半导体类型

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选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS
ROHM Semiconductor 整流器 200V 4A 13ns, TO-277A, Ultra Fast Recovery Diode for Automotive 3,708库存量
最低: 1
倍数: 1
: 4,000

ROHM Semiconductor 整流器 200V 4A 13ns, TO-277A, Ultra Fast Recovery Diode 3,880库存量
最低: 1
倍数: 1
: 4,000

ROHM Semiconductor 整流器 200V 6A 14ns, TO-277A, Ultra Fast Recovery Diode for Automotive 3,960库存量
最低: 1
倍数: 1
: 4,000

ROHM Semiconductor 整流器 200V 6A 14ns, TO-277A, Ultra Fast Recovery Diode 3,980库存量
最低: 1
倍数: 1
: 4,000

ROHM Semiconductor ESD保护二极管/TVS二极管 22V 2500W, Highly Reliable, Transient Voltage Suppressor for Automotive 2,350库存量
最低: 1
倍数: 1
: 2,500

ROHM Semiconductor ESD保护二极管/TVS二极管 24V 2500W, Highly Reliable, Transient Voltage Suppressor for Automotive 4,978库存量
最低: 1
倍数: 1
: 2,500

ROHM Semiconductor 碳化硅肖特基二极管 650V, 10A, SMD, Silicon-carbide (SiC) SBD for Automotive (3-pin package) 964库存量
最低: 1
倍数: 1
: 1,000

ROHM Semiconductor 碳化硅肖特基二极管 1200V, 10A, SMD, Silicon-carbide (SiC) SBD for Automotive (3-pin package) 957库存量
最低: 1
倍数: 1
: 1,000

ROHM Semiconductor 碳化硅肖特基二极管 650V, 20A, SMD, Silicon-carbide (SiC) SBD for Automotive (3-pin package) 800库存量
最低: 1
倍数: 1
: 1,000

ROHM Semiconductor 碳化硅肖特基二极管 650V, 30A, SMD, Silicon-carbide (SiC) SBD for Automotive (3-pin package) 933库存量
最低: 1
倍数: 1
: 1,000

ROHM Semiconductor 肖特基二极管与整流器 Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD for Automotive: The YQ10RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable opera 2,583库存量
最低: 1
倍数: 1
: 4,000

ROHM Semiconductor 肖特基二极管与整流器 Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD: The YQ10RSM10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temp 7,534库存量
最低: 1
倍数: 1
: 4,000

ROHM Semiconductor 肖特基二极管与整流器 RECT 100V 12A SM SKY BARRI 3,950库存量
最低: 1
倍数: 1
: 4,000

ROHM Semiconductor 肖特基二极管与整流器 RECT 100V 12A SM SKY BARRI 3,568库存量
最低: 1
倍数: 1
: 4,000

ROHM Semiconductor 肖特基二极管与整流器 RECT 100V 15A SM SKY BARRI 5,557库存量
最低: 1
倍数: 1
: 4,000

ROHM Semiconductor 肖特基二极管与整流器 RECT 100V 15A SM SKY BARRI 4,095库存量
最低: 1
倍数: 1
: 4,000

ROHM Semiconductor 肖特基二极管与整流器 Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD: The YQ20BGE10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe 4,797库存量
最低: 1
倍数: 1
: 2,500

ROHM Semiconductor 肖特基二极管与整流器 Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD for Automotive: The YQ20BM10SDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operati 4,497库存量
2,500预期 2026/10/26
最低: 1
倍数: 1
: 2,500

ROHM Semiconductor 肖特基二极管与整流器 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat 1,900库存量
最低: 1
倍数: 1
: 1,000

ROHM Semiconductor 肖特基二极管与整流器 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD: The YQ20NL10CD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe 1,970库存量
最低: 1
倍数: 1
: 1,000

ROHM Semiconductor 肖特基二极管与整流器 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat 2,000库存量
最低: 1
倍数: 1
: 1,000

ROHM Semiconductor 肖特基二极管与整流器 Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD: The YQ20NL10SE is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe 1,988库存量
最低: 1
倍数: 1
: 1,000

ROHM Semiconductor 肖特基二极管与整流器 Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD: The YQ30NL10SE is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe 1,886库存量
最低: 1
倍数: 1
: 1,000

ROHM Semiconductor 肖特基二极管与整流器 RECT 100V 3A SM SKY BARRI 3,832库存量
最低: 1
倍数: 1
: 4,000

ROHM Semiconductor 肖特基二极管与整流器 RECT 100V 5A SM SKY BARRI 5,900库存量
最低: 1
倍数: 1
: 3,000