SiC MOSFET

结果: 23
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 技术 安装风格 封装 / 箱体 晶体管极性 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 资格 商标名 封装
Infineon Technologies MOSFET SILICON CARBIDE MOSFET 1,397库存量
1,800在途量
最低: 1
倍数: 1
: 1,800

SiC SMD/SMT HDSOP-16 N-Channel 1 Channel 400 V 144 A 14.4 mOhms - 7 V, 23 V 4.5 V 85 nC - 55 C + 175 C 429 W Enhancement CoolSiC Reel, Cut Tape
Infineon Technologies MOSFET SILICON CARBIDE MOSFET 1,670库存量
最低: 1
倍数: 1
: 2,000

SiC SMD/SMT HSOF-8 N-Channel 1 Channel 440 V 144 A 14.4 mOhms - 7 V, 23 V 4.5 V 85 nC - 55 C + 175 C 429 W Enhancement CoolSiC Reel, Cut Tape
Infineon Technologies MOSFET SILICON CARBIDE MOSFET 1,980库存量
最低: 1
倍数: 1
: 2,000

SiC SMD/SMT HSOF-8 N-Channel 1 Channel 440 V 111 A 19.1 mOhms - 7 V, 23 V 4.5 V 62 nC - 55 C + 175 C 341 W Enhancement CoolSiC Reel, Cut Tape
Infineon Technologies MOSFET SILICON CARBIDE MOSFET 1,758库存量
最低: 1
倍数: 1
: 1,800

SiC SMD/SMT HDSOP-16 N-Channel 1 Channel 400 V 111 A 19.1 mOhms - 7 V, 23 V 4.5 V 62 nC - 55 C + 175 C 341 W Enhancement CoolSiC Reel, Cut Tape
Infineon Technologies MOSFET SILICON CARBIDE MOSFET 1,799库存量
最低: 1
倍数: 1
: 1,800

SiC SMD/SMT HDSOP-16 N-Channel 1 Channel 400 V 50 A 45.7 mOhms - 7 V, 23 V 4.5 V 26 nC - 55 C + 175 C 167 W Enhancement CoolSiC Reel, Cut Tape
Infineon Technologies MOSFET SILICON CARBIDE MOSFET 1,795库存量
最低: 1
倍数: 1
: 1,800

SiC SMD/SMT HDSOP-16 N-Channel 1 Channel 400 V 43 A 56.2 mOhms - 7 V, 23 V 4.5 V 21 nC - 55 C + 175 C 150 W Enhancement CoolSiC Reel, Cut Tape
Infineon Technologies MOSFET SILICON CARBIDE MOSFET 1,975库存量
最低: 1
倍数: 1
: 2,000

SiC SMD/SMT HSOF-8 N-Channel 1 Channel 440 V 68 A 32.1 mOhms - 7 V, 23 V 4.5 V 36 nC - 55 C + 175 C 214 W CoolSiC Reel, Cut Tape
Infineon Technologies MOSFET SILICON CARBIDE MOSFET 306库存量
最低: 1
倍数: 1

SiC Through Hole TO-247-3 N-Channel 1 Channel 400 V 104 A 14.4 mOhms - 7 V, 23 V 4.5 V 85 nC - 55 C + 175 C 341 W Enhancement CoolSiC Tube
Infineon Technologies MOSFET SILICON CARBIDE MOSFET 179库存量
最低: 1
倍数: 1

SiC Through Hole TO-247-3 N-Channel 1 Channel 400 V 94 A 19.1 mOhms - 7 V, 23 V 4.5 V 62 nC - 55 C + 175 C 273 W Enhancement CoolSiC Tube
Infineon Technologies MOSFET SILICON CARBIDE MOSFET 218库存量
240预期 2026/9/3
最低: 1
倍数: 1

SiC Through Hole TO-247-4 N-Channel 1 Channel 400 V 112 A 14.4 mOhms - 7 V, 23 V 4.5 V 85 nC - 55 C + 175 C 341 W Enhancement CoolSiC Tube
Infineon Technologies MOSFET SILICON CARBIDE MOSFET 240库存量
最低: 1
倍数: 1

SiC Through Hole TO-247-4 N-Channel 1 Channel 400 V 99 A 19.1 mOhms - 7 V, 23 V 4.5 V 62 nC - 55 C + 175 C 273 W Enhancement CoolSiC Tube
Infineon Technologies MOSFET AUTOMOTIVE_SICMOS 720库存量
最低: 1
倍数: 1

