|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF POWER TRANS
- PD55008-E
- STMicroelectronics
-
1:
¥136.2328
-
1,322库存量
|
Mouser 零件编号
511-PD55008-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF POWER TRANS
|
|
1,322库存量
|
|
最低: 1
倍数: 1
|
|
RF MOSFETs
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
LDMOS FET
|
Si
|
1 GHz
|
8 W
|
- 65 C
|
+ 150 C
|
17 dB
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Pwr Transistors LDMOST Plastic N Ch
- PD54008-E
- STMicroelectronics
-
1:
¥128.707
-
1,533库存量
|
Mouser 零件编号
511-PD54008-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Pwr Transistors LDMOST Plastic N Ch
|
|
1,533库存量
|
|
最低: 1
倍数: 1
|
|
RF MOSFETs
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
LDMOS FET
|
Si
|
1 GHz
|
8 W
|
- 65 C
|
+ 150 C
|
11.5 dB
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
- PD54008L-E
- STMicroelectronics
-
1:
¥70.7267
-
3,425库存量
|
Mouser 零件编号
511-PD54008L-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
|
|
3,425库存量
|
|
最低: 1
倍数: 1
:
3,000
|
|
RF MOSFETs
|
SMD/SMT
|
PowerFLAT (5x5)
|
LDMOS FET
|
Si
|
1 GHz
|
8 W
|
- 65 C
|
+ 150 C
|
15 dB
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
- PD55015S-E
- STMicroelectronics
-
1:
¥210.2591
-
228库存量
|
Mouser 零件编号
511-PD55015S-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
|
|
228库存量
|
|
最低: 1
倍数: 1
|
|
RF MOSFETs
|
SMD/SMT
|
PowerSO-10RF-Straight-4
|
LDMOS FET
|
Si
|
1 GHz
|
15 W
|
- 65 C
|
+ 150 C
|
14 dB
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 N-Ch, 12.5V 15W3 Transistor, LDMOST
- PD55015TR-E
- STMicroelectronics
-
1:
¥183.4668
-
573库存量
|
Mouser 零件编号
511-PD55015TR-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 N-Ch, 12.5V 15W3 Transistor, LDMOST
|
|
573库存量
|
|
最低: 1
倍数: 1
:
600
|
|
RF MOSFETs
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
LDMOS FET
|
Si
|
1 GHz
|
15 W
|
- 65 C
|
+ 150 C
|
14 dB
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 HF/VHF/UHF RF N-Ch 300W 15dB 175MHz
- SD2932BW
- STMicroelectronics
-
1:
¥1,805.7739
-
35库存量
|
Mouser 零件编号
511-SD2932BW
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 HF/VHF/UHF RF N-Ch 300W 15dB 175MHz
|
|
35库存量
|
|
最低: 1
倍数: 1
|
|
RF MOSFETs
|
Screw Mount
|
|
|
Si
|
250 MHz
|
300 W
|
|
+ 200 C
|
15 dB
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor
- RF5L08350CB4
- STMicroelectronics
-
1:
¥1,454.4795
-
110库存量
-
NRND
|
Mouser 零件编号
511-RF5L08350CB4
NRND
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor
|
|
110库存量
|
|
最低: 1
倍数: 1
:
120
|
|
RF MOSFETs
|
SMD/SMT
|
B4E-5
|
LDMOS FET
|
Si
|
1 GHz
|
400 W
|
|
+ 200 C
|
19 dB
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 120 W 50 V RF power LDMOS transistor from HF to 1.5 GHz
- RF5L15120CB4
- STMicroelectronics
-
1:
¥1,615.109
-
18库存量
-
NRND
|
Mouser 零件编号
511-RF5L15120CB4
NRND
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 120 W 50 V RF power LDMOS transistor from HF to 1.5 GHz
|
|
18库存量
|
|
最低: 1
倍数: 1
:
100
|
|
RF MOSFETs
|
SMD/SMT
|
LBB-5
|
LDMOS FET
|
Si
|
1 GHz
|
120 W
|
|
+ 200 C
|
20 dB
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 180 W, 28 V, 1.3 to 1.6 GHz RF power LDMOS transistor
- RF2L16180CB4
- STMicroelectronics
-
1:
¥1,454.4795
-
20库存量
-
NRND
|
Mouser 零件编号
511-RF2L16180CB4
NRND
