|
|
GaN 场效应晶体管 100 V, 1.1 mOhm typ., 474 A, e-mode PowerGaN transistor
- SGT1D5R10MEA
- STMicroelectronics
-
1:
¥70.2295
-
340库存量
-
新产品
|
Mouser 零件编号
511-SGT1D5R10MEA
新产品
|
STMicroelectronics
|
GaN 场效应晶体管 100 V, 1.1 mOhm typ., 474 A, e-mode PowerGaN transistor
|
|
340库存量
|
|
最低: 1
倍数: 1
:
3,000
|
|
GaN FETs
|
GaN
|
SMD/SMT
|
FCLGA-8
|
|
|
|
GaN 场效应晶体管 100 V, 2.9 mOhm typ., 201 A, e-mode PowerGaN transistor
- SGT3D5R10MEB
- STMicroelectronics
-
1:
¥32.9169
-
343库存量
-
新产品
|
Mouser 零件编号
511-SGT3D5R10MEB
新产品
|
STMicroelectronics
|
GaN 场效应晶体管 100 V, 2.9 mOhm typ., 201 A, e-mode PowerGaN transistor
|
|
343库存量
|
|
最低: 1
倍数: 1
最大: 50
:
3,000
|
|
GaN FETs
|
GaN
|
SMD/SMT
|
FCLGA-8
|
|
|
|
MOSFET N-channel 650 V, 38 mOhm typ., 55 A MDmesh DM9 Power MOSFET in a PowerFLAT 8x8 HV package
- ST8L65N050DM9
- STMicroelectronics
-
1:
¥68.9865
-
59库存量
-
3,000预期 2026/11/13
-
新产品
|
Mouser 零件编号
511-ST8L65N050DM9
新产品
|
STMicroelectronics
|
MOSFET N-channel 650 V, 38 mOhm typ., 55 A MDmesh DM9 Power MOSFET in a PowerFLAT 8x8 HV package
|
|
59库存量
3,000预期 2026/11/13
|
|
最低: 1
倍数: 1
:
3,000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-4
|
|
|
|
MOSFET N-channel 650 V, 48 mOhm typ., 44 A MDmesh DM9 Power MOSFET in a PowerFLAT 8x8 HV package
- ST8L65N065DM9
- STMicroelectronics
-
1:
¥57.3249
-
201库存量
-
新产品
|
Mouser 零件编号
511-ST8L65N065DM9
新产品
|
STMicroelectronics
|
MOSFET N-channel 650 V, 48 mOhm typ., 44 A MDmesh DM9 Power MOSFET in a PowerFLAT 8x8 HV package
|
|
201库存量
|
|
最低: 1
倍数: 1
:
3,000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-4
|
|
|
|
绝缘栅双极晶体管(IGBT) SLLIMM compact series IPM, 3-phase inverter, 20 A, 600 V short-circuit rugged IGBT
- STGI15C60S
- STMicroelectronics
-
1:
¥95.4511
-
55库存量
-
新产品
|
Mouser 零件编号
511-STGI15C60S
新产品
|
STMicroelectronics
|
绝缘栅双极晶体管(IGBT) SLLIMM compact series IPM, 3-phase inverter, 20 A, 600 V short-circuit rugged IGBT
|
|
55库存量
|
|
最低: 1
倍数: 1
最大: 10
|
|
IGBTs
|
|
Through Hole
|
CDIPB-26L
|
|
|
|
MOSFET Automotive-grade N-channel 1500 V, 6 Ohm typ., 2.6 A PowerMESH Power MOSFET in an H2PAK-2 package
- STH4N150-2AG
- STMicroelectronics
-
1:
¥47.4826
-
329库存量
-
新产品
|
Mouser 零件编号
511-STH4N150-2AG
新产品
|
STMicroelectronics
|
MOSFET Automotive-grade N-channel 1500 V, 6 Ohm typ., 2.6 A PowerMESH Power MOSFET in an H2PAK-2 package
|
|
329库存量
|
|
最低: 1
倍数: 1
最大: 50
:
1,000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
H2PAK-2
|
|
|
|
MOSFET Automotive N-channel logic level 100 V, 4.6 mOhm max., 119 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package
- STL125N10LF8AG
- STMicroelectronics
-
1:
¥25.3911
-
792库存量
-
新产品
|
Mouser 零件编号
511-STL125N10LF8AG
新产品
|
STMicroelectronics
|
MOSFET Automotive N-channel logic level 100 V, 4.6 mOhm max., 119 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package
|
|
792库存量
|
|
最低: 1
倍数: 1
最大: 50
:
3,000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-8
|
|
|
|
碳化硅肖特基二极管 Automotive 650 V, 10A High surge Silicon Carbide power Schottky diode
- STPSC10G065DY
- STMicroelectronics
-
1:
¥30.6908
-
958库存量
-
新产品
|
Mouser 零件编号
511-STPSC10G065DY
新产品
|
