Tube 碳化硅MOSFET

结果: 625
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 安装风格 封装 / 箱体 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 资格 商标名
onsemi 碳化硅MOSFET 650V/7MOSICFETG3TO247-4 445库存量
¥674.3162
¥579.0346
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 650 V 120 A 9 mOhms - 12 V, + 12 V 6 V 214 nC - 55 C + 175 C 789 W Enhancement AEC-Q101 SiC FET
onsemi 碳化硅MOSFET 1200V/16MOSICFETG3TO24 466库存量
¥613.6126
¥504.6015
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 1.2 kV 107 A 21 mOhms - 20 V, + 20 V 4 V 218 nC - 55 C + 175 C 517 W Enhancement AEC-Q101 SiC FET
Microchip Technology 碳化硅MOSFET MOSFET SIC 1200 V 25 mOhm TO-247-4 252库存量
¥341.8702
¥315.3152
¥274.364
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 1.2 kV 103 A 31 mOhms - 10 V, + 23 V 1.8 V 232 nC - 55 C + 175 C 500 W Enhancement
ROHM Semiconductor 碳化硅MOSFET RECT 1.2KV 40A RDL SIC SKY 722库存量
¥205.9651
¥153.8495
最低: 1
倍数: 1
Through Hole TO-247N-3 1 Channel 1.2 kV 40 A 80 mOhms - 6 V, + 22 V 4 V 106 nC + 175 C 262 W Enhancement
ROHM Semiconductor 碳化硅MOSFET 1200V 72A 339W SIC 30mOhm TO-247N
345库存量
¥610.6972
¥549.9823
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 1.2 kV 72 A 39 mOhms - 4 V, + 22 V 5.6 V 131 nC - 55 C + 175 C 339 W Enhancement AEC-Q101
ROHM Semiconductor 碳化硅MOSFET TO247 1.2KV 26A N-CH SIC 704库存量
¥108.7738
¥71.303
¥66.3423
¥66.0937
¥65.5965
最低: 1
倍数: 1
Through Hole TO-247N-3 1 Channel 1.2 kV 26 A 81 mOhms - 4 V, + 21 V 4.8 V 64 nC + 175 C 115 W Enhancement

onsemi 碳化硅MOSFET SIC MOS TO247-3L 650V 1,046库存量
¥158.313
¥111.9943
最低: 1
倍数: 1
最大: 450
Through Hole TO-247-3 1 Channel 650 V 99 A 28.5 mOhms - 8 V, + 22 V 4.3 V 164 nC - 55 C + 175 C 348 W Enhancement EliteSiC
onsemi 碳化硅MOSFET 650V/80MOSICFETG3TO220-3 472库存量
¥101.7904
¥60.0143
¥55.4152
¥51.6749
最低: 1
倍数: 1
Through Hole TO-220-3 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET

onsemi 碳化硅MOSFET SIC MOS TO247-4L 650V 1,589库存量
¥100.0841
¥69.3142
¥67.913
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 650 V 55 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 187 W Enhancement EliteSiC
onsemi 碳化硅MOSFET 1200V/40MOSICFETG3TO24 381库存量
¥318.4001
¥236.7576
¥224.6101
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 1.2 kV 65 A 45 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 429 W Enhancement AEC-Q101 SiC FET
IXYS 碳化硅MOSFET TO247 1.7KV 4.4A N-CH SIC 1,766库存量
¥76.3428
¥45.6633
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 1.7 kV 6.2 A 1 Ohms - 5 V, + 20 V 4 V 13 nC - 55 C + 175 C 60 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TO247 750V 56A N-CH SIC 623库存量
¥168.9011
¥106.2878
¥104.5476
最低: 1
倍数: 1
Through Hole TO-247N-3 1 Channel 750 V 56 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 176 W Enhancement
Wolfspeed 碳化硅MOSFET SiC, MOSFET, 40mohm, 1200V, TO-263-7XL, Industrial 661库存量
¥107.3613
¥60.794
¥60.2968
¥59.9691
¥56.0819
最低: 1
倍数: 1
SMD/SMT 1 Channel 1.2 kV 64 A 53.5 mOhms - 8 V, + 19 V 3.6 V 94 nC - 40 C + 150 C 272 W Enhancement
Wolfspeed 碳化硅MOSFET SiC, MOSFET 45mohm, 650V TO-263-7XL, Industrial 601库存量
¥88.5016
¥49.1324
¥46.8159
¥46.5673
¥43.505
最低: 1
倍数: 1
SMD/SMT 1 Channel 650 V 47 A 60 mOhms - 8 V, + 19 V 3.6 V 61 nC - 40 C + 150 C 147 W Enhancement
onsemi 碳化硅MOSFET SIC MOS TO247-4L 30MOHM 1200V M3 121库存量
¥228.8702
¥150.1318
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 1.2 kV 60 A 28.5 mOhms - 8 V, + 22 V 3.13 V 107 nC - 55 C + 175 C 308 W Enhancement EliteSiC
onsemi 碳化硅MOSFET 650V/30MOSICFETG3TO220-3 902库存量
¥222.8586
¥143.3066
最低: 1
倍数: 1
Through Hole TO-220-3 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 5 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi 碳化硅MOSFET 650V/40MOSICFETG3TO247-3 1,166库存量
¥169.4435
¥101.0107
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 650 V 54 A 42 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 326 W Enhancement AEC-Q101 SiC FET
onsemi 碳化硅MOSFET 1200V/40MOSICFETG3TO247-4 612库存量
¥256.2953
¥170.1441
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 1.2 kV 65 A 45 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 429 W Enhancement AEC-Q101 SiC FET
ROHM Semiconductor 碳化硅MOSFET 650V 70A 262W SIC 30mOhm TO-247N
366库存量
¥409.5233
¥340.0509
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 650 V 70 A 39 mOhms - 4 V, + 22 V 5.6 V 104 nC - 55 C + 175 C 262 W Enhancement AEC-Q101

onsemi 碳化硅MOSFET SIC MOS TO247-3L 650V 497库存量
¥83.8686
¥55.6638
¥52.4433
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 650 V 47 A 70 mOhms - 8 V, + 22 V 4.3 V 74 nC - 55 C + 175 C 176 W Enhancement EliteSiC
Infineon Technologies 碳化硅MOSFET SIC_DISCRETE 283库存量
¥296.7041
¥231.1867
¥229.7064
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 1.2 kV 52 A 35 mOhms - 7 V, + 23 V 4.5 V 59 nC - 55 C + 175 C 228 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package 368库存量
¥72.8737
¥36.1487
¥33.7531
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 1.2 kV 19 A 182 mOhms - 7 V, + 23 V 5.7 V 13 nC - 55 C + 150 C 94 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SIC_DISCRETE 722库存量
¥181.6475
¥133.1705
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 1.2 kV 52 A 59 mOhms - 7 V, + 20 V 5.7 V 57 nC - 55 C + 175 C 228 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package 480库存量
¥126.0628
¥83.2132
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 1.2 kV 56 A 40 mOhms - 7 V, + 23 V 5.7 V 63 nC - 55 C + 150 C 227 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 335库存量
¥76.9304
¥53.9349
¥49.8782
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 650 V 50 A 50 mOhms - 5 V, + 23 V 5.7 V 41 nC - 55 C + 175 C 176 W Enhancement