TO-247-4 MOSFET

结果: 65
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STMicroelectronics MOSFET N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET 489库存量
最低: 1
倍数: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 95 A 23 mOhms - 30 V, 30 V 4.2 V 230 nC - 55 C + 150 C 463 W Enhancement Tube
STMicroelectronics MOSFET N-channel 650 V, 39 mOhm typ., 54 A MDmesh M9 Power MOSFET 576库存量
最低: 1
倍数: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 54 A 45 mOhms - 30 V, 30 V 4.2 V 80 nC - 55 C + 150 C 312 W Enhancement Tube

onsemi MOSFET 650V N-Channel SuperFET III MOSFET 125库存量
最低: 1
倍数: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 75 A 23 mOhms - 30 V, 30 V 2.5 V 222 nC - 55 C + 150 C 595 W Enhancement SuperFET III Tube
Infineon Technologies MOSFET N-Ch 700V 75A TO247-4 167库存量
最低: 1
倍数: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 75 A 17 mOhms - 20 V, 20 V 3 V 215 nC - 55 C + 150 C 446 W Enhancement CoolMOS Tube
STMicroelectronics MOSFET N-channel 650 V, 33 mOhm typ., 75 A MDmesh DM6 Power MOSFET in a TO247-4 package 525库存量
最低: 1
倍数: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 75 A 36 mOhms - 25 V, 25 V 4.75 V 118 nC - 55 C + 150 C 480 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER_NEW 211库存量
最低: 1
倍数: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 69 A 29 mOhms - 20 V, 20 V 4.5 V 145 nC - 55 C + 150 C 305 W Enhancement Tube
STMicroelectronics MOSFET N-channel 600 V, 45 mOhm typ., 52 A MDmesh M2 Power MOSFET in a TO247-4 package 384库存量
最低: 1
倍数: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 52 A 45 mOhms - 25 V, 25 V 2 V 91 nC - 55 C + 150 C 350 W Enhancement MDmesh Tube

onsemi MOSFET 650V 76A NChn MOSFET SuperFET II, FRFET 417库存量
最低: 1
倍数: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 76 A 41 mOhms - 20 V, 20 V 3 V 229 nC - 55 C + 150 C 595 W Enhancement SuperFET II UniFET FRFET Tube
Infineon Technologies MOSFET HIGH POWER_NEW 140库存量
最低: 1
倍数: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 700 V 106 A 18 mOhms - 20 V, 20 V 4.5 V 234 nC - 55 C + 150 C 446 W Enhancement Tube
STMicroelectronics MOSFET N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in a TO247-4 packag 166库存量
最低: 1
倍数: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 84 A 29 mOhms - 25 V, 25 V 3 V 204 nC - 55 C + 150 C 450 W Enhancement MDmesh Tube
Infineon Technologies MOSFET HIGH POWER_NEW 220库存量
最低: 1
倍数: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 61 A 45 mOhms - 20 V, 20 V 3.5 V 90 nC - 55 C + 150 C 201 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET SILICON CARBIDE MOSFET 230库存量
240预期 2026/9/3
最低: 1
倍数: 1

SiC Through Hole TO-247-4 N-Channel 1 Channel 400 V 112 A 14.4 mOhms - 7 V, 23 V 4.5 V 85 nC - 55 C + 175 C 341 W Enhancement CoolSiC Tube
Infineon Technologies MOSFET SILICON CARBIDE MOSFET 240库存量
最低: 1
倍数: 1

SiC Through Hole TO-247-4 N-Channel 1 Channel 400 V 99 A 19.1 mOhms - 7 V, 23 V 4.5 V 62 nC - 55 C + 175 C 273 W Enhancement CoolSiC Tube
Infineon Technologies MOSFET SILICON CARBIDE MOSFET 215库存量
最低: 1
倍数: 1

SiC Through Hole TO-247-4 N-Channel 1 Channel 400 V 65 A 32.1 Ohms - 7 V, 23 V 4.5 V 36 nC - 55 C + 175 C 195 W Enhancement CoolSiC Tube
Infineon Technologies MOSFET SILICON CARBIDE MOSFET 240库存量
最低: 1
倍数: 1

SiC Through Hole TO-247-4 N-Channel 1 Channel 400 V 46 A 45.7 mOhms - 7 V, 23 V 4.5 V 26 nC - 55 C + 175 C 139 W Enhancement CoolSiC Tube
Infineon Technologies MOSFET SILICON CARBIDE MOSFET 225库存量
最低: 1
倍数: 1

SiC Through Hole TO-247-4 N-Channel 1 Channel 400 V 40 A 56.2 Ohms - 7 V, 23 V 4.5 V 21 nC - 55 C + 175 C 130 W Enhancement CoolSiC Tube
Infineon Technologies MOSFET AUTOMOTIVE_SICMOS 720库存量
最低: 1
倍数: 1

SiC Through Hole TO-247-4 N-Channel 1 Channel 750 V 163 A 10.6 mOhms - 5 V, 23 V 5.6 V 178 nC - 55 C + 175 C 517 W Enhancement AEC-Q101 CoolSiC Tube
Infineon Technologies MOSFET 600V CoolMOS CM8 Power Transistor 236库存量
最低: 1
倍数: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 123 A 16 mOhms - 20 V, 20 V 4.7 V 171 nC - 55 C + 150 C 521 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 532库存量
240预期 2026/9/17
最低: 1
倍数: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 64 A 37 mOhms - 20 V, 20 V 4.7 V 79 nC - 55 C + 150 C 329 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 1,183库存量
最低: 1
倍数: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 33 A 58 mOhms - 20 V, 20 V 3 V 64 nC - 55 C + 150 C 171 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 254库存量
最低: 1
倍数: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 76 A 30 mOhms - 20 V, 20 V 3 V 121 nC - 55 C + 150 C 255 W Enhancement CoolMOS Tube

onsemi MOSFET SF3 FRFET AUTO 27MOHM TO-247-4L 430库存量
最低: 1
倍数: 1

Si TO-247-4 Tube

onsemi MOSFET SUPERFET3 FRFET AUTOMOTIVE 110MOHM TO-247-4 385库存量
最低: 1
倍数: 1

Si TO-247-4 Tube
Infineon Technologies MOSFET SILICON CARBIDE MOSFET 240库存量
最低: 1
倍数: 1

SiC Through Hole TO-247-4 N-Channel 1 Channel 750 V 163 A 10.6 mOhms - 5 V, 23 V 5.6 V 178 nC - 55 C + 175 C 517 W Enhancement CoolSiC Tube
STMicroelectronics MOSFET N-channel 600 V, 61 mOhm typ., 39 A MDmesh M6 Power MOSFET in a TO247-4 package 48库存量
最低: 1
倍数: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 39 A 69 mOhms - 25 V, 25 V 3.25 V 57 nC - 55 C + 150 C 250 W Enhancement MDmesh Tube