N/A MOSFET模块

结果: 20
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs th-栅源极阈值电压 最小工作温度 最大工作温度 Pd-功率耗散 系列 封装
GeneSiC Semiconductor MOSFET模块 1200V 9mohm 3L-T-NPC SiCPAK G SiC Module 95库存量
最低: 1
倍数: 1

SiC Press Fit SiCPAK G 1.2 kV 9.3 mOhms SiCPAK G Tray
GeneSiC Semiconductor MOSFET模块 1200V 9mohm Full-Bridge SiCPAK G SiC Module 95库存量
最低: 1
倍数: 1

SiC Press Fit SiCPAK N-Channel 1.2 kV 104 A 12.5 mOhms - 40 C + 175 C 216 W SiCPAK G Tray
GeneSiC Semiconductor MOSFET模块 1200V 5mohm Half-Bridge SiCPAK G SiC Module 96库存量
最低: 1
倍数: 1

SiC Press Fit SiCPAK N-Channel 1.2 kV 216 A 4.6 mOhms 2.2 V - 40 C + 175 C 444 mW SiCPAK G Tray
GeneSiC Semiconductor MOSFET模块 1200V 9mohm Half-Bridge SiCPAK F SiC Module 61库存量
最低: 1
倍数: 1

SiC Press Fit SiCPAK N-Channel 1.2 kV 109 A 12.5 mOhms 2.7 V - 40 C + 175 C 238 W SiCPAK F Tray
GeneSiC Semiconductor MOSFET模块 1200V 17mohm Half-Bridge SiCPAK F SiC Module 94库存量
最低: 1
倍数: 1

SiC Press Fit SiCPAK N-Channel 1.2 kV 68 A 23 mOhms 2.2 V - 40 C + 175 C 170 W SiCPAK F Tray
GeneSiC Semiconductor MOSFET模块 1200V 18mohm Full-Bridge SiCPAK F SiC Module 95库存量
最低: 1
倍数: 1

SiC Press Fit SiCPAK N-Channel 1.2 kV 53 A 24 mOhms 2.2 V - 40 C + 175 C 106 W SiCPAK F Tray
GeneSiC Semiconductor MOSFET模块 1200V 5mohm Half-Bridge SiCPAK G SiC Module, TIM

SiC Press Fit SiCPAK N-Channel 1.2 kV 216 A 4.6 mOhms 2.2 V - 40 C + 175 C 444 mW SiCPAK F Tray
GeneSiC Semiconductor MOSFET模块 1200V 9mohm 3L-T-NPC SiCPAK G SiC Module, TIM

SiC Press Fit SiCPAK G 1.2 kV 9.3 mOhms SiCPAK F Tray
GeneSiC Semiconductor MOSFET模块 1200V 9mohm Full-Bridge SiCPAK G SiC Module, TIM

SiC Press Fit SiCPAK N-Channel 1.2 kV 104 A 12.5 mOhms - 40 C + 175 C 216 W SiCPAK F Tray
GeneSiC Semiconductor MOSFET模块 1200V 18mohm Full-Bridge SiCPAK F SiC Module. TIM

SiC Press Fit SiCPAK N-Channel 1.2 kV 53 A 24 mOhms 2.2 V - 40 C + 175 C 106 W SiCPAK F Tray
GeneSiC Semiconductor MOSFET模块 1200V 9mohm Half-Bridge SiCPAK F SiC Module, TIM

SiC Press Fit SiCPAK N-Channel 1.2 kV 109 A 12.5 mOhms 2.7 V - 40 C + 175 C 238 W SiCPAK F Tray
GeneSiC Semiconductor MOSFET模块 1200V 17mohm Half-Bridge SiCPAK F SiC Module, TIM

SiC Press Fit SiCPAK N-Channel 1.2 kV 68 A 23 mOhms 2.2 V - 40 C + 175 C 170 W SiCPAK F Tray
GeneSiC Semiconductor MOSFET模块 2300V 5.8m Half-Bridge SiCPAK G+ SiC Power Module

2.3 kV 296 A N-Channel Silicon Carbide (SiC) Power MOSFET Tray
GeneSiC Semiconductor MOSFET模块 2300V 8.0m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module

SiCPAK G+ 2.3 kV 8 mOhms - 55 C + 150 C N-Channel Silicon Carbide (SiC) Power MOSFET Tray
GeneSiC Semiconductor MOSFET模块 2300V 8.0m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module, with Pre-Applied TIM

2.3 kV 8 mOhms - 55 C + 150 C N-Channel Silicon Carbide (SiC) Power MOSFET Tray
GeneSiC Semiconductor MOSFET模块 2300V 5.8m Half-Bridge SiCPAK G+ SiC Power Module, with Pre-Applied TIM

2.3 kV N-Channel Silicon Carbide (SiC) Power MOSFET Tray
GeneSiC Semiconductor G4H11MT23GB4
GeneSiC Semiconductor MOSFET模块 2300V 11.5m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module

2.3 kV N-Channel Silicon Carbide (SiC) Power MOSFET Tray
GeneSiC Semiconductor G4H22MT33GB4
GeneSiC Semiconductor MOSFET模块 3300V 22.5m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module

3.3 kV N-Channel Silicon Carbide (SiC) Power MOSFET Tray
GeneSiC Semiconductor G4H22MT33GB4-T
GeneSiC Semiconductor MOSFET模块 3300V 22.5m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module, with Pre-Applied TIM

3.3 kV N-Channel Silicon Carbide (SiC) Power MOSFET Tray
GeneSiC Semiconductor G4H11MT23GB4-T
GeneSiC Semiconductor MOSFET模块 2300V 11.5m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module, with Pre-Applied TIM

2.3 kV N-Channel Silicon Carbide (SiC) Power MOSFET Tray