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 180 W, 28 V, 1.3 to 1.6 GHz RF power LDMOS transistor
|
|
20库存量
|
|
最低: 1
倍数: 1
:
120
|
|
RF MOSFETs
|
SMD/SMT
|
B4E-5
|
LDMOS FET
|
Si
|
1.6 GHz
|
180 W
|
|
+ 200 C
|
14 dB
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF POWER TRANS
- PD55003-E
- STMicroelectronics
-
1:
¥93.8804
-
5,095库存量
|
Mouser 零件编号
511-PD55003-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF POWER TRANS
|
|
5,095库存量
|
|
最低: 1
倍数: 1
|
|
RF MOSFETs
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
LDMOS FET
|
Si
|
1 GHz
|
3 W
|
- 65 C
|
+ 150 C
|
17 dB
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Pwr Transistors LDMOST Plastic N Ch
- PD57030-E
- STMicroelectronics
-
1:
¥412.5065
-
490库存量
|
Mouser 零件编号
511-PD57030-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Pwr Transistors LDMOST Plastic N Ch
|
|
490库存量
|
|
最低: 1
倍数: 1
|
|
RF MOSFETs
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
LDMOS FET
|
Si
|
1 GHz
|
30 W
|
- 65 C
|
+ 150 C
|
14 dB
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF PWR N-Ch MOS 150W 14dB 175MHz
- SD2931-10W
- STMicroelectronics
-
1:
¥774.5472
-
606库存量
-
950预期 2026/10/1
|
Mouser 零件编号
511-SD2931-10W
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF PWR N-Ch MOS 150W 14dB 175MHz
|
|
606库存量
950预期 2026/10/1
|
|
最低: 1
倍数: 1
|
|
RF MOSFETs
|
SMD/SMT
|
M174
|
|
Si
|
230 MHz
|
150 W
|
|
+ 150 C
|
15 dB
|
Bulk
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF PWR N-Ch MOS 350W 15dB 175MHz
- SD2942W
- STMicroelectronics
-
1:
¥1,625.2903
-
113库存量
|
Mouser 零件编号
511-SD2942W
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF PWR N-Ch MOS 350W 15dB 175MHz
|
|
113库存量
|
|
最低: 1
倍数: 1
|
|
RF MOSFETs
|
Screw Mount
|
|
|
Si
|
175 MHz
|
350 W
|
|
+ 200 C
|
15 dB
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.
- PD55003TR-E
- STMicroelectronics
-
1:
¥74.5235
-
288库存量
|
Mouser 零件编号
511-PD55003TR-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.
|
|
288库存量
|
|
最低: 1
倍数: 1
:
600
|
|
RF MOSFETs
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
LDMOS FET
|
Si
|
1 GHz
|
3 W
|
- 65 C
|
+ 150 C
|
17 dB
|
Reel, Cut Tape, MouseReel
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
- PD55015-E
- STMicroelectronics
-
1:
¥192.3147
-
133库存量
|
Mouser 零件编号
511-PD55015-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
|
|
133库存量
|
|
最低: 1
倍数: 1
|
|
RF MOSFETs
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
LDMOS FET
|
Si
|
1 GHz
|
15 W
|
- 65 C
|
+ 150 C
|
14 dB
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
- PD55025S-E
- STMicroelectronics
-
1:
¥263.7759
-
102库存量
|
Mouser 零件编号
511-PD55025S-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
|
|
102库存量
|
|
最低: 1
倍数: 1
|
|
RF MOSFETs
|
SMD/SMT
|
PowerSO-10RF-Straight-4
|
LDMOS FET
|
Si
|
1 GHz
|
25 W
|
- 65 C
|
+ 150 C
|
14.5 dB
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
- PD57018-E
- STMicroelectronics
-
1:
¥257.9903
-
461库存量
|
Mouser 零件编号
511-PD57018-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER RF Transistor
|
|
461库存量
|
|
最低: 1
倍数: 1
|
|
RF MOSFETs
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
LDMOS FET
|
Si
|
1 GHz
|
18 W
|
- 65 C
|
+ 150 C
|
16.5 dB
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Pwr Transistors LDMOST Plastic Fam
