
|
|
¥200.7558
|
|
|
¥191.3994
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
8 A
|
40 V
|
|
870 MHz
|
14.9 dB
|
35 W
|
- 65 C
|
+ 165 C
|
SMD/SMT
|
PowerSO-12
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF PWR N-Ch MOS 150W 14dB 175MHz
- SD2931-11W
- STMicroelectronics
-
1:
¥708.8716
-
137库存量
-
200预期 2026/10/20
|
Mouser 零件编号
511-SD2931-11W
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF PWR N-Ch MOS 150W 14dB 175MHz
|
|
137库存量
200预期 2026/10/20
|
|
|
¥708.8716
|
|
|
¥561.3162
|
|
|
¥539.4733
|
|
|
报价
|
|
|
报价
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
20 A
|
125 V
|
|
175 MHz
|
14 dB
|
150 W
|
|
+ 200 C
|
Screw Mount
|
|
Bulk
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 N-Ch MOS HF/VHF/ RF 300W 15dB 175MHz
- SD2932W
- STMicroelectronics
-
1:
¥1,676.3211
-
80库存量
|
Mouser 零件编号
511-SD2932W
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 N-Ch MOS HF/VHF/ RF 300W 15dB 175MHz
|
|
80库存量
|
|
|
¥1,676.3211
|
|
|
¥1,377.9672
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
40 A
|
125 V
|
|
250 MHz
|
16 dB
|
300 W
|
|
+ 150 C
|
SMD/SMT
|
M244
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 300W - 50V Moisture Resistnt HF/VHF DMOS
- SD4933MR
- STMicroelectronics
-
1:
¥1,370.1928
-
106库存量
-
300在途量
|
Mouser 零件编号
511-SD4933MR
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 300W - 50V Moisture Resistnt HF/VHF DMOS
|
|
106库存量
300在途量
在途量:
150 预期 2026/10/12
150 预期 2027/9/24
|
|
|
¥1,370.1928
|
|
|
¥1,087.8849
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
40 A
|
200 V
|
|
100 MHz
|
24 dB
|
300 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
M177MR-5
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 300W 50V RF MOS 21dB 175MHz N-Ch
- STAC2942BW
- STMicroelectronics
-
1:
¥1,198.5571
-
102库存量
|
Mouser 零件编号
511-STAC2942BW
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 300W 50V RF MOS 21dB 175MHz N-Ch
|
|
102库存量
|
|
|
¥1,198.5571
|
|
|
¥929.4024
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
40 A
|
130 V
|
|
250 MHz
|
21 dB
|
350 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
STAC244B
|
Bulk
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF POWER transistor LDMOST family N-Chan
- PD54003-E
- STMicroelectronics
-
1:
¥107.9489
-
105库存量
|
Mouser 零件编号
511-PD54003-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF POWER transistor LDMOST family N-Chan
|
|
105库存量
|
|
|
¥107.9489
|
|
|
¥73.6195
|
|
|
¥67.0881
|
|
|
¥56.9859
|
|
|
¥56.50
|
|
最低： 1
倍数： 1
|
|
|
N-Channel
|
Si
|
4 A
|
25 V
|
|
1 GHz
|
12 dB
|
3 W
|
- 65 C
|
+ 150 C
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
Tube
|
|
