Tube 碳化硅MOSFET

结果: 625
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 安装风格 封装 / 箱体 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 资格 商标名
APC-E 碳化硅MOSFET 650V 50mR, TO-247-4L, Automotive Grade 264库存量
¥66.3423
¥46.7368
¥37.7194
¥31.7643
¥29.6964
最低: 1
倍数: 1
Through Hole TO-247-4L 1 Channel 650 V 44 A 65 mOhms - 10 V, 25 V 4.2 V 45 nC - 55 C + 175 C 198 W Enhancement
APC-E 碳化硅MOSFET 1200V 75mR, TO-247-4L, Automotive Grade 284库存量
¥67.1672
¥44.9175
¥36.0696
¥30.849
¥28.3743
最低: 1
倍数: 1
Through Hole TO-247-4L 1 Channel 1.2 kV 27 A 98 mOhms - 10 V, 25 V 4.2 V 40 nC - 55 C + 175 C 151 W Enhancement
ROHM Semiconductor 碳化硅MOSFET Transistor SiC MOSFET 1200V 40mO 3rd Gen TO-247-4L 565库存量
¥193.3091
¥140.5381
¥140.3686
¥139.6228
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 1.2 kV 55 A 52 mOhms - 4 V, + 22 V 5.6 V 107 nC 262 W Enhancement

onsemi 碳化硅MOSFET SIC MOS TO247-4L 40MOHM 1200V M3 1,007库存量
¥113.0678
¥77.2581
¥75.597
最低: 1
倍数: 1
最大: 450
Through Hole TO-247-4 1 Channel 1.2 kV 51 A 52 mOhms - 10 V, + 22 V 4.4 V 70 nC - 55 C + 175 C 329 W Enhancement EliteSiC

onsemi 碳化硅MOSFET SIC MOSFET 900V TO247-4L 20MOHM 2,221库存量
¥226.3955
¥167.7485
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 900 V 118 A 28 mOhms - 8 V, + 22 V 4.3 V 196 nC - 55 C + 175 C 484 W Enhancement EliteSiC

onsemi 碳化硅MOSFET SIC MOS TO247-4L 14MOHM 1200V 432库存量
¥247.1536
¥176.5964
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 1.2 kV 127 A 20 mOhms - 10 V, + 22 V 4.63 V 329 nC - 55 C + 175 C 686 W Enhancement EliteSiC
onsemi 碳化硅MOSFET 1200V/9MOSICFETG3TO247 366库存量
¥620.4717
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 1.2 kV 120 A 11 mOhms - 20 V, + 20 V 4 V 234 nC - 55 C + 175 C 789 W Enhancement AEC-Q101 SiC FET

onsemi 碳化硅MOSFET SIC MOS TO247-3L 650V 639库存量
¥73.0432
¥48.3866
¥44.6689
¥44.3412
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 650 V 38 A 85 mOhms - 8 V, + 22 V 4.3 V 61 nC - 55 C + 175 C 148 W Enhancement EliteSiC
onsemi 碳化硅MOSFET 650V/40MOSICFETG3TO247-4 3,278库存量
¥171.9747
¥102.9204
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 650 V 54 A 52 mOhms - 25 V, + 25 V 4 V 43 nC - 55 C + 175 C 326 W Enhancement AEC-Q101 SiC FET

onsemi 碳化硅MOSFET SIC MOS TO247-4L 40MOHM 1200V 1,343库存量
¥174.9466
¥123.3282
最低: 1
倍数: 1
最大: 450
Through Hole TO-247-4 1 Channel 1.2 kV 58 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 319 W Enhancement EliteSiC

onsemi 碳化硅MOSFET SIC MOS TO247-3L 160MOHM 1200V 2,372库存量
¥112.0847
¥62.4551
¥60.0482
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 1.2 kV 17 A 224 mOhms - 15 V, + 25 V 4.3 V 34 nC - 55 C + 175 C 119 W Enhancement EliteSiC
ROHM Semiconductor 碳化硅MOSFET N-Ch 1200V SiC 31A 80mOhm TrenchMOS 1,034库存量
¥197.8517
¥124.8198
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 1.2 kV 31 A 104 mOhms - 4 V, + 22 V 5.6 V 60 nC - 55 C + 175 C 165 W Enhancement

onsemi 碳化硅MOSFET SIC 1700V MOS 28MO IN TO247-4L 752库存量
¥345.0116
¥281.5621
¥248.7243
最低: 1
倍数: 1
最大: 450
Through Hole TO-247-4 1 Channel 1.7 kV 81 A 40 mOhms - 15 V, + 25 V 4.3 V 200 nC - 55 C + 175 C 535 W Enhancement EliteSiC