- PD57060-E
- STMicroelectronics
-
1:
¥529.1338
-
55库存量
-
1,200在途量
|
Mouser 零件编号
511-PD57060-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Pwr Transistors LDMOST Plastic Fam
|
|
55库存量
1,200在途量
在途量:
400 预期 2026/10/8
800 预期 2026/10/14
|
|
最低: 1
倍数: 1
|
|
RF MOSFETs
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
LDMOS FET
|
Si
|
1 GHz
|
60 W
|
- 65 C
|
+ 150 C
|
14.3 dB
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F. N-Ch Trans
- PD85035-E
- STMicroelectronics
-
1:
¥273.2905
-
343库存量
|
Mouser 零件编号
511-PD85035-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F. N-Ch Trans
|
|
343库存量
|
|
最低: 1
倍数: 1
|
|
RF MOSFETs
|
SMD/SMT
|
PowerSO-12
|
LDMOS FET
|
Si
|
870 MHz
|
35 W
|
- 65 C
|
+ 165 C
|
14.9 dB
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF PWR N-Ch MOS 150W 14dB 175MHz
- SD2931-11W
- STMicroelectronics
-
1:
¥708.8716
-
117库存量
-
200预期 2026/11/7
|
Mouser 零件编号
511-SD2931-11W
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF PWR N-Ch MOS 150W 14dB 175MHz
|
|
117库存量
200预期 2026/11/7
|
|
最低: 1
倍数: 1
|
|
RF MOSFETs
|
Screw Mount
|
|
|
Si
|
175 MHz
|
150 W
|
|
+ 200 C
|
14 dB
|
Bulk
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 N-Ch MOS HF/VHF/ RF 300W 15dB 175MHz
- SD2932W
- STMicroelectronics
-
1:
¥1,709.8256
-
80库存量
|
Mouser 零件编号
511-SD2932W
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 N-Ch MOS HF/VHF/ RF 300W 15dB 175MHz
|
|
80库存量
|
|
最低: 1
倍数: 1
|
|
RF MOSFETs
|
SMD/SMT
|
M244
|
|
Si
|
250 MHz
|
300 W
|
|
+ 150 C
|
16 dB
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 300W - 50V Moisture Resistnt HF/VHF DMOS
- SD4933MR
- STMicroelectronics
-
1:
¥1,370.1928
-
106库存量
-
300在途量
|
Mouser 零件编号
511-SD4933MR
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 300W - 50V Moisture Resistnt HF/VHF DMOS
|
|
106库存量
300在途量
在途量:
150 预期 2026/10/12
150 预期 2027/9/24
|
|
最低: 1
倍数: 1
|
|
RF MOSFETs
|
SMD/SMT
|
M177MR-5
|
DMOS FET
|
Si
|
100 MHz
|
300 W
|
- 65 C
|
+ 150 C
|
24 dB
|
Tray
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 300W 50V RF MOS 21dB 175MHz N-Ch
- STAC2942BW
- STMicroelectronics
-
1:
¥1,198.5571
-
101库存量
|
Mouser 零件编号
511-STAC2942BW
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 300W 50V RF MOS 21dB 175MHz N-Ch
|
|
101库存量
|
|
最低: 1
倍数: 1
|
|
RF MOSFETs
|
SMD/SMT
|
STAC244B
|
|
Si
|
250 MHz
|
350 W
|
- 65 C
|
+ 150 C
|
21 dB
|
Bulk
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF POWER transistor LDMOST family N-Chan
- PD54003-E
- STMicroelectronics
-
1:
¥107.9489
-
105库存量
|
Mouser 零件编号
511-PD54003-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF POWER transistor LDMOST family N-Chan
|
|
105库存量
|
|
最低: 1
倍数: 1
|
|
RF MOSFETs
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
LDMOS FET
|
Si
|
1 GHz
|
3 W
|
- 65 C
|
+ 150 C
|
12 dB
|
Tube
|
|
|
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.
- PD55008TR-E
- STMicroelectronics
-
1:
¥128.707
-
129库存量
-
600预期 2026/11/27
|
Mouser 零件编号
511-PD55008TR-E
|
STMicroelectronics
|
射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.
|
|
129库存量
600预期 2026/11/27
|
|
最低: 1
倍数: 1
:
600
|
|
RF MOSFETs
|
SMD/SMT
|
PowerSO-10RF-Formed-4
|
LDMOS FET
|
Si
|
1 GHz
|
8 W
|
- 65 C
|
+ 150 C
|
17 dB
|
Reel, Cut Tape, MouseReel
|
|