Power MOSFETs

Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.

结果: 1,445
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS
Diodes Incorporated MOSFET P-Channel .15W
5,443预期 2027/3/31
最低: 1
倍数: 1
最大: 600
: 3,000

Diodes Incorporated MOSFET 250mW -20Vdss
2,897预期 2027/6/2
最低: 1
倍数: 1
最大: 620
: 3,000

Diodes Incorporated MOSFET 20V P-Ch Enh FET 10Vgss -80A Idm
2,000预期 2026/10/30
最低: 1
倍数: 1
: 2,000


Diodes Incorporated MOSFET MOSFET BVDSS: 8V-24V
6,000预期 2027/4/2
最低: 1
倍数: 1
最大: 520
: 3,000

Diodes Incorporated MOSFET MOSFET BVDSS: 8V-24V
3,000预期 2027/8/6
最低: 1
倍数: 1
: 3,000

Diodes Incorporated MOSFET MOSFET BVDSS: 8V-24V X2-DFN2015-3 T&R 3K
3,000预期 2026/10/7
最低: 1
倍数: 1
: 3,000

Diodes Incorporated MOSFET -20V -860mA
2,518预期 2026/11/20
最低: 1
倍数: 1
: 3,000


Diodes Incorporated MOSFET MOSFET BVDSS: 8V-24V
19,990在途量
最低: 1
倍数: 1
最大: 1,430
: 10,000

Diodes Incorporated MOSFET P-Ch -20V Enh FET 12Vgss -15A 1.4W
5,953预期 2026/10/21
最低: 1
倍数: 1
最大: 830
: 3,000

Diodes Incorporated MOSFET SINGLE P-CHANNEL
6,000预期 2026/9/4
最低: 1
倍数: 1
: 3,000

Diodes Incorporated MOSFET MOSFET BVDSS: 8V-24V SOT563 T&R 3K
3,000预期 2027/9/1
最低: 1
倍数: 1
: 3,000

Diodes Incorporated MOSFET MOSFET BVDSS: 25V-30V
2,970预期 2027/5/21
最低: 1
倍数: 1
: 3,000

Diodes Incorporated MOSFET P-Ch Enh Mode FET Vdss -30V 25Vgss
3,000预期 2026/10/15
最低: 1
倍数: 1
: 3,000


Diodes Incorporated MOSFET MOSFET BVDSS: 25V-30V
18,695在途量
最低: 1
倍数: 1
最大: 980
: 10,000

Diodes Incorporated MOSFET 30V P-CH MOSFET
9,723预期 2026/8/31
最低: 1
倍数: 1
: 10,000


Diodes Incorporated MOSFET MOSFET BVDSS: 31V-40V
20,000预期 2027/9/1
最低: 10,000
倍数: 10,000
: 10,000
Diodes Incorporated MOSFET MOSFET BVDSS: 41V-60V SOT23 T&R 3K
8,361预期 2027/4/21
最低: 1
倍数: 1
最大: 430
: 3,000

Diodes Incorporated MOSFET MOSFET BVDSS: 41V-60V
5,314预期 2026/11/16
最低: 1
倍数: 1
最大: 1,040
: 3,000
Diodes Incorporated MOSFET 20V 3.5A P-CHNL
2,000预期 2026/11/13
最低: 1
倍数: 1
: 3,000


Diodes Incorporated MOSFET MOSFET BVDSS: 61V-100V
4,680预期 2027/1/15
最低: 1
倍数: 1
: 2,500

Diodes Incorporated MOSFET MOSFET BVDSS: 25V-30V
5,898预期 2027/5/21
最低: 1
倍数: 1
: 3,000

Diodes Incorporated MOSFET MOSFET BVDSS: 31V-40V
2,500预期 2027/1/15
最低: 1
倍数: 1
: 2,500

Diodes Incorporated MOSFET MOSFET BVDSS: 31V-40V PowerDI3333-8 T&R 2K
2,000预期 2026/9/4
最低: 1
倍数: 1
: 2,000

Diodes Incorporated MOSFET MOSFET BVDSS: 41V-60V PowerDI5060-8 T&R 2.5K
2,493预期 2027/10/1
最低: 1
倍数: 1
: 2,500

Diodes Incorporated MOSFET MOSFET BVDSS: 41V-60V
2,993预期 2027/2/19
最低: 1
倍数: 1
最大: 490
: 3,000