Tube 碳化硅MOSFET

结果: 625
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS ECAD模型 安装风格 封装 / 箱体 通道数量 Vds-漏源极击穿电压 Id-连续漏极电流 Rds On-漏源导通电阻 Vgs - 栅极-源极电压 Vgs th-栅源极阈值电压 Qg-栅极电荷 最小工作温度 最大工作温度 Pd-功率耗散 通道模式 资格 商标名
Infineon Technologies 碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package 480库存量
¥126.0628
¥83.2132
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 1.2 kV 56 A 40 mOhms - 7 V, + 23 V 5.7 V 63 nC - 55 C + 150 C 227 W Enhancement CoolSiC
Infineon Technologies 碳化硅MOSFET SILICON CARBIDE MOSFET 335库存量
¥76.9304
¥53.9349
¥49.8782
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 650 V 50 A 50 mOhms - 5 V, + 23 V 5.7 V 41 nC - 55 C + 175 C 176 W Enhancement
Infineon Technologies 碳化硅MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package 368库存量
¥52.1156
¥36.1487
¥33.335
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 1.2 kV 19 A 182 mOhms - 7 V, + 23 V 5.7 V 13 nC - 55 C + 150 C 94 W Enhancement CoolSiC

onsemi 碳化硅MOSFET SIC MOS 80MW 1200 V 80 mOhms 44A 1,182库存量
¥135.3288
¥92.5583
¥87.349
¥84.3658
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 1.2 kV 31 A 110 mOhms - 15 V, + 25 V 4.3 V 56 nC - 55 C + 175 C 178 W Enhancement AEC-Q101 EliteSiC
Infineon Technologies 碳化硅MOSFET CoolSiC 1200 V, 40 mohm SiC Trench MOSFET in TO247-4 package 947库存量
¥120.7631
¥79.9814
¥66.8395
¥64.4326
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 1.2 kV 55 A 39 mOhms - 10 V, + 23 V 4.2 V 39 nC - 55 C + 150 C 227 W Enhancement
Central Semiconductor 碳化硅MOSFET 1700V Through-Hole MOSFET N-Channel SiC 17库存量
¥327.1463
¥267.6744
¥236.4864
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 1.7 kV 26 A 40 mOhms 20 V 2.4 V - 55 C + 175 C 28 W Depletion


Diodes Incorporated 碳化硅MOSFET SiC MOSFET BVDSS: >1000V TO263-7 TUBE 50PCS 15库存量
¥105.0448
¥78.2525
¥58.3984
¥56.6582
¥55.0084
最低: 1
倍数: 1
SMD/SMT TO-263-7 1 Channel 1.2 kV 38.2 A 90 mOhms - 4 V, + 15 V 3.5 V 54.6 nC - 55 C + 175 C 197 W Enhancement
Infineon Technologies 碳化硅MOSFET SiC MOSFET, 750 V 629库存量
¥318.8747
¥260.2277
¥229.8646
最低: 1
倍数: 1
Through Hole PG-TO-247-4 1 Channel 750 V 172 A 9 mOhms - 7 V, + 23 V 5.6 V 169 nC - 55 C + 175 C 483 W Enhancement CoolSiC
onsemi 碳化硅MOSFET 650V/80MOSICFETG3TO220-3 137库存量
2,000预期 2027/1/22
¥96.0613
¥66.9638
最低: 1
倍数: 1
最大: 1,000
Through Hole TO-220-3 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
IXYS 碳化硅MOSFET 1700V/750mohm SiC MOSFET TO-263-7L 53库存量
¥89.9141
¥52.3642
¥52.2738
¥51.9461
¥48.5561
最低: 1
倍数: 1
SMD/SMT D2PAK-7 (TO-263-7) 1 Channel 1.7 kV 6.4 A 750 mOhms - 20 V, + 20 V 1.8 V 11 nC - 55 C + 175 C 65 W Enhancement
SemiQ 碳化硅MOSFET 1200V, 80mOhm, TO-263-7L MOSFET 6库存量
¥68.0712
¥47.9798
¥38.7138
¥34.4085
¥30.5213
最低: 1
倍数: 1
SMD/SMT TO-263-7 1 Channel 1.2 kV 35 A 77 mOhms - 10 V, + 25 V 4 V 53 nC - 55 C + 175 C 188 W Enhancement
onsemi 碳化硅MOSFET 1200V/16MOSICFETG3TO24 203库存量
¥524.4895
¥416.631
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 1.2 kV 107 A 21 mOhms - 20 V, + 20 V 4 V 218 nC - 55 C + 175 C 517 W Enhancement AEC-Q101 SiC FET
onsemi 碳化硅MOSFET 1200V/70MOSICFETG4TO247-4 388库存量
¥125.4978
¥80.7724
¥67.913
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 1.2 kV 27.5 A 91 mOhms - 20 V, + 20 V 6 V - 55 C + 175 C 217 W SiC FET
ROHM Semiconductor 碳化硅MOSFET TO247 750V 56A N-CH SIC 787库存量
¥171.1385
¥107.7003
最低: 1
倍数: 1
Through Hole TO-247N-3 1 Channel 750 V 56 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 176 W Enhancement
ROHM Semiconductor 碳化硅MOSFET TO247 1.2KV 26A N-CH SIC 499库存量
¥114.7289
¥70.4781
¥68.7379
¥67.574
最低: 1
倍数: 1
Through Hole TO-247N-3 1 Channel 1.2 kV 26 A 81 mOhms - 4 V, + 21 V 4.8 V 64 nC + 175 C 115 W Enhancement