SiC Through Hole TO-247-4 N-Channel 1 Channel 750 V 163 A 10.6 mOhms - 5 V, 23 V 5.6 V 178 nC - 55 C + 175 C 517 W Enhancement AEC-Q101 CoolSiC Tube
Infineon Technologies MOSFET SILICON CARBIDE MOSFET 223库存量
3,600预期 2026/10/1
最低: 1
倍数: 1
: 1,800

SiC SMD/SMT HDSOP-16 N-Channel 1 Channel 400 V 68 A 32.1 mOhms - 7 V, 23 V 4.5 V 36 nC - 55 C + 175 C 214 W Enhancement CoolSiC Reel, Cut Tape
Infineon Technologies MOSFET SILICON CARBIDE MOSFET 200库存量
240预期 2026/9/10
最低: 1
倍数: 1

SiC Through Hole TO-247-3 N-Channel 1 Channel 400 V 46 A 45.7 mOhms - 7 V, 23 V 4.5 V 26 nC - 55 C + 175 C 139 W Enhancement CoolSiC Tube
Infineon Technologies MOSFET SILICON CARBIDE MOSFET 203库存量
240预期 2026/12/24
最低: 1
倍数: 1

SiC Through Hole TO-247-3 N-Channel 1 Channel 400 V 40 A 56.2 mOhms - 7 V, 23 V 4.5 V 21 nC - 55 C + 175 C 130 W Enhancement CoolSiC Tube
Infineon Technologies MOSFET SILICON CARBIDE MOSFET 205库存量
240预期 2026/9/10
最低: 1
倍数: 1

SiC Through Hole TO-247-4 N-Channel 1 Channel 400 V 65 A 32.1 Ohms - 7 V, 23 V 4.5 V 36 nC - 55 C + 175 C 195 W Enhancement CoolSiC Tube
Infineon Technologies MOSFET SILICON CARBIDE MOSFET 240库存量
最低: 1
倍数: 1

SiC Through Hole TO-247-4 N-Channel 1 Channel 400 V 46 A 45.7 mOhms - 7 V, 23 V 4.5 V 26 nC - 55 C + 175 C 139 W Enhancement CoolSiC Tube
Infineon Technologies MOSFET SILICON CARBIDE MOSFET 225库存量
最低: 1
倍数: 1

SiC Through Hole TO-247-4 N-Channel 1 Channel 400 V 40 A 56.2 Ohms - 7 V, 23 V 4.5 V 21 nC - 55 C + 175 C 130 W Enhancement CoolSiC Tube
Infineon Technologies MOSFET HIGH POWER_NEW 693库存量
最低: 1
倍数: 1
: 750

SiC SMD/SMT HDSOP-22 N-Channel 1 Channel 600 V 135 A 16 mOhms - 20 V, 20 V 4.7 V 171 nC - 55 C + 150 C 625 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET SILICON CARBIDE MOSFET 240库存量
最低: 1
倍数: 1

SiC Through Hole TO-247-4 N-Channel 1 Channel 750 V 163 A 10.6 mOhms - 5 V, 23 V 5.6 V 178 nC - 55 C + 175 C 517 W Enhancement CoolSiC Tube
Microchip Technology MOSFET MOSFET SIC 1200 V 17 mOhm TO-247 141库存量
最低: 1
倍数: 1

SiC Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 113 A 22 mOhms - 10 V, 23 V 2.7 V - 55 C + 175 C 455 W Tube
Infineon Technologies MOSFET SILICON CARBIDE MOSFET 8库存量
720预期 2026/9/9
最低: 1
倍数: 1

SiC Through Hole TO-247-3 N-Channel 1 Channel 400 V 65 A 32.1 mOhms - 7 V, 23 V 4.5 V 36 nC - 55 C + 175 C 195 W Enhancement CoolSiC Tube
IXYS MOSFET 200V < 2mohm X4 n-channel MOSFET in SMPD -X
480在途量
最低: 1
倍数: 1

SiC SMD/SMT SMPD-24 N-Channel 1 Channel 200 V 480 A 1.99 mOhms - 20 V, 20 V 4.5 V 535 nC - 55 C + 175 C 1.07 kW Enhancement Tube