PolarP3™ HiPerFET™ Power MOSFETs

IXYS PolarP3™ HiPerFET™ Power MOSFETs are the latest addition to the benchmark high-performance Polar-Series for the product portfolio between 300V, 500V, and 600V. The high Figure of Merit (FOM), which is the multiplication of Qg and RDS(on), provides an excellent alternative to weaker super junction technologies. These PolarP3 HiPerFETs demonstrate up to a 12% reduction in on-state resistance (Rdson), a 14 percent reduction in gate charge (Qg) and as high as a 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing the total power density of the device.

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数量 RoHS ECAD模型 技术
安装风格
封装 / 箱体
晶体管极性
通道数量
Vds-漏源极击穿电压
Id-连续漏极电流
Rds On-漏源导通电阻
Vgs - 栅极-源极电压
Vgs th-栅源极阈值电压
最小工作温度
最大工作温度
Pd-功率耗散
系列
封装
IXYS MOSFET模块 500V 112A 0.039Ohm PolarP3 Power MOSFET
数据表
413库存量
¥418.4616
¥319.2815
最低： 1
倍数： 1
Si Screw Mount SOT-227-4 N-Channel 1 Channel 500 V 112 A 39 mOhms - 30 V, + 30 V 5 V - 55 C + 150 C 1.5 kW IXFN132N50 Tube
IXYS MOSFET模块 600V 90A 0.056Ohm PolarP3 Power MOSFET
数据表
502库存量
¥418.4616
¥339.1356
¥323.6659
报价
最低： 1
倍数： 1
Si Screw Mount SOT-227-4 N-Channel 1 Channel 600 V 90 A 56 mOhms - 30 V, + 30 V 3 V - 55 C + 150 C 1.5 mW IXFN110N60 Tube
IXYS MOSFET模块 N-Channel: Power MOSFET w/Fast Diode
数据表
765库存量
¥455.1866
¥354.1081
最低： 1
倍数： 1
Si Screw Mount SOT-227-4 N-Channel 1 Channel 300 V 192 A 14.5 mOhms - 20 V, + 20 V - 55 C + 150 C 1.5 kW IXFN210N30 Tube
IXYS MOSFET模块 Polar3 HiPerFET Power MOSFET
数据表
无库存交货期 28 周
¥261.1317
最低： 300
倍数： 10
Si Screw Mount SOT-227-4 N-Channel 1 Channel 600 V 66 A 70 mOhms - 30 V, + 30 V - 55 C + 150 C 960 W IXFN80N60 Tube