Through Hole 存储器 IC

结果: 565
选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS 产品类型 安装风格 封装 / 箱体 存储容量 组织 接口类型 最小工作温度 最大工作温度 封装
Analog Devices / Maxim Integrated NVRAM 256k Nonvolatile SRAM

NVRAM Through Hole EDIP-28 256 kbit 32 k x 8 Parallel - 40 C + 85 C Tube
Analog Devices / Maxim Integrated NVRAM 1024k Nonvolatile SRAM

NVRAM Through Hole EDIP-32 1 Mbit 128 k x 8 Parallel 0 C + 70 C Tube
Analog Devices / Maxim Integrated NVRAM 4096k Nonvolatile SRAM

NVRAM Through Hole EDIP-32 4 Mbit 512 k x 8 Parallel 0 C + 70 C Tube
Analog Devices / Maxim Integrated NVRAM 64k Nonvolatile SRAM

NVRAM Through Hole EDIP-28 64 kbit 8 k x 8 Parallel 0 C + 70 C Tube

Microchip Technology 电可擦除可编程只读存储器 150NS CERDIP
交货期 23 周
最低: 1
倍数: 1

EEPROM Through Hole DIP-28 256 kbit 32 k x 8 Parallel - 55 C + 125 C Tube

Microchip Technology 电可擦除可编程只读存储器 200NS CERDIP
无库存交货期 23 周
最低: 14
倍数: 14

EEPROM Through Hole DIP-28 256 kbit 32 k x 8 Parallel - 55 C + 125 C Tube

Microchip Technology 电可擦除可编程只读存储器 250NS CERDIP
无库存交货期 23 周
最低: 14
倍数: 14

EEPROM Through Hole DIP-28 256 kbit 32 k x 8 Parallel - 55 C + 125 C Tube
Microchip Technology 电可擦除可编程只读存储器 256K HI-ENDURANCE SDP- 150NS 883C
无库存交货期 23 周
最低: 14
倍数: 14

EEPROM Through Hole CDIP-28 256 kbit 32 k x 8 Parallel - 55 C + 125 C Tube
Microchip Technology 电可擦除可编程只读存储器 256K 5V SDP - 90NS 883C
无库存交货期 23 周
最低: 14
倍数: 14

EEPROM Through Hole CDIP-28 256 kbit 32 k x 8 Parallel - 55 C + 125 C Tube
Microchip Technology 电可擦除可编程只读存储器 256K HI-ENDURANCE SDP - 200NS
无库存交货期 23 周
最低: 14
倍数: 14

EEPROM Through Hole CDIP-28 256 kbit 32 k x 8 Parallel - 55 C + 125 C Tube
Microchip Technology 电可擦除可编程只读存储器 256K HI-ENDURANCE SDP - 250NS
无库存交货期 23 周
最低: 14
倍数: 14

EEPROM Through Hole CDIP-28 256 kbit 32 k x 8 Parallel - 55 C + 125 C Tube
Microchip Technology 电可擦除可编程只读存储器 256K 5V SDP - 120NS
无库存交货期 23 周
最低: 1
倍数: 1

EEPROM Through Hole CDIP-28 256 kbit 32 k x 8 Parallel - 55 C + 125 C Tube
Microchip Technology 电可擦除可编程只读存储器 256K HI-ENDURANCE SDP - 120NS
无库存交货期 23 周
最低: 14
倍数: 14

EEPROM Through Hole CDIP-28 256 kbit 32 k x 8 Parallel - 55 C + 125 C Tube
Microchip Technology 电可擦除可编程只读存储器 256K HI-ENDURANCE SDP - 90NS
无库存交货期 23 周
最低: 14
倍数: 14

EEPROM Through Hole CDIP-28 256 kbit 32 k x 8 Parallel - 55 C + 125 C Tube
Microchip Technology 电可擦除可编程只读存储器 256K FAST PROG SDP - 120NS
无库存交货期 23 周
最低: 14
倍数: 14

EEPROM Through Hole CDIP-28 256 kbit 32 k x 8 Parallel - 55 C + 125 C Tube
Microchip Technology 电可擦除可编程只读存储器 256K FAST PROG SDP - 90NS
无库存交货期 23 周
最低: 14
倍数: 14

EEPROM Through Hole CDIP-28 256 kbit 32 k x 8 Parallel - 55 C + 125 C Tube

Microchip Technology 电可擦除可编程只读存储器 150NS CERDIP
无库存交货期 23 周
最低: 14
倍数: 14

EEPROM Through Hole DIP-28 256 kbit 32 k x 8 Parallel - 55 C + 125 C Tube

Microchip Technology 电可擦除可编程只读存储器 200NS CERDIP
无库存交货期 23 周
最低: 14
倍数: 14

EEPROM Through Hole DIP-28 256 kbit 32 k x 8 Parallel - 55 C + 125 C Tube

Microchip Technology 电可擦除可编程只读存储器 250NS CERDIP
无库存交货期 23 周
最低: 14
倍数: 14

EEPROM Through Hole DIP-28 256 kbit 32 k x 8 - 55 C + 125 C Tube

Microchip Technology 电可擦除可编程只读存储器 150NS CERDIP
无库存交货期 23 周
最低: 14
倍数: 14

EEPROM Through Hole DIP-28 256 kbit 32 k x 8 Parallel - 55 C + 125 C Tube
Texas Instruments F-RAM 8Kb FRAM with 64-bit unique ID Single W

FRAM Through Hole TO-92-3 8 kbit 1-Wire - 10 C + 85 C Reel
Analog Devices / Maxim Integrated NVRAM 64k Nonvolatile SRAM

NVRAM Through Hole EDIP-28 64 kbit 8 k x 8 Parallel 0 C + 70 C Tube
Analog Devices / Maxim Integrated NVRAM 64k Nonvolatile SRAM

NVRAM Through Hole EDIP-28 64 kbit 8 k x 8 Parallel 0 C + 70 C Tube
Analog Devices / Maxim Integrated NVRAM 256k Nonvolatile SRAM

NVRAM Through Hole EDIP-28 256 kbit 32 k x 8 Parallel - 40 C + 85 C Tube
Analog Devices / Maxim Integrated NVRAM 3.3V 1024k Nonvolatile SRAM

NVRAM Through Hole EDIP-32 1 Mbit 128 k x 8 Parallel 0 C + 70 C Tube