Power Modules MOSFET模块

结果: 19
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数量 RoHS ECAD模型 技术
安装风格
封装 / 箱体
晶体管极性
通道数量
Vds-漏源极击穿电压
Id-连续漏极电流
Rds On-漏源导通电阻
Vgs - 栅极-源极电压
Vgs th-栅源极阈值电压
最小工作温度
最大工作温度
Pd-功率耗散
系列
封装
STMicroelectronics MOSFET模块 Automotive-grade ACEPACK DMT-32 power module, sixpac topology, 1200 V, 47.5 mOhm typ. SiC Power MOSFET with NTC
数据表
124库存量
最低： 1
倍数： 1

Press Fit 6 Channel 30 A 60.5 mOhms 1.2 kV - 10 V, 22 V - 40 C + 175 C Tube
STMicroelectronics MOSFET模块 Automotive-grade ACEPACK DMT-32 power module, 3-phase four wire PFC topology, 1200 V, 84 mOhm typ. SiC Power MOSFET with rectifier diode and NTC
数据表
127库存量
最低： 1
倍数： 1

Press Fit 6 Channel 1.2 kV 30 A 114 mOhms - 10 V, + 22 V 5 V - 40 C + 175 C Tube
SemiQ MOSFET模块 Gen3 1200V 8mohm SiC MOSFET & SBD Module, SOT-227
数据表

SiC Screw Mount SOT-227-4 N-Channel 1 Channel 1.2 kV 189 A 12 mOhms - 8 V, + 22 V 4 V - 55 C + 175 C 536 W GCMS Tube
SemiQ MOSFET模块 Gen3 1200V 16mohm SiC MOSFET & SBD Module, SOT-227
数据表

SiC Screw Mount SOT-227-4 N-Channel 1 Channel 1.2 kV 103 A 23 mOhms - 8 V, + 22 V 4 V - 55 C + 175 C 303 W GCMS Tube
SemiQ MOSFET模块 Gen3 1200V 40mohm SiC MOSFET & SBD Module, SOT-227
数据表

SiC Screw Mount SOT-227-4 N-Channel 1 Channel 1.2 kV 53 A 52 mOhms - 8 V, + 22 V 4 V - 55 C + 175 C 183 W GCMS Tube
SemiQ MOSFET模块 Gen3 1200V 80mohm SiC MOSFET & SBD Module, SOT-227
数据表

SiC Screw Mount SOT-227-4 N-Channel 1 Channel 1.2 kV 28 A 100 mOhms - 8 V, + 22 V 4 V - 55 C + 175 C 118 W GCMS Tube
SemiQ MOSFET模块 Gen3 1200V 8mohm SiC MOSFET Module, SOT-227
数据表

SiC Screw Mount SOT-227-4 N-Channel 1 Channel 1.2 kV 188 A 12 mOhms - 8 V, + 22 V 4 V - 55 C + 175 C 536 W GCMX Tube
SemiQ MOSFET模块 Gen3 1200V 16mohm SiC MOSFET Module, SOT-227
数据表

SiC Screw Mount SOT-227-4 N-Channel 1 Channel 1.2 kV 103 A 23 mOhms - 8 V, + 22 V 4 V - 55 C + 175 C 303 W GCMX Tube
SemiQ MOSFET模块 Gen3 1200V 40mohm SiC MOSFET Module, SOT-227
数据表

SiC Screw Mount SOT-227-4 N-Channel 1 Channel 1.2 kV 53 A 52 mOhms - 8 V, + 22 V 4 V - 55 C + 175 C 183 W GCMX Tube
SemiQ MOSFET模块 Gen3 1200V 80mohm SiC MOSFET Module, SOT-227
数据表

SiC Screw Mount SOT-227-4 N-Channel 1 Channel 1.2 kV 28 A 100 mOhms - 8 V, + 22 V 4 V - 55 C + 175 C 118 W GCMX Tube
STMicroelectronics MOSFET模块 Automotive-grade ACEPACK DMT-32 power module, 3-phase four wire PFC topology, 12
数据表

Press Fit 6 Channel 1.2 kV 30 A 114 mOhms - 10 V to + 22 V 5 V - 40 C + 175 C Tube
GeneSiC Semiconductor MOSFET模块 2300V 5.8m Half-Bridge SiCPAK G+ SiC Power Module

2.3 kV 296 A N-Channel Silicon Carbide (SiC) Power MOSFET Tray
GeneSiC Semiconductor MOSFET模块 2300V 5.8m Half-Bridge SiCPAK G+ SiC Power Module, with Pre-Applied TIM

2.3 kV N-Channel Silicon Carbide (SiC) Power MOSFET Tray
GeneSiC Semiconductor MOSFET模块 2300V 8.0m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module
数据表

SiCPAK G+ 2.3 kV 8 mOhms - 55 C + 150 C N-Channel Silicon Carbide (SiC) Power MOSFET Tray
GeneSiC Semiconductor MOSFET模块 2300V 8.0m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module, with Pre-Applied TIM
数据表

2.3 kV 8 mOhms - 55 C + 150 C N-Channel Silicon Carbide (SiC) Power MOSFET Tray
GeneSiC Semiconductor G4H11MT23GB4
GeneSiC Semiconductor MOSFET模块 2300V 11.5m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module

2.3 kV N-Channel Silicon Carbide (SiC) Power MOSFET Tray
GeneSiC Semiconductor G4H11MT23GB4-T
GeneSiC Semiconductor MOSFET模块 2300V 11.5m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module, with Pre-Applied TIM

2.3 kV N-Channel Silicon Carbide (SiC) Power MOSFET Tray
GeneSiC Semiconductor G4H22MT33GB4
GeneSiC Semiconductor MOSFET模块 3300V 22.5m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module

3.3 kV N-Channel Silicon Carbide (SiC) Power MOSFET Tray
GeneSiC Semiconductor G4H22MT33GB4-T
GeneSiC Semiconductor MOSFET模块 3300V 22.5m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module, with Pre-Applied TIM

3.3 kV N-Channel Silicon Carbide (SiC) Power MOSFET Tray