TO-247-4 晶体管

结果: 440
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS 产品类型 技术 安装风格 封装 / 箱体 晶体管极性
onsemi 碳化硅MOSFET SIC MOS TO247-4L 12MOHM 650V M3S 439库存量
最低: 1
倍数: 1
最大: 45

SiC MOSFETS SiC Through Hole TO-247-4 N-Channel
onsemi 碳化硅MOSFET SIC MOS TO247-4L 16MOHM 650V M3S 422库存量
最低: 1
倍数: 1
最大: 45

SiC MOSFETS SiC Through Hole TO-247-4 N-Channel
onsemi 碳化硅MOSFET SIC MOS TO247-4L 12MOHM 650V M3S 439库存量
最低: 1
倍数: 1
最大: 45

SiC MOSFETS SiC Through Hole TO-247-4 N-Channel
onsemi 碳化硅MOSFET SIC MOS TO247-4L 16MOHM 650V M3S 450库存量
最低: 1
倍数: 1
最大: 45

SiC MOSFETS SiC Through Hole TO-247-4 N-Channel
ROHM Semiconductor 碳化硅MOSFET 1200V Nch SiC Trench MOSFET in 4pin Package - SCT3105KR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver 87库存量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole TO-247-4 N-Channel
Infineon Technologies 碳化硅MOSFET Automotive SiC MOSFET, 750 V 13库存量
240在途量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole TO-247-4 N-Channel
Infineon Technologies 绝缘栅双极晶体管(IGBT) High speed and low saturation voltage 750 V TRENCHSTOP IGBT7 technology 180库存量
最低: 1
倍数: 1

IGBTs Si Through Hole TO-247-4
Infineon Technologies 绝缘栅双极晶体管(IGBT) High speed and low saturation voltage 750 V TRENCHSTOP IGBT7 technology 153库存量
最低: 1
倍数: 1

IGBTs Si Through Hole TO-247-4
Infineon Technologies MOSFET SILICON CARBIDE MOSFET 215库存量
最低: 1
倍数: 1

MOSFETs SiC Through Hole TO-247-4 N-Channel
Infineon Technologies MOSFET SILICON CARBIDE MOSFET 240库存量
最低: 1
倍数: 1

MOSFETs SiC Through Hole TO-247-4 N-Channel
Infineon Technologies MOSFET SILICON CARBIDE MOSFET 225库存量
最低: 1
倍数: 1

MOSFETs SiC Through Hole TO-247-4 N-Channel
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 173库存量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole TO-247-4 N-Channel
Infineon Technologies 碳化硅MOSFET CoolSiC 1400 V SiC MOSFET G2 with .XT interconnection technology 126库存量
240预期 2026/10/8
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole TO-247-4 N-Channel
Infineon Technologies 碳化硅MOSFET CoolSiC 1400 V SiC MOSFET G2 with .XT interconnection technology 118库存量
480在途量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole TO-247-4 N-Channel
onsemi JFET UF3N120007K4S 1,115库存量
最低: 1
倍数: 1
最大: 60

JFETs SiC Through Hole TO-247-4 N-Channel
onsemi JFET 750V/9MOCOMBO-FETG4TO2 540库存量
最低: 1
倍数: 1
最大: 60

JFETs SiC Through Hole TO-247-4 N-Channel
Microchip Technology 碳化硅MOSFET MOSFET SIC 700 V 15 mOhm TO-247-4 Notch 168库存量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole TO-247-4 N-Channel
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2 535库存量
240预期 2026/11/5
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole TO-247-4 N-Channel
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2 554库存量
240在途量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole TO-247-4 N-Channel
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2 1,377库存量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole TO-247-4 N-Channel
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2 336库存量
240预期 2026/10/1
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole TO-247-4 N-Channel
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2 961库存量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole TO-247-4 N-Channel
Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 53 mohm G2 687库存量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole TO-247-4 N-Channel
IXYS 碳化硅MOSFET TO247 1200V N CH 20A 546库存量
最低: 1
倍数: 1
: 450

SiC MOSFETS SiC Through Hole TO-247-4 N-Channel
IXYS 碳化硅MOSFET SiC MOSFET in TO247-4L HV 550库存量
最低: 1
倍数: 1

SiC MOSFETS SiC Through Hole TO-247-4 N-Channel