STMicroelectronics
|
碳化硅肖特基二极管 Automotive 650 V, 10A High surge Silicon Carbide power Schottky diode
|
|
958库存量
|
|
最低: 1
倍数: 1
|
|
SiC Schottky Diodes
|
|
Through Hole
|
TO-220AC-2
|
|
|
|
碳化硅肖特基二极管 650 V, 12A High surge Silicon Carbide power Schottky diode
- STPSC12G065D
- STMicroelectronics
-
1:
¥31.3462
-
417库存量
-
1,000预期 2026/12/17
-
新产品
|
Mouser 零件编号
511-STPSC12G065D
新产品
|
STMicroelectronics
|
碳化硅肖特基二极管 650 V, 12A High surge Silicon Carbide power Schottky diode
|
|
417库存量
1,000预期 2026/12/17
|
|
最低: 1
倍数: 1
|
|
SiC Schottky Diodes
|
|
|
|
|
|
|
碳化硅肖特基二极管 650 V, 6A High surge Silicon Carbide power Schottky diode
- STPSC6G065D
- STMicroelectronics
-
1:
¥21.1762
-
722库存量
-
新产品
|
Mouser 零件编号
511-STPSC6G065D
新产品
|
STMicroelectronics
|
碳化硅肖特基二极管 650 V, 6A High surge Silicon Carbide power Schottky diode
|
|
722库存量
|
|
最低: 1
倍数: 1
|
|
SiC Schottky Diodes
|
|
Through Hole
|
TO-220AC-2
|
|
|
|
碳化硅肖特基二极管 650 V, 8A High surge Silicon Carbide power Schottky diode
- STPSC8G065D
- STMicroelectronics
-
1:
¥24.2385
-
1,000库存量
-
新产品
|
Mouser 零件编号
511-STPSC8G065D
新产品
|
STMicroelectronics
|
碳化硅肖特基二极管 650 V, 8A High surge Silicon Carbide power Schottky diode
|
|
1,000库存量
|
|
最低: 1
倍数: 1
|
|
SiC Schottky Diodes
|
|
|
|
|
|
|
MOSFET N-channel 600 V 32 mOhm typ. 62 A MDmesh M9 Power MOSFET in a TO-247 long leads
- STWA60N035M9
- STMicroelectronics
-
1:
¥73.8681
-
266库存量
-
新产品
|
Mouser 零件编号
511-STWA60N035M9
新产品
|
STMicroelectronics
|
MOSFET N-channel 600 V 32 mOhm typ. 62 A MDmesh M9 Power MOSFET in a TO-247 long leads
|
|
266库存量
|
|
最低: 1
倍数: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
整流器 600 V, 15 A Turbo 2 Soft Ultrafast Recovery Diode
- STTH15RQ06W
- STMicroelectronics
-
1:
¥29.3687
-
1,627库存量
|
Mouser 零件编号
511-STTH15RQ06W
|
STMicroelectronics
|
整流器 600 V, 15 A Turbo 2 Soft Ultrafast Recovery Diode
|
|
1,627库存量
|
|
最低: 1
倍数: 1
|
|
Rectifiers
|
|
Through Hole
|
DO-247-2
|
|
|
|
碳化硅肖特基二极管 Automotive 1200 V, 20A power Schottky High Surge silicon carbide diode
- STPSC20G12L2Y
- STMicroelectronics
-
1:
¥111.418
-
1,852库存量
-
新产品
|
Mouser 零件编号
511-STPSC20G12L2Y
新产品
|
STMicroelectronics
|
碳化硅肖特基二极管 Automotive 1200 V, 20A power Schottky High Surge silicon carbide diode
|
|
1,852库存量
|
|
最低: 1
倍数: 1
:
600
|
|
SiC Schottky Diodes
|
|
SMD/SMT
|
HU3PAK-9
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor
- RF5L08350CB4
- STMicroelectronics
-
1:
¥1,455.4739
-
110库存量
-
NRND
|
Mouser 零件编号
511-RF5L08350CB4
NRND
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor
|
|
110库存量
|
|
最低: 1
倍数: 1
:
120
|
|
RF MOSFETs
|
Si
|
SMD/SMT
|
B4E-5
|
|
|
|
肖特基二极管与整流器 Pwr Schottky 2X20A 120V 0.46VF
- STPS40SM120CTN
- STMicroelectronics
-
1:
¥36.725
-
994库存量
-
NRND
|
Mouser 零件编号
511-STPS40SM120CTN
NRND
|
STMicroelectronics
|
肖特基二极管与整流器 Pwr Schottky 2X20A 120V 0.46VF
|
|
994库存量
|
|
最低: 1
倍数: 1
|
|
Schottky Diodes & Rectifiers
|
Si
|
Through Hole
|
|
|
|
|
MOSFET N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-220FP ultra na
- STFU28N65M2
- STMicroelectronics
-
1:
¥34.1599
-
1,621库存量
|
Mouser 零件编号
511-STFU28N65M2
|
STMicroelectronics
|
