Tube MOSFET

结果: 5,035
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 资格 商标名 封装
onsemi MOSFET 150V N-CHANNEL POWERTRENCH MOSFET 11,006库存量
¥51.1551
¥27.0974
¥24.6679
¥23.8882
最低: 1
倍数: 1
最大: 800
Si Through Hole TO-220-3 N-Channel 1 Channel 150 V 105 A 6.85 mOhms 20 V 4 V 64.5 nC - 55 C + 175 C 231 W Enhancement PowerTrench Tube
Infineon Technologies MOSFET CONSUMER 56,583库存量
¥13.56
¥6.4071
¥5.6952
¥4.6782
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 700 V 8.5 A 600 mOhms 16 V 2.5 V 10.5 nC - 40 C + 150 C 24.9 W Enhancement CoolMOS Tube
IXYS MOSFET 4500V 200mA HV Power MOSFET 402库存量
¥432.5188
¥332.6042
最低: 1
倍数: 1
Si Through Hole ISOPLUS-i4-PAK-3 N-Channel 1 Channel 4.5 kV 200 mA 625 Ohms 20 V 4 V 10.6 nC - 55 C + 150 C 78 W Enhancement Tube
IXYS MOSFET TO268 3KV 30A N-CH POLAR 417库存量
¥491.2449
¥384.5503
最低: 1
倍数: 1
Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 3 kV 2 A 21 Ohms 20 V 3 V - 55 C + 150 C 520 W Polar3 Tube

onsemi MOSFET SUPERFET3 FAST 650V TO247 827库存量
¥230.6104
¥166.675
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 75 A 19.3 mOhms 30 V 4 V 282 nC - 55 C + 150 C 625 W Enhancement Tube

onsemi MOSFET FAST 650V TO220 3,606库存量
¥86.5241
¥48.6352
最低: 1
倍数: 1
最大: 800
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 47 A 55 mOhms 30 V 4 V 96 nC - 55 C + 150 C 305 W Enhancement SuperFET III Tube
onsemi MOSFET SUPERFET3 FAST 165MOHM TO-220F 11,890库存量
¥45.8215
¥24.1481
¥21.922
¥20.9276
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 19 A 165 mOhms 30 V 4 V 35 nC - 55 C + 150 C 33 W Enhancement Tube
Vishay Semiconductors MOSFET N-Chan 500V 3.3 Amp 2,934库存量
¥20.5095
¥13.1532
¥9.0174
¥7.5823
最低: 1
倍数: 1
Si Through Hole TO-251-3 N-Channel 1 Channel 500 V 3.3 A 3 Ohms 30 V 2 V 17 nC - 55 C + 150 C 83 W Enhancement Tube
Toshiba MOSFET TO-220SIS PD=54W 1MHz PWR MOSFET TRNS 4,947库存量
¥37.7194
¥19.3569
¥17.5376
¥16.2155
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 100 A 4.3 mOhms 20 V 2.5 V 161 nC - 55 C + 175 C 54 W Enhancement U-MOSIX-H Tube
Infineon Technologies MOSFET HIGH POWER BEST IN CLASS 998库存量
¥101.0785
¥72.8737
¥60.9635
¥52.4433
¥51.3698
最低: 1
倍数: 1
Si Through Hole TO-220FP-3 N-Channel 1 Channel 650 V 18 A 40 mOhms 20 V 3 V 93 nC - 55 C + 150 C 35 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET IFX FET > 60-80V 1,990库存量
¥36.9736
¥21.6734
¥16.9613
¥14.6448
¥13.6504
最低: 1
倍数: 1
Si Through Hole N-Channel 1 Channel 80 V 196 A 1.6 mOhms 20 V 3.8 V 170 nC - 55 C + 175 C 300 W Enhancement Tube
Infineon Technologies MOSFET HIGH POWER_NEW 323库存量
¥85.7783
¥57.3249
¥53.0196
¥52.2738
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 50 A 40 mOhms 20 V 3 V 107 nC - 55 C + 150 C 227 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET IFX FET 60V 1,785库存量
¥22.1706
¥11.413
¥10.2604
¥8.3507
¥7.7518
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 194 A 1.6 mOhms 20 V 2.1 V 155 nC - 55 C + 175 C 250 W Enhancement Tube

