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MOSFET模块 PM-MOSFET-FREDFET-8-SP1
- APTM50H15FT1G
- Microchip Technology
-
1:
¥545.677
-
14库存量
|
Mouser 零件编号
494-APTM50H15FT1G
|
Microchip Technology
|
MOSFET模块 PM-MOSFET-FREDFET-8-SP1
|
|
14库存量
|
|
|
¥545.677
|
|
|
¥522.851
|
|
|
查看
|
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报价
|
|
最低: 1
倍数: 1
|
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MOSFET Modules
|
Si
|
Screw Mount
|
SP1-12
|
N-Channel
|
|
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射频(RF)双极晶体管 960-1215MHz 50W Gain: 9.1dB min
MACOM MAPRST0912-50
- MAPRST0912-50
- MACOM
-
1:
¥6,549.1184
-
2库存量
|
Mouser 零件编号
937-MAPRST0912-50
|
MACOM
|
射频(RF)双极晶体管 960-1215MHz 50W Gain: 9.1dB min
|
|
2库存量
|
|
|
¥6,549.1184
|
|
|
¥5,750.5813
|
|
最低: 1
倍数: 1
|
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RF Bipolar Transistors
|
Si
|
|
|
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MOSFET模块 FREDFET MOS 8 800 V 53 A SOT-227
- APT53F80J
- Microchip Technology
-
1:
¥526.0715
-
5库存量
|
Mouser 零件编号
494-APT53F80J
|
Microchip Technology
|
MOSFET模块 FREDFET MOS 8 800 V 53 A SOT-227
|
|
5库存量
|
|
|
¥526.0715
|
|
|
¥495.3016
|
|
最低: 1
倍数: 1
|
|
MOSFET Modules
|
Si
|
Screw Mount
|
SOT-227-4
|
N-Channel
|
|
|
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GaN 场效应晶体管 GaN HEMT 1.2-1.4GHz, 500 Watt
- CGHV14500F
- MACOM
-
1:
¥11,577.3472
-
交货期 26 周
|
Mouser 零件编号
941-CGHV14500F
|
MACOM
|
GaN 场效应晶体管 GaN HEMT 1.2-1.4GHz, 500 Watt
|
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交货期 26 周
|
|
最低: 1
倍数: 1
|
|
GaN FETs
|
GaN
|
Screw Mount
|
440117
|
N-Channel
|
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GaN 场效应晶体管 GaN HEMT DC-2.7GHz, 60 Watt
- CGHV27060MP
- MACOM
-
250:
¥1,836.9167
-
无库存交货期 26 周
|
Mouser 零件编号
941-CGHV27060MP
|
MACOM
|
GaN 场效应晶体管 GaN HEMT DC-2.7GHz, 60 Watt
|
|
无库存交货期 26 周
|
|
最低: 250
倍数: 250
:
250
|
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GaN FETs
|
GaN
|
SMD/SMT
|
QSOP-20
|
N-Channel
|
|
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GaN 场效应晶体管 GaN HEMT 1.2-1.4GHz, 250 Watt
- CGHV14250F
- MACOM
-
1:
¥5,891.1646
-
无库存交货期 26 周
|
Mouser 零件编号
941-CGHV14250F
|
MACOM
|
GaN 场效应晶体管 GaN HEMT 1.2-1.4GHz, 250 Watt
|
|
无库存交货期 26 周
|
|
|
¥5,891.1646
|
|
|
¥5,191.1296
|
|
最低: 1
倍数: 1
|
|
GaN FETs
|
GaN
|
Screw Mount
|
440162
|
N-Channel
|
|
|
|
MOSFET模块 MOSFET MOS 8 800 V 32 A SOT-227
