32 dB 无线和射频半导体

无线和射频半导体类型

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选择 图像 零件编号 制造商 描述 数据表 供货情况 单价(含13%增值税) 根据您的数量,按照单价筛选表格中的结果。 数量 RoHS 产品类型 安装风格 封装 / 箱体
Analog Devices 射频前端 Dual Channel, 2.4 GHz to 4.2 GHz Receive

RF Front End SMD/SMT LFCSP-40
Analog Devices 射频前端 Dual Channel, 2.4 GHz to 4.2 GHz Receive

RF Front End SMD/SMT LFCSP-40
Analog Devices 射频前端 Dual Channel, 2.4 GHz to 4.2 GHz Receive

RF Front End SMD/SMT LFCSP-40
Analog Devices 射频放大器 GaN Driver Ampllifier

RF Amplifier SMD/SMT LFCSP-32
Fairview Microwave 射频放大器 WR-22 Waveguide Low Noise Figure Amplifier at 5.5 dB from 33 GHz to 50 GHz Frequency in Q band with 32 dB Gain, Using UG-383/U Flanges
RF Amplifier
Fairview Microwave 射频放大器 2 GHz to 6 GHz, Medium Power Broadband Amplifier with 2 Watt, 32 dB Gain and SMA
RF Amplifier
Fairview Microwave 射频放大器 500 MHz to 10 GHz, Medium Power Broadband Amplifier with 25 dBm, 32 dB Gain and SMA
RF Amplifier
Qorvo 射频放大器 8.5 - 11 GHz, 4 W GaN PA
RF Amplifier SMD/SMT QFN-21
Qorvo 射频前端 2GHz Wi-Fi 6 Front End Module

RF Front End SMD/SMT LGA-24
Qorvo 射频前端 5GHz Wi-Fi 7 High Power Front End Module
RF Front End SMD/SMT
Qorvo 射频前端 6GHz Wi-Fi 7 High Power nonlinear Front
RF Front End SMD/SMT
Ampleon 射频金属氧化物半导体场效应(RF MOSFET)晶体管 B10G1819N10DL/LGA-7X7-20/REEL

RF MOSFETs SMD/SMT LGA-20
Ampleon 射频金属氧化物半导体场效应(RF MOSFET)晶体管 B10G1819N10DL/LGA-7X7-20/REEL

RF MOSFETs SMD/SMT LGA-20
Ampleon 射频金属氧化物半导体场效应(RF MOSFET)晶体管 B11G1822N60D/PQFN-12x7/REELDP

RF MOSFETs SMD/SMT QFN-36
Ampleon 射频金属氧化物半导体场效应(RF MOSFET)晶体管 B11G1822N60D/PQFN-12x7/REELDP

RF MOSFETs SMD/SMT QFN-36