Infineon Technologies MOSFET N-Ch 850V 54.9A TO247-3 254库存量
¥135.9842
¥77.2581
¥76.84
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 54.9 A 77 mOhms 20 V 2.1 V 288 nC - 55 C + 150 C 500 W Enhancement CoolMOS Tube

onsemi MOSFET 200V N-CHANNEL MOSFET 6,789库存量
¥33.8322
¥17.3681
¥15.7183
¥12.9046
¥12.8255
最低: 1
倍数: 1
最大: 1,000
Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 52 A 49 mOhms 30 V 3 V 63 nC - 55 C + 150 C 357 W Enhancement Tube

Infineon Technologies MOSFET N-Ch 850V 54.9A TO247-3 441库存量
¥137.3967
¥104.638
¥87.1795
¥77.6649
¥73.0432
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 54.9 A 77 mOhms 20 V 2.1 V 288 nC - 55 C + 150 C 500 W Enhancement Tube
Infineon Technologies MOSFET MOSFT PCh -55V -74A 20mOhm 120nC 5,975库存量
¥33.5836
¥17.0404
¥15.4697
¥12.656
最低: 1
倍数: 1
Si Through Hole TO-262-3 P-Channel 1 Channel 55 V 70 A 20 mOhms 20 V 2 V 180 nC - 55 C + 150 C 170 W Enhancement Tube

Infineon Technologies MOSFET N-Ch 600V 60A TO247-3 CoolMOS CPA 468库存量
¥149.8041
¥90.6599
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 60 A 45 mOhms 20 V 3 V 190 nC - 40 C + 150 C 431 W Enhancement AEC-Q100 CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER_LEGACY 803库存量
¥43.2564
¥28.3743
¥21.1762
¥17.6958
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 23.8 A 144 mOhms 20 V 3.5 V 44 nC - 55 C + 150 C 176 W Enhancement CoolMOS Tube
Vishay Semiconductors MOSFET 400V Vds 20V Vgs DPAK (TO-252) 8,025库存量
¥11.1644
¥5.2319
¥4.6443
¥3.6273
最低: 1
倍数: 1
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 400 V 3.1 A 1.8 Ohms 20 V 2 V 20 nC - 55 C + 150 C 42 W Enhancement Tube

onsemi MOSFET 400V N-Channel Advance Q-FET 1,589库存量
¥24.6453
¥12.3283
¥10.4186
¥9.0174
最低: 1
倍数: 1
最大: 1,000
Si Through Hole TO-220-3 N-Channel 1 Channel 400 V 11 A 530 mOhms 30 V 2 V 35 nC - 55 C + 150 C 135 W Enhancement QFET Tube
IXYS MOSFET 120 Amps 200V 0.022 Rds 150库存量
8,532在途量
¥145.6683
¥85.0325
¥83.2923
最低: 1
倍数: 1
Si Through Hole TO-264-3 N-Channel 1 Channel 200 V 120 A 22 mOhms 20 V 5 V 152 nC - 55 C + 175 C 714 W Enhancement HiPerFET Tube
IXYS MOSFET Disc Mosfet N-CH Linear L2 TO-247AD 324库存量
¥354.6053
¥302.4897
¥268.827
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 75 V 240 A 7 mOhms 20 V 2 V 546 nC - 55 C + 150 C 960 W Enhancement LinearL2 Tube
IXYS MOSFET 1 Amps 1200V 20 Rds 859库存量
¥58.1498
¥36.3973
¥30.849
¥27.3799
¥24.3176
最低: 1
倍数: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 1.2 kV 1 A 20 Ohms 20 V 4.5 V 17.6 nC - 55 C + 150 C 63 W Enhancement Tube

IXYS MOSFET 160A 300V 299库存量
¥201.7389
¥140.3686
¥131.5998
¥124.8198
最低: 1
倍数: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 160 A 19 mOhms 20 V 5 V 335 nC - 55 C + 150 C 1.39 kW Enhancement HiPerFET Tube