Microchip Technology APT32M80J
- APT32M80J
- Microchip Technology
-
1:
¥251.6171
-
无库存交货期 20 周
|
Mouser 零件编号
494-APT32M80J
|
Microchip Technology
|
MOSFET模块 MOSFET MOS 8 800 V 32 A SOT-227
|
|
无库存交货期 20 周
|
|
|
¥251.6171
|
|
|
¥235.6615
|
|
|
¥234.3394
|
|
|
查看
|
|
|
报价
|
|
最低: 1
倍数: 1
|
|
MOSFET Modules
|
Si
|
|
|
|
|
|
|
射频(RF)双极晶体管 960-1215MHz 500W Gain: 9.0dB min
MACOM MAPR-000912-500S00
- MAPR-000912-500S00
- MACOM
-
20:
¥10,296.899
-
无库存交货期 22 周
|
Mouser 零件编号
937-MAPR000912500S00
|
MACOM
|
射频(RF)双极晶体管 960-1215MHz 500W Gain: 9.0dB min
|
|
无库存交货期 22 周
|
|
最低: 20
倍数: 20
|
|
RF Bipolar Transistors
|
Si
|
|
|
|
|
|
|
MOSFET模块 MOSFET MOS 7 500 V 50 mOhm SOT-227
Microchip Technology APT50M50JLL
- APT50M50JLL
- Microchip Technology
-
20:
¥434.0895
-
无库存交货期 20 周
|
Mouser 零件编号
494-APT50M50JLL
|
Microchip Technology
|
MOSFET模块 MOSFET MOS 7 500 V 50 mOhm SOT-227
|
|
无库存交货期 20 周
|
|
|
¥434.0895
|
|
|
¥401.3421
|
|
|
查看
|
|
|
报价
|
|
最低: 20
倍数: 1
|
|
MOSFET Modules
|
Si
|
Screw Mount
|
|
|
|
|
|
射频(RF)双极晶体管 960-1215MHz 350W Gain: 9.4dB min
MACOM MAPRST0912-350
- MAPRST0912-350
- MACOM
-
20:
¥7,136.6506
-
无库存交货期 28 周
|
Mouser 零件编号
937-MAPRST0912-350
|
MACOM
|
射频(RF)双极晶体管 960-1215MHz 350W Gain: 9.4dB min
|
|
无库存交货期 28 周
|
|
最低: 20
倍数: 20
|
|
RF Bipolar Transistors
|
Si
|
|
Ceramic
|
NPN
|
|
|
|
GaN 场效应晶体管 GaN HEMT 3.1-3.5GHz, 240 Watt
MACOM CGH35240F
- CGH35240F
- MACOM
-
1:
¥8,259.3508
-
无库存交货期 26 周
|
Mouser 零件编号
941-CGH35240F
|
MACOM
|
GaN 场效应晶体管 GaN HEMT 3.1-3.5GHz, 240 Watt
|
|
无库存交货期 26 周
|
|
|
¥8,259.3508
|
|
|
¥7,220.7678
|
|
最低: 1
倍数: 1
|
|
GaN FETs
|
GaN
|
Screw Mount
|
440201
|
N-Channel
|
|
|
|
双极晶体管 - 双极结型晶体管(BJT) 350V 1A 800mW Long-Lead Power BJT THT
Microchip / Microsemi JANTX2N3439L
- JANTX2N3439L
- Microchip / Microsemi
-
1:
¥155.5897
-
无库存交货期 50 周
|
Mouser 零件编号
494-JANTX2N3439L
|
Microchip / Microsemi
|
双极晶体管 - 双极结型晶体管(BJT) 350V 1A 800mW Long-Lead Power BJT THT
|
|
无库存交货期 50 周
|
|
|
¥155.5897
|
|
|
¥141.2839
|
|
|
¥126.9668
|
|
最低: 1
倍数: 1
|
否
|
BJTs - Bipolar Transistors
|
Si
|
|
|
|
|
|
|
绝缘栅双极晶体管(IGBT) LOW LOSS IGBT TECH 600V 15A
- IGP15N60T
- Infineon Technologies
-
1:
¥14.3058
-
5,008库存量
-
寿命结束
|
Mouser 零件编号
726-IGP15N60T
寿命结束
|
Infineon Technologies
|
绝缘栅双极晶体管(IGBT) LOW LOSS IGBT TECH 600V 15A
|
|
5,008库存量
|
|
|
¥14.3058
|
|
|
¥7.7631
|
|
|
¥6.2828
|
|
|
¥5.2206
|
|
|
查看
|
|
|
¥4.8025
|
|
|
¥4.5539
|
|
|
¥4.3844
|
|
|
¥4.0567
|
|
最低: 1