Infineon Technologies 碳化硅MOSFET CoolSiC 1200 V, 14 mohm SiC Trench MOSFET in TO247-3 package 1,149库存量
¥245.1648
¥163.7822
最低: 1
倍数: 1
Through Hole 1 Channel 1.2 kV 127 A 14 mOhms - 10 V, + 23 V 4.2 V 110 nC - 55 C + 150 C 455 W Enhancement
Diodes Incorporated DMWSH120H37SM4
Diodes Incorporated 碳化硅MOSFET SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS 30库存量
¥155.4202
¥116.1301
¥95.2929
¥92.7278
¥89.9932
最低: 1
倍数: 1
onsemi 碳化硅MOSFET 650V/30MOSICFETG3TO220-3 425库存量
1,000预期 2026/12/28
¥230.9381
¥184.9019
¥159.895
¥143.3066
最低: 1
倍数: 1
最大: 1,000
Through Hole TO-220-3 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi 碳化硅MOSFET SIC MOS TO247-3L 23MOHM 650V M3S 23库存量
2,700在途量
¥103.0673
¥66.67
¥52.8501
¥51.6975
最低: 1
倍数: 1
最大: 450
Through Hole TO-247-3 1 Channel 650 V 40 A 18 mOhms - 8 V, + 22 V 4 V 262 nC - 55 C + 175 C 263 W Enhancement EliteSiC
SemiQ 碳化硅MOSFET 1200V, 40mOhm, TO-263-7L MOSFET 25库存量
¥105.542
¥76.3428
¥63.5286
¥56.6582
¥52.9405
最低: 1
倍数: 1
SMD/SMT TO-263-7 1 Channel 1.2 kV 66 A 38 mOhms - 10 V, + 25 V 4 V 112 nC - 55 C + 175 C 357 W Enhancement
ROHM Semiconductor 碳化硅MOSFET Transistor SiC MOSFET 650V 30mO 3rd Gen TO-247-4L 745库存量
¥188.597
¥136.1537
¥136.0633
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 650 V 70 A 39 mOhms - 4 V, + 22 V 5.6 V 104 nC + 175 C 262 W Enhancement
onsemi 碳化硅MOSFET SIC MOS TO247-4L 70MOHM 1200V M3 217库存量
¥144.1767
¥82.4674
¥82.1397
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 1.2 kV 29 A 64.8 mOhms - 8 V, + 22 V 3.37 V 47.9 nC - 55 C + 175 C 163 W Enhancement EliteSiC
ROHM Semiconductor 碳化硅MOSFET Transistor SiC MOSFET 650V 60mO 3rd Gen TO-247-4L 888库存量
¥112.7401
¥78.9983
¥78.3316
¥69.7323
¥66.0937
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 650 V 39 A 78 mOhms - 4 V, + 22 V 5.6 V 58 nC + 175 C 165 W Enhancement
onsemi 碳化硅MOSFET 650V/80MOSICFETG3TO247-3 639库存量
¥108.9094
¥61.2347
¥56.7147
¥54.3643
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 650 V 31 A 100 mOhms - 12 V, + 12 V 6 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
ROHM Semiconductor 碳化硅MOSFET N-Ch 1200V SiC 72A 30mOhm TrenchMOS 683库存量
¥668.847
¥578.5148
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 1.2 kV 72 A 39 mOhms - 4 V, + 22 V 5.6 V 131 nC - 55 C + 175 C 339 W Enhancement
ROHM Semiconductor 碳化硅MOSFET 1200V 55A 262W SIC 40mOhm TO-247N
460库存量
¥433.7618
¥367.4195
¥359.3174
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 1.2 kV 55 A 52 mOhms - 4 V, + 22 V 5.6 V 107 nC - 55 C + 175 C 262 W Enhancement AEC-Q101
ROHM Semiconductor 碳化硅MOSFET Transistor SiC MOSFET 650V 80mO 3rd Gen TO-247-4L 852库存量
¥95.2025
¥66.0937
¥56.4096
¥56.0028
¥53.0196
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 650 V 30 A 104 mOhms - 4 V, + 22 V 5.6 V 48 nC + 175 C 134 W Enhancement