onsemi 碳化硅MOSFET SIC MOS TO247-4L 650V 202库存量
¥237.978
¥167.0818
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 650 V 142 A 18 mOhms - 8 V, + 22 V 4.3 V 283 nC - 55 C + 150 C 500 W Enhancement EliteSiC
ROHM Semiconductor 碳化硅MOSFET 650V 21A 103W SIC 120mOhm TO-247N
450库存量
¥79.0774
¥53.0987
¥49.5505
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 650 V 21 A 156 mOhms - 4 V, + 22 V 5.6 V 38 nC + 175 C 103 W Enhancement AEC-Q101

onsemi 碳化硅MOSFET SIC MOS TO247-4L 80MOHM 1200V 660库存量
¥105.2934
¥58.2289
¥58.1498
¥54.6807
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 1.2 kV 29 A 80 mOhms - 15 V, + 25 V 4.3 V 56 nC - 55 C + 175 C 170 W Enhancement EliteSiC

onsemi 碳化硅MOSFET 20MOHM 900V 328库存量
¥309.2697
¥219.2765
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 900 V 118 A 28 mOhms - 8 V, + 22 V 4.3 V 196 nC - 55 C + 175 C 503 W Enhancement AEC-Q101 EliteSiC
Microchip Technology 碳化硅MOSFET MOSFET SIC 700 V 35 mOhm TO-268 96库存量
¥73.5291
¥67.8226
¥58.9747
¥56.50
最低: 1
倍数: 1
SMD/SMT D3PAK-3 1 Channel 700 V 65 A 44 mOhms - 10 V, + 23 V 1.9 V 99 nC - 55 C + 175 C 206 W Enhancement
ROHM Semiconductor 碳化硅MOSFET Transistor SiC MOSFET 1200V 280mO 2nd Gen TO-247
450库存量
¥135.4079
¥96.3664
¥85.8574
¥81.5634
最低: 1
倍数: 1
Through Hole TO-247N-3 1 Channel 1.2 kV 14 A 364 mOhms - 6 V, + 22 V 4 V 36 nC + 175 C 108 W Enhancement
ROHM Semiconductor 碳化硅MOSFET 650V 30A 134W SIC 80mOhm TO-247N
366库存量
¥157.3299
¥117.4522
¥114.5594
最低: 1
倍数: 1
Through Hole TO-247N-3 1 Channel 650 V 30 A 104 mOhms - 4 V, + 22 V 5.6 V 48 nC + 175 C 134 W Enhancement AEC-Q101
ROHM Semiconductor 碳化硅MOSFET 1200V 31A 165W SIC 80mOhm TO-247N
171库存量
¥216.3046
¥157.7367
最低: 1
倍数: 1
Through Hole TO-247-3 1 Channel 1.2 kV 31 A 80 mOhms - 4 V, + 22 V 2.7 V 60 nC - 55 C + 175 C 165 W Enhancement AEC-Q101
ROHM Semiconductor 碳化硅MOSFET TO247 750V 34A N-CH SIC 311库存量
¥113.8136
¥67.4949
¥65.8451
最低: 1
倍数: 1
Through Hole TO-247-4 1 Channel 750 V 34 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 115 W Enhancement

onsemi 碳化硅MOSFET SIC MOSFET 900V TO247-4L 20MOHM 450库存量
¥313.575
¥223.0846
最低: 1
倍数: 1
TO-247-4 EliteSiC