倍数: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-220-3
|
|
|
|
|
MOSFET模块
- DF23MR12W1M1B11BOMA1
- Infineon Technologies
-
1:
¥946.6801
-
21库存量
-
寿命结束
|
Mouser 零件编号
726-DF23MR12W1M1B11
寿命结束
|
Infineon Technologies
|
MOSFET模块
|
|
21库存量
|
|
|
¥946.6801
|
|
|
¥787.4518
|
|
|
¥722.2734
|
|
最低: 1
倍数: 1
|
|
MOSFET Modules
|
Si
|
Screw Mount
|
Easy1B-2
|
N-Channel
|
|
|
|
射频(RF)双极晶体管 RF BIP TRANSISTOR
- BGR 420 H6327
- Infineon Technologies
-
1:
¥10.7576
-
2,343库存量
-
寿命结束
|
Mouser 零件编号
726-BGR420H6327
寿命结束
|
Infineon Technologies
|
射频(RF)双极晶体管 RF BIP TRANSISTOR
|
|
2,343库存量
|
|
|
¥10.7576
|
|
|
¥7.6388
|
|
|
¥4.746
|
|
|
¥3.277
|
|
|
¥2.3956
|
|
|
查看
|
|
|
¥2.825
|
|
|
¥2.1357
|
|
|
¥1.9549
|
|
|
¥1.7741
|
|
最低: 1
倍数: 1
|
|
RF Bipolar Transistors
|
Si
|
|
|
|
|
|
|
IGBT 模块 HYBRID PACK 1
- FS400R07A1E3S7BOMA1
- Infineon Technologies
-
1:
¥2,925.9994
-
8库存量
-
寿命结束
|
Mouser 零件编号
641-FS400R07A1E3
寿命结束
|
Infineon Technologies
|
IGBT 模块 HYBRID PACK 1
|
|
8库存量
|
|
|
¥2,925.9994
|
|
|
¥2,694.2251
|
|
最低: 1
倍数: 1
|
|
IGBT Modules
|
Si
|
Through Hole
|
HybridPack1
|
|
|
|
|
绝缘栅双极晶体管(IGBT) IGBT 600V
- IGP20N60H3
- Infineon Technologies
-
1:
¥21.5943
-
156库存量
-
寿命结束
|
Mouser 零件编号
726-IGP20N60H3X
寿命结束
|
Infineon Technologies
|
绝缘栅双极晶体管(IGBT) IGBT 600V
|
|
156库存量
|
|
|
¥21.5943
|
|
|
¥20.1027
|
|
|
¥18.6111
|
|
|
¥8.2264
|
|
|
查看
|
|
|
¥7.3676
|
|
|
¥6.8817
|
|
|
¥6.5314
|
|
|
¥5.9438
|
|
最低: 1
倍数: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-220-3
|
|
|
|
|
GaN 场效应晶体管 GaN HEMT 2.9-3.5GHz, 150 Watt
- CGHV35150F
- MACOM
-
1:
¥5,810.3018
-
17库存量
|
Mouser 零件编号
941-CGHV35150F
|
MACOM
|
GaN 场效应晶体管 GaN HEMT 2.9-3.5GHz, 150 Watt
|
|
17库存量
|
|
|
¥5,810.3018
|
|
|
¥5,150.3931
|
|
最低: 1
倍数: 1
|
|
GaN FETs
|
GaN
|
Screw Mount
|
440193
|
N-Channel
|
|
|
|
GaN 场效应晶体管 GaN HEMT Die DC-6.0GHz, 75 Watt
- CGHV60075D5-GP4
- MACOM
-
受限供货情况
|
Mouser 零件编号
941-CGHV60075D
|
MACOM
|
GaN 场效应晶体管 GaN HEMT Die DC-6.0GHz, 75 Watt
|
|
|
|
|
|
GaN FETs
|
GaN
|
SMD/SMT
|
Die
|
N-Channel
|
|
|
|
GaN 场效应晶体管 GaN HEMT DC-15GHz, 25 Watt
|
Mouser 零件编号
941-CGHV1F025S
|
MACOM
|
GaN 场效应晶体管 GaN HEMT DC-15GHz, 25 Watt
|
|
|
|
|
|
GaN FETs
|
GaN
|
SMD/SMT
|
DFN-12
|
N-Channel
|
|
|
|
GaN 场效应晶体管 GaN HEMT Die DC-6.0GHz, 120 Watt
- CGH60120D-GP4
- MACOM
-
受限供货情况
|
Mouser 零件编号
941-CGH60120D
|
MACOM
|
GaN 场效应晶体管 GaN HEMT Die DC-6.0GHz, 120 Watt
|
|
|
|
|
|
GaN FETs
|
GaN
|
SMD/SMT
|
Die
|
N-Channel
|
|