MOSFET N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-220FP ultra na
|
|
1,621库存量
|
|
最低: 1
倍数: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
|
|
|
绝缘栅双极晶体管(IGBT) 30A 600V Fast IGBT 5kHz 1.9 VCE
- STGWF30NC60S
- STMicroelectronics
-
1:
¥48.8047
-
357库存量
|
Mouser 零件编号
511-STGWF30NC60S
|
STMicroelectronics
|
绝缘栅双极晶体管(IGBT) 30A 600V Fast IGBT 5kHz 1.9 VCE
|
|
357库存量
|
|
最低: 1
倍数: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-3PF
|
|
|
|
双向可控硅 Sensitive 6 A High Temperature
- T610H-6T
- STMicroelectronics
-
1:
¥14.803
-
715库存量
|
Mouser 零件编号
511-T610H-6T
|
STMicroelectronics
|
双向可控硅 Sensitive 6 A High Temperature
|
|
715库存量
|
|
最低: 1
倍数: 1
|
|
Triacs
|
|
Through Hole
|
TO-220-3
|
|
|
|
MOSFET模块 ACEPACK 2 power module triple boost 650V 49 mOhm half-bridge 23.5mOhm SiC MOSFET
- A2TBH45M65W3-FC
- STMicroelectronics
-
1:
¥701.2667
-
36库存量
-
新产品
|
Mouser 零件编号
511-A2TBH45M65W3-FC
新产品
|
STMicroelectronics
|
MOSFET模块 ACEPACK 2 power module triple boost 650V 49 mOhm half-bridge 23.5mOhm SiC MOSFET
|
|
36库存量
|
|
最低: 1
倍数: 1
|
|
MOSFET Modules
|
|
Press Fit
|
ACEPACK
|
|
|
|
ESD保护二极管/TVS二极管 Automotive dual-line unidirectional 12 V ESD protection in SOT323
- ESDA14WY
- STMicroelectronics
-
1:
¥3.4691
-
29,254库存量
-
新产品
|
Mouser 零件编号
511-ESDA14WY
新产品
|
STMicroelectronics
|
ESD保护二极管/TVS二极管 Automotive dual-line unidirectional 12 V ESD protection in SOT323
|
|
29,254库存量
|
|
最低: 1
倍数: 1
:
3,000
|
|
|
|
|
SOT-323-3
|
|
|
|
肖特基二极管与整流器 Rad-hard 40 V, 3 A Schottky rectifier in SOD128Flat package
- LEO1N5822AF
- STMicroelectronics
-
1:
¥114.4012
-
775库存量
-
新产品
|
Mouser 零件编号
511-LEO1N5822AF
新产品
|
STMicroelectronics
|
肖特基二极管与整流器 Rad-hard 40 V, 3 A Schottky rectifier in SOD128Flat package
|
|
775库存量
|
|
最低: 1
倍数: 1
:
500
|
|
Schottky Diodes & Rectifiers
|
Si
|
SMD/SMT
|
SOD-128-2
|
|
|
|
MOSFET模块 Automotive-grade ACEPACK DMT-32 power module, sixpac topology, 1200 V, 47.5 mOhm typ. SiC Power MOSFET with NTC
- M2P45M12W2-1LA
- STMicroelectronics
-
1:
¥538.6484
-
124库存量
-
新产品
|
Mouser 零件编号
511-M2P45M12W2-1LA
新产品
|
STMicroelectronics
|
MOSFET模块 Automotive-grade ACEPACK DMT-32 power module, sixpac topology, 1200 V, 47.5 mOhm typ. SiC Power MOSFET with NTC
|
|
124库存量
|
|
最低: 1
倍数: 1
|
|
MOSFET Modules
|
|
Press Fit
|
|
|
|
|
MOSFET模块 Automotive-grade ACEPACK DMT-32 power module, 3-phase four wire PFC topology, 1200 V, 84 mOhm typ. SiC Power MOSFET with rectifier diode and NTC
- M2TP80M12W2-2LA
- STMicroelectronics
-
1:
¥435.8297
-
127库存量
-
新产品
|
Mouser 零件编号
511-M2TP80M12W2-2LA
新产品
|
STMicroelectronics
|
MOSFET模块 Automotive-grade ACEPACK DMT-32 power module, 3-phase four wire PFC topology, 1200 V, 84 mOhm typ. SiC Power MOSFET with rectifier diode and NTC
|
|
127库存量
|
|
最低: 1
倍数: 1
|
|
MOSFET Modules
|
|
Press Fit
|
|
|
|
|
GaN 场效应晶体管 700 V, 60 mOhm typ., 29 A, e-mode PowerGaN transistor
- SGT080R70ILB
- STMicroelectronics
-
1:
¥56.6582
-
880库存量
-
新产品
|
Mouser 零件编号
511-SGT080R70ILB
新产品
|
STMicroelectronics
|
GaN 场效应晶体管 700 V, 60 mOhm typ., 29 A, e-mode PowerGaN transistor
|
|
880库存量
|
|
最低: 1
倍数: 1
:
3,000
|
|
GaN FETs
|
GaN
|
SMD/SMT
|
PowerFLAT-8
|
|